Processing method of photovoltaic conductive FTO glass and battery
A processing method, FTO technology, applied in the fields of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of inability to find process parameters, scattering, narrowing of the laser adjustment window, etc., to increase the utilization rate of light, improve accuracy, and reduce scattering. or diffuse effect
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[0053] The present invention has no special limitation on the preparation method of the battery, and the battery can be prepared by the method of preparing the battery by using conductive FTO glass well known to those skilled in the art. In the present invention, the preparation method of the battery preferably includes:
[0054] The FTO glass obtained after the above method is processed by laser scribing P1 to etch away the FTO in a specified area;
[0055] The product after laser scribing P1 is sprayed with a titanium dioxide precursor solution and then sintered to obtain an electron transport layer;
[0056] Scraping the perovskite raw material on the surface of the electron transport layer and then annealing to obtain a perovskite absorption layer;
[0057] Part of the electron transport layer and the perovskite absorption layer are etched away by laser scribing P2 on the perovskite absorption layer;
[0058] The hole transport layer raw material is sprayed on the surfac...
Embodiment 1
[0090] FTO (SnO) was prepared on a glass substrate (length 650mm, width 550mm, thickness 3mm) by in-line chemical vapor deposition 2 :F) film, and by adjusting the raw material monobutyltin trichloride (C 4 H 9 SnCl 3 ) to achieve controllable haze of the FTO film; the specific preparation process is: C 4 H 9 SnCl 3 (MBTC) is the precursor, trifluoroacetic acid (CFCOOH, TFA) with a purity of 99% is used as the dopant, and nitrogen and water are used as reaction catalysts for coating; in the chemical vapor deposition process, the molar ratio of MBTC, TFA and water is 2:1:6, the pressure is N at 0.5~0.6Pa 2It is a carrier gas, which is vaporized at 175 °C after entering the evaporation chamber; after gasification, it enters the mixing chamber to mix and spray on the surface of the glass substrate at a temperature of 675 °C. The FTO solid film is the photovoltaic glass after the haze increase treatment, and the haze is 3.5%.
[0091] The area where the photovoltaic glass i...
Embodiment 2
[0093] FTO (SnO) was prepared on a glass substrate (length 650mm, width 550mm, thickness 3mm) by in-line chemical vapor deposition 2 :F) film, and by adjusting the raw material monobutyltin trichloride (C 4 H 9 SnCl 3 ) to achieve controllable haze of the FTO film; the specific preparation process is: C 4 H 9 SnCl 3 (MBTC) is the precursor, trifluoroacetic acid (CFCOOH, TFA) with a purity of 99% is used as the dopant, and nitrogen and water are used as reaction catalysts for coating; in the chemical vapor deposition process, the molar ratio of MBTC, TFA and water is 1:1:6, pressure 0.5~0.6Pa N 2 It is a carrier gas, which is vaporized at 175 °C after entering the evaporation chamber; after gasification, it enters the mixing chamber and is mixed and sprayed on the surface of the glass substrate at a temperature of 675 °C. The mixed gas reacts at the gas-solid interface, and the deposition forms dense The FTO solid film is the photovoltaic glass after increasing haze treat...
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