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Composite material, preparation method thereof and quantum dot light-emitting diode

A composite material, polar technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unsatisfactory hole transport performance of organic semiconductor materials

Pending Publication Date: 2021-12-17
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] An object of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a composite material and a preparation method thereof, aiming at solving the technical problem of unsatisfactory hole transport properties of organic semiconductor materials

Method used

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  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0032] On the other hand, the embodiment of the present invention also provides a method for preparing a composite material, such as figure 1 Shown, this preparation method comprises the steps:

[0033] S01: Provide an organic semiconductor material and an organic substance with a polyphenylene ring structure, wherein the polyphenylene ring structure of the organic substance is connected with a polar functional group;

[0034] S02: dissolving the organic semiconductor material and organic matter in a non-polar solvent to obtain a mixed solution;

[0035] S03: performing solid-liquid separation on the mixed solution to obtain the composite material.

[0036]The preparation method of the composite material provided by the embodiment of the present invention is obtained by dissolving the organic semiconductor material and the organic substance having a polyphenyl ring structure in a polar solvent and then performing solid-liquid separation. The composite material obtained by th...

Embodiment 1

[0070] This embodiment provides a QLED device, its structure is as follows figure 2 As shown, the QLED device includes a substrate 1 , an anode 2 , a hole injection layer 3 , a hole transport layer 4 , a quantum dot light-emitting layer 5 , an electron transport layer 6 , and a cathode 7 sequentially from bottom to top. Among them, the material of the substrate 1 is a glass sheet, the material of the anode 2 is an ITO substrate, the material of the hole injection layer 3 is PEDOT:PSS, and the material of the hole transport layer 4 is terphenyl-4-carboxylic acid doped TFB. Composite material, the quantum dot light-emitting layer 5 is made of CdZnSe / ZnSe quantum dots, the electron transport layer 6 is made of ZnO, and the material of the cathode 7 is Al.

[0071] The preparation method of the device comprises the following steps:

[0072] 1. At room temperature, add a certain amount of terphenyl-4-carboxylic acid to the TFB material solution dissolved in chloroform. The mass ...

Embodiment 2

[0077] This embodiment provides a QLED device, its structure is as follows figure 2 As shown, the QLED device includes a substrate 1 , an anode 2 , a hole injection layer 3 , a hole transport layer 4 , a quantum dot light-emitting layer 5 , an electron transport layer 6 , and a cathode 7 sequentially from bottom to top. Among them, the material of the substrate 1 is a glass sheet, the material of the anode 2 is an ITO substrate, the material of the hole injection layer 3 is PEDOT:PSS, and the material of the hole transport layer 4 is 4-(1,2,2-triphenyl Vinyl) benzoic acid-doped composite material of TFB, the material of the quantum dot light-emitting layer 5 is CdZnSe / ZnSe / ZnS quantum dots, the material of the electron transport layer 6 is ZnO, and the material of the cathode 7 is Al.

[0078] The preparation method of the device comprises the following steps:

[0079] 1. At room temperature, add a certain amount of 4-(1,2,2-triphenylethenyl)benzoic acid to the TFB material ...

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Abstract

The invention belongs to the technical field of light-emitting device materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises an organic semiconductor material and an organic matter which is dispersed in the organic semiconductor material and has a multi-benzene-ring structure, and the multi-benzene-ring structure of the organic matter is connected with a polar functional group. According to the composite material, the organic semiconductor material is modified by using the organic matter with the multi-benzene-ring structure, so that the problems that the hole injection barrier of the surface of the quantum dot and the hole injection barrier of the organic semiconductor material are too large, the hole mobility is low, charge accumulation easily occurs on a QD / HTL interface and device charges are unbalanced are effectively solved, the service life of the device can be prolonged, and the efficiency of the device can be improved.

Description

technical field [0001] The invention belongs to the technical field of light-emitting device materials, and in particular relates to a composite material, a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Quantum dots (QD), also known as semiconductor nanocrystals, are usually composed of II-VI or III-V elements, and their particle size is smaller than or close to the exciton Bohr radius. At present, significant breakthroughs have been made in the development of quantum dot synthesis technology. Among them, the research on II-VI quantum dots represented by CdSe is becoming more and more perfect. The device efficiency and device lifetime of green quantum dots are close to the requirements of commercial applications. Since all high-quality quantum dots are synthesized by a full solution method, they are very suitable for preparing films by solution processing methods such as spin coating and printing. Therefore, the quantum d...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/111H10K85/141H10K85/151H10K85/615H10K85/631H10K85/636H10K85/633H10K50/115H10K50/15
Inventor 聂志文张旋宇刘文勇
Owner TCL CORPORATION