The invention relates to the technical field of
semiconductor processing, and provides a directional
cutting method and equipment for a
single crystal ingot. The method comprises the steps that an X-
ray transmitting tube and an X-
ray receiver on an orientation
assembly are adjusted according to a reference
wafer of a standard
crystal orientation, the adjusted orientation
assembly is obtained, and according to the adjusted orientation
assembly, the
horizontal angle and the
vertical angle of a to-be-
cut crystal ingot are adjusted through a
crystal loading platform so that the tangent plane of the to-be-
cut crystal
ingot can be matched with the
cutting plane; the adjusted to-be-
cut crystal ingot is cut, a cut
wafer is obtained, the
crystal orientation of the cut
wafer is measured, the angle deviation between the horizontal direction and the vertical direction of the cut wafer is obtained, and the compensation value of the
cutting equipment is calculated based on the angle deviation; the compensation value is used for conducting angle compensation on the crystal loading platform
deck, a new to-be-cut crystal ingot is cut, a wafer conforming to the target
crystal orientation is obtained, and the cutting equipment comprises an orientation assembly and the crystal loading platform
deck. The problem that in the prior art, the wafer cutting precision is not high enough is solved.