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Light-emitting device and manufacturing method thereof

A technology of light-emitting devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as large contact resistance, QLED device efficiency and life roll-off, and reduce contact resistance and improve stability sex, efficiency-enhancing effect

Active Publication Date: 2022-02-11
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]In the process of preparing QLED devices by solution method, hole transport layer materials such as TFB (1,2,4,5-tetrakis(trifluoromethyl)benzene) , PVK (polyvinyl carbazole), styrene, NiO (nickel oxide), MoO3 (molybdenum trioxide), etc., are easily dissolved by the solvent of the quantum dot light-emitting layer, and the hole transport layer The contact resistance with the quantum dot light-emitting layer is large, making it easy for carriers to recombine at the interface between the hole transport layer and the quantum dot light-emitting layer, which leads to a roll-off of the efficiency and life of the QLED device

Method used

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  • Light-emitting device and manufacturing method thereof
  • Light-emitting device and manufacturing method thereof
  • Light-emitting device and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0095] This embodiment provides a light emitting device and a manufacturing method thereof.

[0096] The structure of the light emitting device is:

[0097] ITO / Ag / ITO / PEDOT / TFB / carbon quantum dot interface layer / red quantum dot light-emitting layer / zinc oxide / silver / encapsulation layer.

[0098] A method for manufacturing a light emitting device includes the following steps:

[0099] (1) A substrate with an ITO (15nm) / Ag (140nm) / ITO (15nm) electrode is used, and the substrate is cleaned and dried according to a standard method.

[0100] (2) Deposit PEDOT on the substrate by inkjet printing method, and dry to obtain a hole injection layer with a thickness of 20nm;

[0101] (3) Deposit TFB on the hole injection layer obtained in step (2) by inkjet printing, and dry to obtain a hole transport layer with a thickness of 30 nm.

[0102] (4) Print a layer of KOH solution on the hole transport layer obtained in step (3) by using an inkjet printing method, and soak the hole transpo...

Embodiment 2

[0108] This embodiment provides a light emitting device and a manufacturing method thereof.

[0109] The structure of the light emitting device is:

[0110] ITO / PEDOT / TFB / carbon nanotube interface layer / blue quantum dot light-emitting layer / zinc oxide / silver / encapsulation layer.

[0111] A method for manufacturing a light emitting device includes the following steps:

[0112] (1) A substrate with an ITO (50nm) electrode is used, and the substrate is cleaned and dried according to a standard method.

[0113] (2) Deposit PEDOT on the substrate by inkjet printing method, and dry to obtain a hole injection layer with a thickness of 20nm;

[0114] (3) Deposit TFB on the hole injection layer obtained in step (2) by inkjet printing, and dry to obtain a hole transport layer with a thickness of 30 nm.

[0115] (4) Print a layer of KOH solution on the hole transport layer obtained in step (3) by using an inkjet printing method, and soak the hole transport layer in the KOH solution fo...

Embodiment 3

[0121] This embodiment provides a light emitting device and a manufacturing method thereof.

[0122] The structure of the light emitting device is:

[0123] ITO / Ag / ITO / PEDOT / TFB / carbon fiber interface layer / red quantum dot light-emitting layer / zinc oxide / silver / encapsulation layer.

[0124] A method for manufacturing a light emitting device includes the following steps:

[0125] (1) Using ITO(15nm) / Ag(140nm) / ITO(15nm) electrodes, clean the ITO / Ag / ITO substrate according to the standard method, and dry it.

[0126] (2) Deposit PEDOT on the substrate by inkjet printing method, and dry to obtain a hole injection layer with a thickness of 20nm;

[0127] (3) Deposit TFB on the hole injection layer obtained in step (2) by inkjet printing, and dry to obtain a hole transport layer with a thickness of 30 nm.

[0128] (4) Print a layer of KOH solution on the hole transport layer obtained in step (3) by using an inkjet printing method, and soak the hole transport layer in the KOH solu...

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Abstract

The invention relates to a light-emitting device and a manufacturing method thereof. The light-emitting device comprises a first electrode, a hole transport layer, an interface layer, a quantum dot light-emitting layer and a second electrode; the hole transport layer is arranged on the first electrode, the interface layer is arranged on the hole transport layer and comprises a carbon material, the quantum dot light-emitting layer is arranged on the interface layer, and the second electrode is arranged on the quantum dot light-emitting layer. The existence of the interface layer can prevent a solvent in a quantum dot solution from dissolving a hole transport layer material, and the good conductivity of the interface layer reduces the contact resistance between the hole transport layer and the quantum dot light-emitting layer, promotes the injection and transmission of holes, and enables the holes and electrons to be better compounded in the quantum dot light-emitting layer, so the efficiency of the light-emitting device is improved. In addition, the interface layer can block accumulation of excessive electrons between the hole transport layer and the quantum dot light-emitting layer, inhibit damage of part of leaked electrons to the hole transport layer, improve the stability of the hole transport layer and prolong the service life of the device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light emitting device and a manufacturing method thereof. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs), which use semiconductor quantum dot materials as the light-emitting layer, have attracted extensive attention. Semiconductor quantum dot materials have the advantages of high color purity, high luminous efficiency, adjustable luminous color, and stable devices, making quantum dot light-emitting diodes have broad application prospects in flat panel displays, solid-state lighting and other fields. [0003] In the process of preparing QLED devices by solution method, hole transport layer materials such as TFB (1,2,4,5-tetrakis(trifluoromethyl)benzene), PVK (polyvinylcarbazole), styrene, NiO( nickel oxide), MoO 3 (Molybdenum trioxide), etc., are easily dissolved by the solvent of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/135H10K50/156H10K50/18
Inventor 朱佩
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD