Chip resistor paste with high resistance value concentration ratio and preparation method thereof
A resistance paste, chip technology, used in resistance manufacturing, conductive materials dispersed in non-conductive inorganic materials, resistors, etc., can solve problems such as easy agglomeration
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Embodiment 1
[0088] Step 1: Mix 16g of lead ruthenate, 41g of glass powder, 1.5g of niobium pentoxide, and 1.5g of titanium dioxide, and use microwave plasma technology to modify the surface. The setting conditions are: power 150W, pressure 1.8kPa, temperature 110°C, Time 20min, argon-oxygen combination gas (where oxygen is 10% of the flow rate of argon);
[0089] The second step: add the powder of the first step to 40g organic carrier, stir evenly with a glass rod and leave it for more than 1 hour to complete the infiltration;
[0090] Step 3: rolling with a three-roll machine to make the fineness≦5μm to obtain a slurry.
[0091] The slurry is screen printed, leveled, dried at 150°C for 10 minutes, and sintered by mesh belt sintering according to the resistance sintering curve with a peak temperature of 850°C, a duration of 10 minutes, a heating time of 25 minutes, and a cooling time of 35 minutes to obtain a chip resistor .
Embodiment 2
[0093] Step 1: Mix 16g of lead ruthenate, 41g of glass powder, 1.5g of niobium pentoxide, and 1.5g of titanium dioxide, and use microwave plasma technology to modify the surface. The setting conditions are: power 150W, pressure 1.8kPa, temperature 110°C, Time 20min, argon-oxygen combination gas (where oxygen is 15% of the flow rate of argon);
[0094] The second step: add the powder of the first step to 40g organic carrier, stir evenly with a glass rod and leave it for more than 1 hour to complete the infiltration;
[0095] Step 3: rolling with a three-roll machine to make the fineness≦5μm to obtain a slurry.
[0096] The slurry is screen printed, leveled, dried at 150°C for 10 minutes, and sintered by mesh belt sintering according to the resistance sintering curve with a peak temperature of 850°C, a duration of 10 minutes, a heating time of 25 minutes, and a cooling time of 35 minutes to obtain a chip resistor .
Embodiment 3
[0098] Step 1: Mix 16g of lead ruthenate, 41g of glass powder, 1.5g of niobium pentoxide, and 1.5g of titanium dioxide, and use microwave plasma technology to modify the surface. The setting conditions are: power 150W, pressure 1.8kPa, temperature 110°C, Time 20min, argon-oxygen combination gas (where oxygen is 20% of the flow rate of argon);
[0099] The second step: add the powder of the first step to 40g organic carrier, stir evenly with a glass rod and leave it for more than 1 hour to complete the infiltration;
[0100] Step 3: rolling with a three-roll machine to make the fineness≦5μm to obtain a slurry.
[0101] The slurry is screen printed, leveled, dried at 150°C for 10 minutes, and sintered by mesh belt sintering according to the resistance sintering curve with a peak temperature of 850°C, a duration of 10 minutes, a heating time of 25 minutes, and a cooling time of 35 minutes to obtain a chip resistor .
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Abstract
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