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Photoelectric detector based on TaIrTe4/Si heterojunction and preparation method thereof

A photodetector and heterojunction technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low detection rate, low responsivity, narrow detection wavelength range, etc., and achieve stable and reproducible optical switching curves. Good, easy-to-operate effect

Pending Publication Date: 2022-04-08
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to solve the problems of narrow detection wavelength range, low responsivity and low detection rate, etc., realize high-sensitivity photoelectric detection in the range from ultraviolet to infrared

Method used

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  • Photoelectric detector based on TaIrTe4/Si heterojunction and preparation method thereof
  • Photoelectric detector based on TaIrTe4/Si heterojunction and preparation method thereof
  • Photoelectric detector based on TaIrTe4/Si heterojunction and preparation method thereof

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Embodiment 1

[0031] figure 1 For the present invention based on TaIrTe 4 / Si heterojunction photodetector structure schematic diagram, such as figure 1 shown. Among them, metal plate bottom electrode 1, silver paste 2, three-dimensional Si 3, silicon dioxide layer 4, TaIrTe 4 Layer 5, top electrode 6. The photodetector is based on TaIrTe 4 / Si heterojunction photodetector with a top electrode structure of 6 / TaIrTe 4 / Si heterojunction 5 / bottom electrode 1, the TaIrTe 4 / Si heterojunction is in Si / SiO 2 The Si window is etched on the substrate to make the TaIrTe 4 Nanosheets are obtained in full contact with Si, and in TaIrTe 4 TaIrTe outside the Si heterojunction 4 The edge makes the top electrode.

[0032] In this embodiment, the bottom metal plate electrode is a copper plate, and the Si substrate and the copper plate are pasted together with silver paste, and dried on a hot table, so as to ensure ohmic contact between the copper plate and the Si substrate; in addition, the th...

Embodiment 2

[0034] A TaIrTe-based 4 / Si heterojunction photodetector preparation method, such as figure 2 shown, including the following steps:

[0035] 1. On Si / SiO2 2 Spin-coat photoresist on the substrate at a speed of 4000 rpm, and dry on a hot stage at 100°C for 4 minutes;

[0036] 2. Using ultraviolet lithography technology, the Si / SiO coated with photoresist 2 The area of ​​the substrate is photoetched out to 500×500μm 2 window, and developed, blow dry with nitrogen gun;

[0037] 3. Soak the substrate with a window in buffered oxide etchant (BOE) for about 1 min, then take it out, wash it with clean water 3-4 times, and blow it dry with a nitrogen gun;

[0038] 4. Soak the film processed in step 3 in acetone solution for about 10s, wash off the photoresist, rinse with water 1-2 times, dry it with a nitrogen gun, and dry it in Si / SiO 2 The middle area of ​​the substrate gets 500 x 500 μm 2 Dimensions of the Si window;

[0039] 5. Repeatedly overlap with thermal release tape...

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Abstract

The invention belongs to the technical field of photoelectric detectors, and discloses a TaIrTe4 / Si heterojunction-based photoelectric detector and a preparation method thereof. The photoelectric detector is a photoelectric detector based on a TaIrTe4 / Si heterojunction, the structure of the photoelectric detector is a top electrode / TaIrTe4 / Si heterojunction / plate bottom electrode, the TaIrTe4 / Si heterojunction is obtained by etching a Si window on a Si / SiO2 substrate and enabling a TaIrTe4 nanosheet to be in full contact with Si, and the top electrode is manufactured on the TaIrTe4 edge outside the TaIrTe4 / Si heterojunction. The device shows light responsivity under the irradiation of 808 nm, and is high in detection rate and high in response speed. A broadband sensitive detection area from 325 nm to 1550 nm is achieved, an optical switch curve is stable and good in reproducibility, and a new way can be opened up for development of Weyl semimetal two-dimensional materials in application of optoelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and more specifically, relates to a TaIrTe-based 4 / Si heterojunction photodetector and its preparation method. Background technique [0002] Photodetection devices based on two-dimensional materials have been widely discovered and studied in modern communication and sensing systems. However, there are still key technical difficulties for such photodetectors to obtain high-sensitivity photodetection in the low photon energy spectrum range. Weyl semimetals have a gapless linear dispersion and a topologically protected band structure, which makes photodetectors based on it perform well in terms of fast response, self-powered operation, and ultrawideband detection. However, the inherent high dark current of photodetectors based on Weyl semimetals is a major bottleneck leading to severe degradation of device performance. In addition, the thermal effect during the photodetection process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCY02P70/50
Inventor 张黎韩晓宁张诗豪
Owner SOUTH CHINA NORMAL UNIVERSITY
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