Diode type photoelectric sensor and preparation method thereof

Abstract

The invention provides a diode type photoelectric sensor, which comprises a substrate, a perovskite film layer, an organic semiconductor layer and electrodes, wherein the perovskite film layer is arranged on a part of the upper surface of the substrate, the perovskite film layer is prepared by adopting a chemical vapor deposition method, the material of the perovskite film layer comprises lead halide and cesium halide, a molar ratio of the lead halide to the cesium halide is 1: 1, a part of the organic semiconductor layer is arranged on the upper surface of the substrate, the rest part of the organic semiconductor layer is arranged on the upper surface of the perovskite film layer, and the electrodes comprise a positive electrode and a negative electrode, so that the problems that in the prior art, a diode type photoelectric sensor is complex in preparation process, prone to electric leakage and large in dark current, only light intensity detection can be achieved, and light color information cannot be obtained are solved. The invention also provides a preparation method of the diode type photoelectric sensor.

Description

technical field [0001] The invention relates to the technical field of photoelectric sensors, in particular to a diode-type photoelectric sensor and a preparation method thereof. Background technique [0002] As a device that converts optical signals into electrical signals, photoelectric sensors play an important role in applications such as human-computer interaction, information transmission, and data acquisition in the intelligent age. Active layer materials that can be used in photoelectric sensors include inorganic semiconductors, organic semiconductors, and organic-inorganic hybrid semiconductors. However, limited by its working principle, most current photoelectric sensors can only detect the intensity of light, but cannot obtain the color information of light. [0003] The Chinese patent with publication number CN111987185 A discloses a double perovskite thin film device with photodiode effect and its preparation method and application. The invention spin-coats LNO...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a diode-type photoelectric sensor and its preparation method, which solves the problem that the diode-type photoelectric sensor in the prior art has a complicated preparation process and is easy to leak electricity, and there are many dark currents, which can only detect the intensity of light but cannot The problem of obtaining the color information of light

[0007] The beneficial effect of the diode-type photoelectric sensor of the present invention is that: the perovskite film layer is prepared by chemical vapor deposition, which reduces the preparation process of the diode-type photoelectric sensor in the prior art, and solves the problem of Solved the problem that the laminated structure in the diode-type photosensor in the prior art is easy to leak electricity; The material passing through the perovskite thin film layer includes lead halide and cesium halide, and the molar ratio of the lead halide and cesium halide is 1:1, The perovskite thin film layer formed is a cubic phase perovskite thin film layer composed of cesium element, lead element and halogen element at a ratio of 1:1:3, and the structure of the cubic phase perovskite thin film layer is dense, The morphology, uniformity and stability of the obtained perovskite film layer are relatively good, which can improve the photoelectric performance of the diode-type photosensor; and the lead halide is selected from lead chloride, lead bromide and lead halide. Any one of lead iodide, the cesium halide is selected from any one of cesium chloride, cesium bromide and cesium iodide, so that the perovskite film layer can be finely regulated by I - 、Br - , Cl - The ratio of the three kinds of halogen ions is used to detect the intensity and color of light; the invention solves the problem that the diode-type photoelectric sensor in the prior art has a complicated preparation process and is easy to leak electricity, and the dark current is relatively large, so it can only detect the intensity of light The problem of not being able to obtain the color information of light

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