Water-based microelectronic stripping and cleaning combined agent

Abstract

The invention discloses a water-based microelectronic stripping and cleaning combined agent which comprises pure water, a metal protection solution, a degumming solution, a corrosion inhibitor, a compatible solution, sodium persulfate and isopropanol, the compatible solution is propylene glycol, and the metal protection solution comprises pure water, polymaleic anhydride and zinc diethylphosphinate. The degumming liquid is a methyl pyrrolidone solution of hypochlorous acid quaternary alkyl ammonium, and the corrosion inhibitor is an aqueous solution of sedoheptulose. The invention belongs to the technical field of production and cleaning of electronic components, and particularly provides a cleaning agent which can reduce the content of halogen ions on the surface of a wafer, form a metal protective film on the surface of metal, prevent corrosion of chloride ions, oxygen and hydroxyl ions to the metal, quickly clean photoresist, further reduce corrosion to the metal and improve the production efficiency. And the water-based microelectronic stripping and cleaning combination agent can be used for dissolving or washing away etching residues.

Description

technical field [0001] The invention belongs to the technical field of production and cleaning of electronic components, and specifically refers to a water-based microelectronic peeling and cleaning composition. Background technique [0002] In the back-end of line microelectronic component preparation process of Al or Al(Cu) metallized substrate, an essential step is to deposit a photoresist film on the wafer substrate, and then use the photoresist as a mask The film (Mask) forms a circuit pattern, after baking and development, and then transfers the obtained pattern to the underlying base material (electrolyte or metal layer) via reactive plasma etching gas. The etching gas selectively etches the area of ​​the substrate not protected by the photoresist, and the structures formed by etching mainly include metal lines, bonding pads and vias. The etching gas is usually a halogen-containing gas. During the plasma etching process, due to the interaction between the plasma gas,...

AI Technical Summary

Problems solved by technology

The etching gas is usually a halogen-containing gas. During the plasma etching process, due to the interaction between the plasma gas, the etching substrate material and the photoresist, an etching residue will be formed on or around the sidewall of the etching substrate, and it will also cause Cross-linking of the photoresist mask material, making it more difficult to remove

[0003] If the etching residue cannot be completely cleaned during the cleaning process, it will directly affect the conduction ability of the metal layer formed in the subsequent gold plating process, greatly reducing the yield