High-resistance resistor magnetron sputtering target material and preparation method thereof

Abstract

The invention discloses a high-resistance resistor magnetron sputtering target material and a preparation method thereof. The preparation method comprises the steps of (1) conducting burdening, specifically, burdening according to the following components: 50-57 wt% of Si, 40-42 wt% of Cr and the balance of Ni; (2) placing the graphite and magnesium oxide composite crucible in vacuum induction melting for preheating with the preheating temperature being 850 DEG C, and then putting Cr and Ni into the graphite and magnesium oxide composite crucible for further heating to 1400 DEG C; (3) preheating Si to 850 DEG C, preserving heat for 2.5-4 hours, continuously putting the Si into the graphite magnesium oxide composite crucible, and continuously heating to 2100 DEG C until the Si is completely mixed and melted; (4) reducing the temperature to 1800 DEG C to 1850 DEG C; (5) conducting casting, cooling and molding; (6) conducting machining, specifically, machining the surface of the high-resistance resistor magnetron sputtering target blank to enable the surface to be flat and smooth; and (7) welding to form a finished product of the high-resistance resistor magnetron sputtering target material. The preparation method has the advantages of high resistivity, low resistivity temperature coefficient and the like.

Description

technical field [0001] The invention belongs to the field of material science, and specifically refers to a magnetron sputtering target, especially a high-resistance magnetron sputtering target used for a resistance coating machine and a preparation method thereof. Background technique [0002] At present, the development and production of precision high-resistance metal film resistors, high-frequency resistors, and high-temperature resistors has always been a major problem at home and abroad. The key is that the film material and production process are difficult to solve. Film materials are usually divided into powder materials, wire materials, foil materials and plates. The performance of the resistor mainly depends on the performance of the film material and the film forming process. Magnetron sputtering technology has long been widely used in the production of resistance film, and it has shown great advantages in temperature coefficient of resistivity, resistance stabil...

AI Technical Summary

Problems solved by technology

However, due to the target used in sputtering, it is currently difficult to make the initial resistance value very high. Generally, the initial resistance value can reach up to about 10KΩ. It is very difficult to produce high-resistance metal films. Membrane Resistance Requirements

[0003] At present, the high-resistance films produced at home and abroad can be divided into metal films, synthetic films, organic solid core resistors and glass glazes from the perspective of materials. The resistance value can be made very high, but the temperature coefficient and voltage coefficient are large, and the stability of moisture resistance is poor, so it is often packaged in a glass shell, and the volume is large.

Although the volume of the solid core can be made small, the voltage coefficient and current noise are not ideal; while the metal film can obtain a small temperature coefficient, current noise and voltage coefficient, and the volume can also be made small, but the metal film resistor It is difficult to make it very high. In addition to process reasons, it is mainly determined by the resistivity of the membrane material and the temperature coefficient of resistivity. Therefore, increasing the resistivity of the membrane material and reducing the temperature coefficient of the resistivity of the membrane material become the key

Images