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Preparation method of GaAs-based high-power semiconductor laser cavity surface passivation film based on AlxNy

A semiconductor and laser technology, applied in the field of high-power semiconductor laser cavity surface passivation, can solve the problems of large absorption of light in the near-infrared band, easy deliquescence, etc., to achieve enhanced passivation effect, good passivation characteristics, and avoid the introduction of impurities. Effect

Pending Publication Date: 2021-12-31
YANGZHOU POLYTECHNIC INST
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Problems solved by technology

[0006] In order to further improve the performance of semiconductor lasers and protect the cavity surface, solve the problems of large near-infrared light absorption and deliquescence in traditional passivation deposition layers

Method used

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  • Preparation method of GaAs-based high-power semiconductor laser cavity surface passivation film based on AlxNy
  • Preparation method of GaAs-based high-power semiconductor laser cavity surface passivation film based on AlxNy
  • Preparation method of GaAs-based high-power semiconductor laser cavity surface passivation film based on AlxNy

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Embodiment 1

[0020] The present invention employs reaction magnetron sputtering techniques, using high pure aluminum (99.99%) target and high purity nitrogen and argon mixed gas plated in GaAS-based laser cavity surface x N y film. The process is to use acetate ratio of the semiconductor laser before 1: 1, acetone, ethanol mixed solution, ultrasonically; Ultrasound cleaning, the semiconductor laser cavity is removed, and the deionized water (Di) is rinsed, After cleaning, the semiconductor laser is placed in a magnetron sputter system vacuum chamber, and the laser is blown away by nitrogen; in order to minimize the residual oxygen content in the cavity, the magnetron sputtering system is required to be a vacuum cavity. It is repeated multiple times of inflation and deflation of nitrogen, and the glow-discharged nitrogen plasma in the magnetron sputtering system is used as the cleaning source, and the laser is cleaned for nitrogen plasma; in order to further improve the semiconductor laser perf...

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Abstract

The invention discloses a preparation method of a GaAs-based high-power semiconductor laser cavity surface passivation film based on AlxNy, a semiconductor laser is plated with a layer of aluminum nitride film, and the working conditions are as follows: the working air pressure is 0.35 Pa, the nitrogen partial pressure is 60%, the sputtering power is 200W, and the deposition rate is 0.044 nm / s. According to the invention, an aluminum nitride material is adopted to plate the laser cavity surface passivation film, and the laser cavity surface passivation film has good passivation characteristics, excellent optical characteristics, good thermal stability and low light absorptivity.

Description

Technical field [0001] The present invention relates to a based on Al x N y The preparation method of GaAs-based high power semiconductor laser cavity diaphragm diaphragm, belongs to the field passivation technology of high power semiconductor laser cavity. Background technique [0002] High-power semiconductor lasers are widely used in communication, medical, high precision processing, and military. High output power and long-term stable reliability are prerequisites for high power semiconductor lasers to be widely used, while Catastrophic Optical Degradation, CODs have restricted the maximum output power and reliability of the semiconductor laser. [0003] During the preparation of the semiconductor laser, the coating treatment is carried out on the laser cavity surface, i.e., plating a diaphragm film in the front chamber surface, and plating high-reverse membranes, and can further increase the performance of GaAs-based high power semiconductor lasers and protect blunt. Treated...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028C23C14/00C23C14/06C23C14/35
CPCH01S5/0282C23C14/35C23C14/0617C23C14/0036
Inventor 郭林炀马晓辉杨润贤陶涛郭胜君李丹蒋煜琪钟志超
Owner YANGZHOU POLYTECHNIC INST
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