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Silicon-boron master alloy for sputtering target material and preparation method of silicon-boron master alloy

A sputtering target and master alloy technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc. problems such as poor stability, to achieve the effect of improving market competitiveness, reducing energy consumption, and being easy to dope

Active Publication Date: 2022-02-15
DALIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the unfavorable control of the doping amount of boron powder in the ingot casting process, the resistivity stability is poor; the method of doping boron alloy will introduce metal impurities while doping boron, resulting in silicon ingots being effective. Reduced utilization

Method used

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  • Silicon-boron master alloy for sputtering target material and preparation method of silicon-boron master alloy
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  • Silicon-boron master alloy for sputtering target material and preparation method of silicon-boron master alloy

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Embodiment 1

[0077] The traditional preparation process uses boron alloy for doping, which will introduce other metal impurities while controlling the target resistivity, reducing the yield of polysilicon targets. At the same time, the introduction of metal elements will affect the resistivity distribution of the polysilicon ingot and reduce the quality of the target. In view of the problems existing in the traditional preparation process, such as figure 1 As shown, the invention provides a method for preparing a silicon-boron master alloy for a sputtering target, comprising the steps of:

[0078] 1. Take 15g each of high-purity silicon powder and high-purity boron powder of the same quality.

[0079] 2. Add silicon powder and boron powder into the ball mill tank of the star ball mill at the same time, and the mass ratio of the total powder mass added to the ball (the ball refers to the steel ball in the ball mill tank, used to crush the powder) is generally 1 :10~1:100. Then add alcoho...

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Abstract

The invention provides a silicon-boron master alloy for a sputtering target material and a preparation method of the silicon-boron master alloy, wherein the silicon-boron master alloy is a product prepared by adopting high-purity silica powder and high-purity boron powder as raw materials, sequentially performing high-energy ball milling and granulation, and then adopting a powder metallurgy pressing forming technology and vacuum sintering. The silicon-boron master alloy prepared by the method has the characteristics of high boron content, uniform particle distribution, low impurity content, high powder activity, easiness in doping and the like, and compared with a prepared silicon target, the polycrystalline silicon target prepared by doping the silicon-boron master alloy has the characteristics of high product yield, uniform resistivity distribution and the like.

Description

technical field [0001] The invention relates to the technical field of sputtering silicon target preparation, in particular to a silicon-boron master alloy for sputtering targets and a preparation method thereof. Background technique [0002] As a key sputtering coating material, polysilicon targets are widely used in optics, electronics and other fields. At present, polysilicon targets are classified into high resistivity (resistivity>0.5Ω·cm) targets and low resistivity targets in terms of resistivity. Ratio target (resistivity <0.002Ω·cm). A certain amount of boron needs to be added to adjust the resistivity during the preparation of the polysilicon target. The outer layer of the B atom has only 3 valence electrons. It is only one atom short of the original 4 covalent bonds to replace the silicon. Therefore, it is necessary to be adjacent to the silicon The valence electron of the atom jumps over to fill it, leaving a hole at the same time. This hole can carry cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/622C23C14/34
CPCC04B35/58085C04B35/5805C04B35/622C23C14/3414C04B2235/428C04B2235/421
Inventor 李鹏廷李兴烨谭毅姜大川胡志强
Owner DALIAN UNIV OF TECH