Lateral double-diffusion field effect transistor, manufacturing method, chip and circuit

Abstract

The invention provides a lateral double-diffusion field effect transistor, a manufacturing method, a chip and a circuit, and the transistor comprises a substrate which is provided with a high-voltage N-type well; the first N-type drift region, the P-type body region and the second N-type drift region are adjacently arranged and are formed in the high-voltage N-type well; the first tensile strain region is formed in the first N-type drift region; the second tensile strain region is formed in the second N-type drift region; the first drain electrode is formed in the first tensile strain area; the second drain electrode is formed in the second tensile strain area; the first source electrode and the second source electrode are formed in the P-type body region; the substrate electrode is formed between the first source electrode and the second source electrode; the first grid electrode is formed on the upper surfaces of the first N-type drift region and the P-type body region; and the second grid electrode is formed on the upper surfaces of the P-type body region and the second N-type drift region, and a gap is formed between the second grid electrode and the first grid electrode. According to the transistor provided by the invention, the mobility of carriers in a channel can be improved, and the driving capability and speed of the transistor are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a lateral double-diffused field-effect transistor, a lateral double-diffused field-effect transistor, a chip and a circuit. Background technique [0002] As a lateral power device, the Lateral Double-Diffused MOSFET (LDMOS) has its electrodes located on the surface of the device, and is easy to achieve monolithic integration with low-voltage signal circuits and other devices through internal connections. With the advantages of high voltage, large gain, good linearity, high efficiency, and good broadband matching performance, it has been widely used in power integrated circuits, especially low power consumption and high frequency circuits. [0003] In the prior art, silicon is often used as the substrate in the channel region of the lateral double-diffused field effect transistor, and the carrier mobility in the silicon substrate is low, which aff...

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Problems solved by technology

[0004] Aiming at the technical problem of poor driving capability and speed of lateral double diffused field effect transistors in the prior art, the present invention provides a method for manufacturing a lateral double diffused field effect transistor, a lateral

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