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Preparation method of high-purity nitric oxide and application of high-purity nitric oxide in semiconductor manufacturing process

A nitric oxide and semiconductor technology, applied in the field of high-purity nitric oxide preparation, can solve the problems of being susceptible to shock or explosion, and adversely affected by the purity of nitric oxide, and achieve the effects of reducing disproportionation, prolonging residence time, and improving purity

Active Publication Date: 2022-02-08
宿州伊维特新材料有限公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent 200680030113.X discloses a nitrogen oxide refining method and a nitrogen oxide refining device, which adopts a low-temperature rectification process to prepare high-purity nitrogen monoxide gas, which will generate condensed nitrogen oxide accumulation, which is vulnerable to shock or explosion. There is a big security risk
Patent CN201210439006.X discloses a method for purifying nitric oxide gas with 4N purity, including mixing reaction of dilute sulfuric acid and sodium nitrite, absorbing lye, gas-liquid separation, drying and separating to obtain gas, and then passing polyethylene glycol dimethyl Based on acrylate adsorption area, this patent adopts the adsorption method to purify nitric oxide gas, although it can solve the safety hazard caused by low temperature distillation, but when using lye to absorb CO 2 , SO 2 and NO 2 In the process of removing impurities, nitric oxide is prone to disproportionation after contact with lye, producing nitrogen dioxide and nitrous oxide, which adversely affects the purity of nitric oxide

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  • Preparation method of high-purity nitric oxide and application of high-purity nitric oxide in semiconductor manufacturing process
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  • Preparation method of high-purity nitric oxide and application of high-purity nitric oxide in semiconductor manufacturing process

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preparation example Construction

[0041] A preparation method of high-purity nitric oxide, comprising the following steps:

[0042] (1) Feed nitrogen monoxide feed gas from FeSO at a flow rate of 0.5~5kg / h 4 The lower part of the adsorption tower is attached to FeSO 4 The inner wall of the adsorption tower is obliquely upward into FeSO 4 In the adsorption tower, in FeSO 4 An upward vortex is formed in the adsorption tower; the FeSO 4 The solution passes through the FeSO 4 The spiral spray pipe in the upper part of the adsorption tower is sprayed into FeSO from one or more spiral nozzles 4 In the adsorption tower; the FeSO 4 The adsorption tower is equipped with a gradient magnetic field whose magnetic field strength increases from top to bottom and the direction of the magnetic field is downward. FeSO 4 When the solution flows along the spiral spray pipe and after being sprayed out by the spiral nozzle, the magnetic induction line is cut; the control of FeSO 4 The pressure in the adsorption tower is con...

Embodiment 1

[0046] A preparation method of high-purity nitric oxide, comprising the following steps:

[0047] (1) Feed the nitrogen monoxide feed gas into the feed gas inlet pipe at a flow rate of 1.4±0.2kg / h, and feed FeSO with a concentration of 3mol / L 4 The solution is passed into FeSO from the spiral spray pipe 4 In the adsorption tower, control FeSO 4 The temperature in the adsorption tower is 20±2°C and the pressure is 19±1psi, so that the nitric oxide feed gas and FeSO 4 solution in FeSO 4 The adsorption tower contacts with each other and a complexation reaction occurs, and the obtained adsorption liquid is discharged from the bottom of the tower without being absorbed by FeSO 4 The gas absorbed by the solution is discharged from the top of the tower;

[0048] (2) Pass the adsorption liquid into the heat exchanger, raise the temperature to 90±2°C, pass it into the NO desorption tower for desorption, and pass the desorbed gas into the cryogenic condenser from the top of the NO d...

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Abstract

The invention relates to the technical field of nitric oxide gas purification, and discloses a preparation method of high-purity nitric oxide and application of the high-purity nitric oxide in a semiconductor manufacturing process. The preparation method comprises the following steps: introducing nitric oxide raw material gas into a FeSO4 adsorption tower from the lower part, forming an upward vortex in the tower, spraying a FeSO4 solution into the FeSO4 adsorption tower from a spiral nozzle through a spiral spraying pipe, and arranging a gradient magnetic field of which the magnetic field intensity is gradually increased from top to bottom in the FeSO4 adsorption tower to obtain adsorption liquid; after the adsorption liquid is heated, introducing the adsorption liquid into an NO desorption tower for desorption, and introducing desorbed gas into a cryogenic condenser from the top of the tower and then into a silica gel adsorption tower for silica gel adsorption treatment. According to the invention, the FeSO4 adsorption tower with a special structure is adopted to absorb NO in the raw material gas, so that disproportionation of NO can be reduced, the FeSO4 solution is promoted to separate NO from the raw material gas, and high-purity nitric oxide with higher purity can be obtained.

Description

technical field [0001] The invention relates to the technical field of nitric oxide gas purification, in particular to a method for preparing high-purity nitric oxide and its application in semiconductor manufacturing process. Background technique [0002] Nitric oxide has been widely used in the fields of medicine, scientific research, environmental protection, fine chemical industry, and electronics. At present, the purity level of nitric oxide in China is mostly kept within 99.0%, and it contains a large amount of NO 2 , N 2 Such impurities cannot meet the requirements of scientific research, semiconductor manufacturing and other industries for the purity of nitric oxide, especially the semiconductor manufacturing industry requires nitric oxide purity of more than 3.5N. The improvement of nitric oxide purity is conducive to reducing impurity pollution in semiconductor manufacturing. The improvement of semiconductor performance is of great significance. [0003] In the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/24B01D53/04B01D53/56B01D53/78B01D53/96
CPCC01B21/24B01D53/78B01D53/56B01D53/96B01D53/04C01B2210/0007C01B2210/0062C01B2210/0015C01B2210/0046C01B2210/0075
Inventor 甘华平秦远望王战思李涛
Owner 宿州伊维特新材料有限公司
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