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Silicon carbide-based AlScN template for high-frequency high-performance SAW device and preparation method of silicon carbide-based AlScN template

A silicon carbide-based, high-performance technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to solve problems such as large surface roughness, abnormal nucleation, and low temperature stability

Pending Publication Date: 2021-12-31
ULTRATREND TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on the current technical problems of the above-mentioned Sc-doped AlN template, the present invention intends to provide a multi-layer structure, a silicon carbide-based AlScN template structure and its preparation method, to solve the problem of material phase velocity after AlN is doped with high Sc concentration. Sharp decrease and abnormal nucleation, large surface roughness, low temperature stability and other problems

Method used

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  • Silicon carbide-based AlScN template for high-frequency high-performance SAW device and preparation method of silicon carbide-based AlScN template
  • Silicon carbide-based AlScN template for high-frequency high-performance SAW device and preparation method of silicon carbide-based AlScN template
  • Silicon carbide-based AlScN template for high-frequency high-performance SAW device and preparation method of silicon carbide-based AlScN template

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Embodiment 1

[0028] A silicon carbide-based AlScN template structure and preparation method for high-frequency high-performance SAW devices, mainly including: preparation of silicon carbide substrate 1 (S1), substrate surface pretreatment (S2), growth of SiO 2 Layer 2 (S3), growing Al layer 3 (S4), growing AlN seed layer 4 (S5), growing Al 1-x sc x N low Sc concentration layer 5 (S6), Al growth 1-x sc x N high Sc concentration layer 6 (S7). like figure 1 , 2 As shown, they are a schematic diagram of the preparation process of the silicon carbide-based AlScN template and a schematic diagram of the preparation process of the silicon carbide-based AlScN template in this embodiment, respectively. Next, the structure and preparation method of the silicon carbide-based AlScN template of this embodiment will be described in detail with reference to the accompanying drawings.

[0029]1) Prepare SiC substrate 1 (S1). Silicon carbide substrate 1 has a crystal orientation of (0001), a crystal ...

Embodiment 2

[0037] still, such as figure 1 , 2 , the structure and preparation method of the silicon carbide-based AlScN template of this embodiment will be described in detail with reference to the accompanying drawings.

[0038] 1) Prepare SiC substrate material 1 (S1). The silicon carbide substrate 1 is a polished substrate of standard specifications. The surface is an RCA-cleaned EPI-ready polished surface with a roughness of less than 0.3 nm, and the back surface is a grinding grade with a roughness of 1±0.2 μm.

[0039] 2) The surface of the substrate 1 is pretreated (S2). The pretreatment conditions are as follows: the radio frequency power is 20W, the argon gas flow range is 300sccm, and the duration is 60s. The use of pretreatment technology can remove oxide impurities on the surface of the substrate material, accumulate bombardment energy, and enhance the activity and migration ability of adatoms.

[0040] 3) Growth of SiO 2 Layer 2 (S3). Preparation of 100nm SiO 2 layer,...

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Abstract

The invention discloses a silicon carbide-based AlScN template for a high-frequency and high-performance SAW device. The silicon carbide-based AlScN template is of a multi-layer structure, monocrystalline silicon carbide is used as a substrate, and a SiO2 layer, a metal passivation layer, an AlN seed layer, a low-concentration Sc-doped AlScN layer and a high-concentration Sc-doped AlScN layer are sequentially grown on a polished surface of the silicon carbide. By adopting the preparation method disclosed by the invention, the AlScN film with high crystal quality, high phase velocity, low surface roughness, high temperature stability and high Sc concentration can be prepared. The silicon carbide substrate provides higher phase velocity; the SiO2 layer makes up the defect of poor temperature stability of the AlScN film with high Sc concentration; the AlN seed layer is small in lattice mismatch with AlScN, so that the crystallization quality is improved; the AlScN layer with the low Sc concentration prevents the Sc element from being separated out in advance, and lattice mismatch is reduced; and the AlScN layer with high Sc concentration provides good piezoelectric property. The multilayer structure can be better applied to bulk acoustic wave and surface acoustic wave devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to an aluminum scandium nitrogen template structure and a preparation method thereof. Background technique [0002] With the development of 5G communication technology, the addition of 5G frequency bands, the increase in the number of original frequency bands, and the in-depth application of MIMO and CA technologies, the demand for filters is increasing, and the requirements for the preparation of RF front-ends are also increasing. Therefore, it is necessary to press Materials with higher electrical properties are used to prepare filter devices SAW / BAW. [0003] The core of preparing high-performance RF filters lies in the characteristics of the filter substrate piezoelectric material and its crystalline quality. Compared with traditional ZnO, PZT, LT / LN and other piezoelectric materials, AlN thin film materials have excellent physical properties such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/203H01L21/205
CPCH01L21/02378H01L21/02505H01L21/0254H01L21/02658H01L21/02631H01L21/0262
Inventor 吴亮付丹扬王琦琨龚建超
Owner ULTRATREND TECH INC
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