Check patentability & draft patents in minutes with Patsnap Eureka AI!

Solar-blind AlGaN ultraviolet photoelectric detector and preparation method thereof

A technology of electrical detectors and ultraviolet light, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of low electron saturation mobility, weak visible light filtering, and narrow bandgap width, etc., and achieve excellent material properties, Increased responsivity and detectability, and easy device fabrication

Pending Publication Date: 2022-03-25
SOUTH CHINA UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional GaN-based ultraviolet photodetectors have problems such as narrow band gap and low electron saturation mobility, resulting in problems such as narrow response frequency band, weak filtering of visible light, severe device heating, and poor stability. It is difficult to meet the growing demand for devices. Miniaturization, integration, and shorter wavelength requirements, so there is an urgent need to develop a new generation of ultraviolet optoelectronic devices that can be applied to the working condition of 260nm wavelength and meet the requirements of device miniaturization and integration applications. Group III represented by AlGaN The research on nitride multi-component ultraviolet photodetectors has risen from this

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar-blind AlGaN ultraviolet photoelectric detector and preparation method thereof
  • Solar-blind AlGaN ultraviolet photoelectric detector and preparation method thereof
  • Solar-blind AlGaN ultraviolet photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a method for preparing a sun-blind AlGaN ultraviolet photodetector, comprising the following steps:

[0043] (1) if figure 1 As shown, a non-doped N-polar surface AlN buffer layer 2, a carbon-doped N-polar surface AlN layer 3, and a carbon-doped N-polar surface composition graded Al y Ga 1-y N layer 4 and non-doped N polar surface Al x Ga 1-x N layer (thin film) 5, obtains the epitaxial wafer of ultraviolet photodetector;

[0044] (2) Place the AlGaN ultraviolet photodetector epitaxial wafer obtained in step (1) in sequence in acetone, deionized water, and absolute ethanol for ultrasonic treatment, take it out, wash it with deionized water, and dry it with hot high-purity nitrogen;

[0045] (3) Mesa isolation pattern preparation: the AlGaN rectifier epitaxial wafer obtained in step (2) is subjected to photolithography preparation of insulating mesa isolation pattern: apply photoresist evenly on the AlGaN rectifier epitaxial wafer obtained in...

Embodiment 2

[0065] This embodiment provides a method for preparing a sun-blind AlGaN ultraviolet photodetector, which specifically includes:

[0066] (1) if figure 1 As shown, AlGaN ultraviolet photodetector epitaxial wafers were grown on silicon substrates by metal-organic chemical vapor deposition, including non-doped N-polar surface AlN buffer layer 2, carbon-doped N-polar surface AlN layer 3, carbon Doped N polar surface composition graded Al y Ga 1-y N layer 4 and non-doped N polar surface Al x Ga 1-x N layer 5, where:

[0067] A non-doped N-polar surface AlN buffer layer 2 is grown on the silicon substrate 1 with a thickness of 450 nm;

[0068] The carbon-doped N-polar surface AlN layer 3 is grown on the N-polar surface AlN buffer layer 2, and its doping concentration is 2.0×10 18 cm -3 , with a thickness of 420nm;

[0069] Carbon-doped N polar surface composition graded Al y Ga 1-y The N layer 4 is grown on the carbon-doped semi-insulating N-polar AlN buffer layer 3 with ...

Embodiment 3

[0086] This embodiment provides a method for preparing a sun-blind AlGaN ultraviolet photodetector, which specifically includes:

[0087] (1) AlGaN ultraviolet photodetector epitaxial wafers are grown on silicon substrates by metal-organic chemical vapor deposition, including non-doped N-polar surface AlN buffer layer 2, carbon-doped N-polar surface AlN layer 3, carbon Doped N polar surface composition graded Al y Ga 1-y N layer 4 and non-doped N polar surface Al x Ga 1-x N layer 5, where:

[0088] A non-doped N-polar surface AlN buffer layer 2 is grown on the silicon substrate 1 with a thickness of 500nm;

[0089] The carbon-doped N-polar surface AlN layer 3 is grown on the N-polar surface AlN buffer layer 2, and its doping concentration is 3×10 18 cm -3 , with a thickness of 440nm;

[0090] Carbon-doped N polar surface composition graded Al y Ga 1-y The N layer 4 is grown on the carbon-doped semi-insulating N-polar AlN buffer layer 3, and its doping concentration is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solar-blind AlGaN ultraviolet photoelectric detector and a preparation method thereof. The solar-blind AlGaN ultraviolet photoelectric detector comprises an ultraviolet photoelectric detector epitaxial wafer and an insulating layer, wherein a non-doped N polar surface AlN buffer layer, a carbon-doped N polar surface AlN layer, a carbon-doped N polar surface component gradient Al < y > Ga < 1-y > N layer and a non-doped N polar surface Al < x > Ga < 1-x > N layer are sequentially grown on a silicon substrate; the insulating layer is arranged on the ultraviolet photoelectric detector epitaxial wafer; the ultraviolet photoelectric detector comprises an ultraviolet photoelectric detector epitaxial wafer, an ohmic contact electrode, a Schottky contact electrode and SiNz passivation layers arranged on the two sides of the ultraviolet photoelectric detector epitaxial wafer, x is equal to 0.5-0.8, y is equal to 0.75-0.95, and z is equal to 1.33-1.5. According to the invention, the preparation of the high-performance solar-blind AlGaN ultraviolet photoelectric detector is realized, and the responsivity and the detectivity of the AlGaN ultraviolet photoelectric detector in an ultraviolet solar-blind wave band are improved.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to a sun-blind AlGaN ultraviolet photodetector and a preparation method thereof. Background technique [0002] As an optoelectronic component that plays an important role in the fields of national defense early warning, weather monitoring, and communication security, ultraviolet photodetectors have attracted much attention from all walks of life. Traditional GaN-based ultraviolet photodetectors have problems such as narrow band gap and low electron saturation mobility, resulting in problems such as narrow response frequency band, weak filtering of visible light, severe device heating, and poor stability. It is difficult to meet the growing demand for devices. Miniaturization, integration, and shorter wavelength requirements, so there is an urgent need to develop a new generation of ultraviolet optoelectronic devices that can be applied to the working condition of 260nm wavelength and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0304H01L31/036H01L31/108H01L31/18H01L21/02
CPCH01L31/108H01L31/1852H01L31/1848H01L31/022408H01L31/03048H01L31/036H01L31/02161H01L21/02381H01L21/0254H01L21/0262Y02P70/50
Inventor 王文樑李林浩李国强江弘胜朱锦昌
Owner SOUTH CHINA UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com