Interface barrier material and preparation method thereof, and multilayer perovskite solar cell
A technology for solar cells and barrier materials, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of components that cannot be kept fixed for a long time, and achieve the effects of efficient and stable preparation and high-efficiency and stable devices
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[0040] The embodiment of the present application provides a method for preparing an interface barrier material, which includes the following steps: dissolving monomer A, monomer B and an initiator in a solvent, and performing a polymerization reaction at 95-105°C to obtain an interface barrier material;
[0041] Wherein, the structural formula of monomer A includes one of the following:
[0042]
[0043] R 1 , R 2 , R 3 , R 4 At least one of them contains an olefin, and R is an olefin derivative;
[0044] The chemical formula of monomer B is R 5 For multi-branched olefins.
[0045] In some embodiments, the initiator includes at least one of an organic peroxide initiator, an inorganic peroxide initiator, an azo initiator, and a redox initiator, and the solvent includes ethyl acetate (EA), At least one of chlorobenzene (CB), isopropanol (IPA);
[0046] The structural formula of monomer A is
[0047] The chemical formula of monomer B is
[0048]Specifically, org...
Embodiment 1
[0071] This embodiment provides a method for preparing a multilayer perovskite solar cell, comprising the following steps:
[0072] S1. Provide FTO conductive glass substrate;
[0073] S2, 5g urea, 100μL thioglycolic acid, 5mL hydrochloric acid (37wt%) are dissolved in 400mL deionized water successively to form a solution; SnCl 2 2H 2 O powder was added to this solution to obtain a concentration of 12 mM SnCl 2 2H 2 O suspension;
[0074] S3, to 12mM SnCl 2 2H 2 The O suspension was diluted to 2 mM with ultrapure water, and then the FTO conductive glass substrate was soaked in the diluted SnCl 2 2H 2 O suspension, let it stand in an oven at 70°C for 4h, then rinse the FTO conductive glass substrate with deionized water, and then use N 2 Blow dry, and finally anneal at 180 °C for 1 h to obtain SnO 2 The thin film is the first transport layer (i.e. the electron transport layer);
[0075] S4. Weigh 21.84mg methylamine bromide (MABr), 77.07mg lead bromide (PbBr) respecti...
Embodiment 2
[0084] This embodiment provides a method for preparing a multilayer perovskite solar cell, comprising the following steps:
[0085] S1. Provide ITO conductive glass substrate;
[0086] S2. Dissolve 4mg of PTAA in 1mL of CB, shake for 1h to dissolve to obtain a solution, take 30μL of the solution and drop it on the ITO conductive glass substrate, spin-coat at 6000rpm for 30s, and then anneal at 100°C for 10min, which is the first transmission layer (i.e. hole transport layer);
[0087] S3, prepared (MA 0.15 FA 0.8 Cs 0.05 )PbBr 0.45 I 2.55Perovskite precursor solution (the specific preparation method is the same as in Example 1), take 30 μL of perovskite precursor solution and add it dropwise on the first transmission layer, spin coat it at a speed of 5000 rpm for 30 seconds, and add 130 μL dropwise at the last 5 seconds The anti-solvent (CB or EA) extracts the excess solvent, and then anneals at 100°C for 45 minutes to prepare the perovskite layer (referred to as the fir...
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