Horizontal super-oriented carbon nanotube bundle array and soft lock laddering preparation method thereof

Abstract

The invention discloses a horizontal super-oriented carbon nanotube bundle array and a soft lock laddering preparation method thereof. The method comprises the following steps of: transferring a single-walled carbon nanotube network film onto a target substrate, wetting a soft film with a volatile solvent, wrapping a rigid orientation device with the wetted soft film, contacting the soft film with the single-walled carbon nanotube network film, applying external force to the rigid orientation device to enable the rigid orientation device to tightly press the single-walled carbon nanotube network film, and moving the rigid orientation device along a target direction to enable single-walled carbon nanotubes to be drawn out from the network film in a stretching manner to obtain the single-walled carbon nanotube network film, thus forming an oriented carbon nanotube bundle array on the target substrate. According to the preparation method, no surfactant is used, no damage is caused to the carbon nanotubes, the effect of removing surface pollution on the carbon nanotubes is achieved after orientation, and the prepared carbon nanotube bundle array is tightly and directionally arranged, has high orientation accuracy, high stacking density and high current bearing capacity and can be applied to the fields of nano electronic devices and the like.

Description

technical field [0001] The invention relates to the field of nanoelectronic devices, in particular to a horizontal super-oriented carbon nanotube bundle array and a method for preparing the same by soft-lock wire drawing. Background technique [0002] In a field effect transistor, a single semiconducting carbon nanotube can be used as a channel material of a transistor, and a single metallic carbon nanotube can be used as a gate electrode, so the application of carbon nanotubes in a field effect transistor has the potential to promote the miniaturization of transistors , far superior to the channel and gate lengths in state-of-the-art commercial transistors. The van der Waals interactions between parallel nanotubes contribute to the formation of carbon nanotube bundles with high packing density and low electrical resistance. Compared with traditional metals, metallic carbon nanotube bundles are ideal candidates for next-generation microelectronic wires. [0003] At present...

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Problems solved by technology

Although these methods can effectively transform the randomly oriented carbon nanotube network into relatively aligned carbon nanotube arrays, impurities (such as surfactants) and defects are easily introduced during the orientation process, and the available carbon nanotubes are relatively long. Short (generally<10μm, aspect ratio<5000), these all increase the difficulty of obtaining high-density, clean, large aspect ratio, and excellent electrical properties of carbon nanotube bundle arrays

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