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Indium antimonide crystal growth method and crystal growth furnace

A crystal growth furnace and crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems affecting the quality of indium antimonide crystals and prone to thermal stress, so as to avoid heating, improve growth quality, The effect of energy saving

Active Publication Date: 2022-04-12
无锡晶名光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that thermal stress easily exists during the growth process of indium antimonide crystals and affects the quality of indium antimonide crystals, the present invention provides a low-stress indium antimonide crystal growth method and a crystal growth furnace, which can realize indium antimonide crystal growth. Real-time local heat treatment during the growth process can improve the stress relief effect of indium antimonide crystals and the growth quality of indium antimonide crystals

Method used

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  • Indium antimonide crystal growth method and crystal growth furnace
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  • Indium antimonide crystal growth method and crystal growth furnace

Examples

Experimental program
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Effect test

Embodiment 1

[0055] Example 1, the InSb polycrystalline raw material is heated to a temperature of 530° C., the rotation rate of the indium antimonide crystal is 7 rpm, the growth rate of the indium antimonide crystal is 16 mm / h, the growth diameter of the indium antimonide is 2 inches, and the electromagnetic induction heating The inner diameter of the coil is 2.5 inches, the induction frequency is 20Hz, the current is 1A, the modulation pulse frequency is 0.2Hz, and the duty cycle is 0.1. The total height of the electromagnetic induction heating coil is 30mm. After the growth length of the indium antimonide crystal exceeds the height of the heat shield mouth and reaches the height of the electromagnetic induction heating coil, electromagnetic induction heating is started until the growth of the indium antimonide crystal is completed. During the growth process of indium antimonide crystal, pure Ar gas protection gas is passed into the furnace body to prevent oxidation. The grown InSb cry...

Embodiment 2

[0056]Embodiment 2, the InSb polycrystalline raw material is heated to a temperature of 530° C., the speed range of indium antimonide crystal rotation is 7 rpm, the speed range of indium antimonide crystal growth is 14 mm / h, and the growth diameter of indium antimonide crystal is 3 inches. The inner diameter of the electromagnetic induction heating coil is 3.5 inches, the induction frequency is 100Hz, the current is 5A, the modulation pulse frequency is 0.8Hz, and the duty ratio is 0.3. The height of the electromagnetic induction heating coil is 50mm. After the crystal growth length exceeds the height of the heat shield mouth and reaches the height of the electromagnetic induction heating coil, the electromagnetic induction heating is started until the growth of the indium antimonide crystal is completed. During the growth process of indium antimonide crystal, pure Ar gas protection gas is passed into the furnace body to prevent oxidation. The grown InSb crystals were cut int...

Embodiment 3

[0057] Embodiment 3, the InSb polycrystalline raw material is heated to a temperature of 540° C., the rotation rate of the indium antimonide crystal is in the range of 10 rpm, and the growth rate of the indium antimonide crystal is in the range of 10 mm / h. The indium antimonide crystal growth diameter is 4 inches, and the inner diameter of the electromagnetic induction heating coil is 3.5 inches. The induction frequency is 200Hz, the current is 9A, the modulation pulse frequency is 5Hz, and the duty ratio is 0.1. The height of the electromagnetic induction heating coil is 100mm. After the growth length of the indium antimonide crystal exceeds the height of the heat shield mouth and reaches the height of the electromagnetic induction heating coil, electromagnetic induction heating is started until the growth of the indium antimonide crystal is completed. During the growth process of indium antimonide crystal, pure Ar gas protection gas is passed into the furnace body to preven...

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Abstract

The invention discloses an indium antimonide crystal growth method and a crystal growth furnace, the indium antimonide crystal growth method can reduce the stress of indium antimonide crystals, the method is realized based on the crystal growth furnace, the crystal growth furnace comprises a furnace body, a crucible arranged in the furnace body and a heat shield located above the crucible, the crucible contains indium antimonide polycrystalline raw materials, and the heat shield is located above the crucible. An electromagnetic induction heating coil is arranged in the heat shield; the electromagnetic induction heating coil sleeves the indium antimonide crystal and corresponds to the local interval of the indium antimonide crystal; indium antimonide crystal growth is carried out by using a crystal growth furnace based on a Czochralski method, the indium antimonide crystal sequentially penetrates through a screen opening of the heat screen and the electromagnetic induction heating coil during growth, and the indium antimonide crystal is periodically heated through the electromagnetic induction heating coil.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a low-stress indium antimonide crystal growth method and a crystal growth furnace. Background technique [0002] Indium antimonide (InSb) is a DI-V group semiconductor crystal material with stable physical and chemical properties, narrow band gap, small electron effective mass, and high electron mobility. It is widely used in magnetoresistive elements and Hall Devices, infrared detectors and other electronic components. [0003] The indium antimonide growth equipment is a crystal growth furnace. At present, the method used to maintain the heat exchange balance at the solid-liquid interface during the growth of indium antimonide is to equip a heat shield in the crystal growth furnace, through which the grown indium antimonide The crystal section is isolated from the melt furnace below. However, this method causes a large difference in the heat dissipation environment of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/40C30B28/10C30B33/02
Inventor 程鹏程波陈元瑞
Owner 无锡晶名光电科技有限公司
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