A Perovskite Crystallization Control Strategy and Its Fabrication Method for Photovoltaic Devices
A photovoltaic device and perovskite technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, semiconductor devices, etc., can solve the problems that perovskite is difficult to achieve thermodynamic equilibrium, unideal lattice structure, and Pb cannot be coordinated , to achieve the effect of promoting commercial application, promoting diversity, and improving difficult operation
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Embodiment 1
[0042] Example 1: A photovoltaic cell prepared based on the perovskite crystallization regulation strategy of the present invention, which sequentially includes a transparent substrate, a metal oxide anode layer, a hole transport layer, a perovskite active layer, an electron transport layer, Hole blocking layer and metal cathode layer.
[0043] The corresponding abbreviations of some chemical substances in the present invention are as follows:
[0044]
[0045] In the present embodiment, the material of the transparent base is transparent glass; the material of the metal oxide anode layer is ITO; the p-type material PTAA is selected for use in the hole transport layer layer; the perovskite active layer is MAPbI 3 ; The electron transport layer is n-type material PC 61 BM, C 60 ; The hole blocking layer is LiF; the material of the metal cathode layer is Cu;
[0046] The preparation method of photovoltaic device specifically comprises the following steps:
[0047] Cleaning ...
Embodiment 2
[0061] The basic steps are the same as in Example 1, the difference being the preparation of the perovskite active layer, which specifically includes: immediately after the spin coating of the perovskite layer, cover the perovskite layer on the surface of the PDMS flexible membrane soaked with IPA or Tol for annealing, The annealing temperature was 100°C, and the annealing time was 10 min. Finally, the modified devices (PDMS / IPA) and (PDMS / Tol) were obtained respectively. The IPA or Tol are pure solvents. The PDMS flexible film is obtained by mixing a dimethylsiloxane monomer and a crosslinking agent at a volume ratio of 5:1, standing still, and heating at 100° C. for 4 hours.
[0062] performance testing
[0063] During the annealing process in Example 2, the PDMS flexible membrane can limit the volatilization of the perovskite solution and reduce the loss of organic cations through physical barriers. At the same time, the solution in the PDMS flexible film layer gradually...
Embodiment 3
[0065] The basic steps are consistent with Example 1, the difference is the preparation of the perovskite active layer, which specifically includes: after the spin coating of the perovskite layer is completed, immediately cover the perovskite layer on a layer soaked with IPA:MAI (wherein the concentration of MAI is 0.5 mg / ml) The surface of the PDMS flexible membrane in the growth regulation solution was annealed, the annealing temperature was 100°C, and the annealing time was 10 min. A modified device (PDMS / IPA:MAI) was obtained. MAI in the solution can fill the organic cation vacancies volatilized due to high temperature, thereby reducing the surface defects of the perovskite film and improving the film quality. The PDMS flexible film is obtained by mixing a dimethylsiloxane monomer and a crosslinking agent at a volume ratio of 8:1, standing still, and heating at 80° C. for 7 hours.
[0066] performance testing
[0067] During the annealing process in Example 3, the PDMS ...
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Abstract
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