Graphene film and preparation method thereof

A graphene film and graphene technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve difficult problems and achieve excellent thermal conductivity

Pending Publication Date: 2022-03-25
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a kind of graphene film and preparation method thereof, this graphene film material has high temperature resistance, all has excellent thermal conductivity in the plane and vertical plane direction, has solved two kinds of graphite / graphene film at present. There are insurmountable problems in the preparation process and application performance, and can be applied to the fields of heat dissipation film materials and thermal interface materials

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  • Graphene film and preparation method thereof
  • Graphene film and preparation method thereof
  • Graphene film and preparation method thereof

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Embodiment 1

[0042] In this embodiment, the reaction furnace cavity is heated to 1000°C under a nitrogen protective atmosphere, and a compound with a porosity of 500PPI and a surface density of 2.5g / cm is added to the constant temperature zone of the reaction furnace cavity. 3 The three-dimensional interconnected high-porosity and high-density porous nickel is introduced into hydrogen gas and kept warm for 10 minutes. The flow rate of hydrogen gas is 600 sccm. The flow rate of the gas is 620 sccm, the flow ratio of ethylene and hydrogen in the mixed gas is 1:30, and the reaction time is 30 minutes. Graphene is catalyzed and grown on the surface of a three-dimensionally connected high-porosity and high-density porous nickel substrate.

[0043] Take out the three-dimensional interconnected high-density graphene skeleton grown on the porous metal substrate under a nitrogen protective atmosphere, put it into a 3mol / L hydrochloric acid aqueous solution (etching solution), and keep it at 80°C for...

Embodiment 2

[0050] Under the protective atmosphere of argon, the reaction furnace cavity is heated to 1000°C, and the porosity is 800PPI, and the surface density is 3.5g / cm2. 3 The three-dimensional interconnected high-porosity and high-density porous copper is fed with hydrogen, and the flow rate of hydrogen is 500 sccm. The function of feeding hydrogen first is to remove the oxide layer on the surface of the substrate; The flow ratio of methane and hydrogen in the mixed gas is 510sccm, the flow ratio of methane and hydrogen in the mixed gas is 1:50, and the reaction time is 50min. Graphene is catalyzed and grown on the surface of a three-dimensionally connected high-porosity and high-density porous copper substrate.

[0051] Take out the three-dimensional interconnected high-density graphene skeleton grown on the porous metal substrate under a nitrogen protective atmosphere, put it into 2mol / L sulfuric acid aqueous solution (etching solution), and keep it at 80°C for 120min to completely...

Embodiment 3

[0053] Under the protective atmosphere of argon, the reaction furnace cavity is heated to 1100°C, and the porosity is 1100PPI, and the surface density is 5.1g / cm2. 3 The three-dimensionally connected porous nickel with high porosity and high density is fed with hydrogen, and the flow rate of hydrogen is 500 sccm. The flow rate of the gas is 1010sccm, the flow ratio of methane and hydrogen in the mixed gas is 1:50, and the reaction time is 70min. Graphene is catalyzed and grown on the surface of a three-dimensionally connected high-porosity and high-density porous nickel substrate.

[0054] Take out the three-dimensional interconnected high-density graphene skeleton grown on the porous metal substrate under a nitrogen protective atmosphere, put it into a 3mol / L aqueous hydrochloric acid solution (etching solution), and keep it at 80°C for 90 minutes to completely remove it. The nickel in the graphene skeleton is removed, and after the graphene skeleton is taken out, cleaned and...

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Abstract

The invention relates to the technical field of new materials and application thereof, in particular to a graphene film and a preparation method thereof. According to the preparation method, three-dimensional communicated porous metal with high porosity and high density is taken as a template, and a graphene layer is catalytically grown on the surface of the metal template under proper temperature and atmosphere conditions by utilizing a chemical vapor deposition process. And removing the metal substrate to obtain the three-dimensional communicated porous graphene skeleton. And pressing the three-dimensional graphene skeleton into the flexible film by applying pressure. The thickness, pores and the like of the graphene film can be regulated and controlled by regulating and controlling preparation parameters. The method is simple in process and low in production cost. The prepared graphene film has very high crystallization quality and flexibility, and has excellent heat conduction and electric conduction performance in the in-plane direction and in the vertical plane direction. As the graphene film is of a full-carbon structure with high crystallization quality, the graphene film can be stably used in an air environment below 800 DEG C, and has huge application potential in the fields of heat conduction, electric conduction, electromagnetic shielding and the like.

Description

technical field [0001] The invention relates to the technical field of new materials and their applications, in particular to a graphene film and a preparation method thereof. Background technique [0002] As a new material, graphene has excellent electrical and thermal conductivity, and its electron mobility can reach 200,000 cm 2 V -1 the s -1 , which can achieve the highest current transfer density at room temperature, and the thermal conductivity is as high as 5300W m -1 K -1 , much higher than that of carbon nanotubes and diamond. In addition, graphene is a honeycomb perfect lattice composed of a single layer of carbon atoms, which has high structural and chemical stability. Therefore, graphene has great application potential in the fields of thermal conductivity, electrical conductivity, and electromagnetic shielding. [0003] With the miniaturization and integration of electronic equipment, the power density of electronic equipment has risen sharply, and the hea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194C01B2204/04C01B2204/24C01B2204/22
Inventor 任文才马超群刘海超成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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