Trench power semiconductor device
A power semiconductor and trench technology, applied in the field of trench power semiconductor devices, can solve the problems of unstable SGT structure, affecting the reliability of SGT devices, and easy conduction, so as to reduce the accumulation of excess holes, reduce the peak value of the electric field, The effect of improving application ability
Active Publication Date: 2022-03-08
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology
[0005] Although the existing SGT structure can achieve a good compromise between conduction loss and driving loss, due to the introduction of the shield gate, the SGT structure has time-related instability of avalanche breakdown, which has seriously affected the SGT device. reliability
Specifically, there is a parasitic diode in the SGT device, which is blocked in the forward direction and easily turned on in the reverse direction.
Method used
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Embodiment Construction
[0027] figure 1 It is a schematic diagram of the structure of a trench power semiconductor device, such as figure 1 As shown, the trench power semiconductor device includes a cell region (Cell) 100a and a terminal region (Terminal) 100b set around the cell region 200a, the cell region 100a and the terminal region 100b are located at In the n-type epitaxial layer (n typeEPI) 101 grown on the n-type substrate (n type Sub) 100, a first trench 110 is formed in the cell region (Cell) 100a, and a source electrode is formed in the first trench 110 Polysilicon 111 and gate polysilicon 112, the parasitic diodes formed by the P-body region 105 on both sides of the first trench 110, the n-type epitaxial layer 101 and the n-type doped region 106, such as figure 1 shown. When a reverse bias occurs in the application of the peripheral circuit, that is, when the source metal 103 is connected to a high potential, the drain metal 108 is connected to a low potential, and the gate polysilicon ...
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The invention provides a trench power semiconductor device, which is characterized in that a first diode and a second diode are correspondingly formed at a terminal junction position and / or a mesa position of a deep trench in a device terminal area, so that a branch formed by reversely connecting the first diode and the second diode in series is added between source metal and drain metal. When the parasitic diode of the device is positively conducted, the first diode is not conducted; when the excess hole cumulant exceeds a certain degree during the reverse recovery period of the parasitic diode, the second diode in the reversely serially connected branch is exhausted and punctured, and the first diode is conducted, that is, a plurality of efficient hole extraction paths with almost no adverse effect are added in the terminal area; the accumulation amount of excess holes near a transition region between the cellular region and the terminal region is greatly reduced, the peak value of an electric field is reduced, a dynamic avalanche weak point is reinforced and reliable, and the application capability of the device under a large inductance condition and a rapid switching condition is greatly improved.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a trench power semiconductor device. Background technique [0002] At present, power semiconductor devices are more and more widely used in daily life, production and other fields, especially power metal-oxide-semiconductor field-effect transistors, because they have faster switching speeds, smaller drive currents, and wider safe working conditions. Therefore, it has been favored by many researchers. Nowadays, power semiconductor devices are developing rapidly in the direction of increasing operating voltage, increasing operating current, reducing on-resistance and integration. [0003] Power MOSFET is a multi-subconductor device, which has the advantages of fast switching speed, high input impedance, and easy driving. The traditional double-diffusion MOSFET uses double-diffusion technology to form the body region, so the cell width is large, and at...
Claims
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Login to View More IPC IPC(8): H01L29/78
CPCH01L29/7813H01L29/7804H01L29/7808
Inventor 周振强
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP