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Deep ultraviolet detector and preparation method thereof

A deep ultraviolet and device technology, applied in semiconductor devices, electrical components, final product manufacturing, etc., can solve problems such as insensitivity of ultraviolet detectors, and achieve the effects of improving photoelectric conversion efficiency, enhancing hole injection efficiency, and excellent electrical conductivity.

Active Publication Date: 2022-04-15
CHANGSHU INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned defects in the prior art, the task of the present invention is to provide a deep ultraviolet detection device, which realizes deep ultraviolet detection with a response wavelength of 200-300 nm, and solves the problem caused by the similar ionization coefficients of electrons and holes in ultraviolet photodetectors. Insensitivity of the UV detector

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  • Deep ultraviolet detector and preparation method thereof

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Embodiment 1

[0029] Example 1, please combine figure 1 As shown, the structure of the deep ultraviolet detection device in this embodiment is as follows: it includes an aluminum nitride substrate 1, an AlN nucleation layer 2, and Si-doped n-type β-phase Ga 2 o3 Layer 3, β-phase Ga with a repetition period of 10 pairs 2 o 3 / Al x In y Ga 1-x-y O active layer 4, x=0.4, y=0.3, Mg-doped p-type β-phase Ga 2 o 3 Layer 5, B-doped p-type diamond film layer 6, carbon nanotube film transparent conductive layer 7 and Na 3 AlF 6 Protective layer 8, in Si-doped n-type β-phase Ga 2 o 3 The n-type ohmic electrode 9 is drawn out from the layer 3, and the p-type ohmic electrode 10 is drawn out on the transparent conductive layer 6 of the carbon nanotube film.

[0030] The thickness of the AlN nucleation layer is 100nm, and the Si-doped n-type β-phase Ga 2 o 3 The thickness of the layer is 2000nm, and its doping concentration is 5×10 20 cm -3 , β-phase Ga 2 o 3 / Al x In y Ga 1-x-y The tot...

Embodiment 2

[0041] Example 2, the structure of the deep ultraviolet detection device of this example is as follows: it includes an aluminum nitride substrate, an AlN nucleation layer, and Si-doped n-type β-phase Ga 2 o 3 β-phase Ga with a repetition period of 6 pairs 2 o 3 / Al x In y Ga 1-x-y O active layer, x=0.4, y=0.3, Mg-doped p-type β-phase Ga 2 o 3 layer, B-doped p-type diamond film layer, carbon nanotube film transparent conductive layer and Na 3 AlF 6 protective layer, in Si-doped n-type β-phase Ga 2 o 3 The n-type ohmic electrode is drawn out on the layer, and the p-type ohmic electrode is drawn out on the transparent conductive layer of the carbon nanotube film.

[0042] The thickness of the AlN nucleation layer is 70nm, and the Si-doped n-type β-phase Ga 2 o 3 The thickness of the layer is 1200nm, and its doping concentration is 5×10 20 cm -3 , β-phase Ga 2 o 3 / Al x In y Ga 1-x-y The total thickness of the O active layer is 600 nm, Mg-doped p-type β-phase Ga...

Embodiment 3

[0044] Embodiment 3, the structure of the deep ultraviolet detection device of this embodiment is as follows: it includes an aluminum gallium nitride substrate, an AlN nucleation layer, and a Sn-doped n-type β-phase Ga 2 o 3 β-phase Ga with a repeating period of 3 pairs 2 o 3 / Al x In y Ga 1-x-y O active layer, x=0.4, y=0.1, Zn-doped p-type β-phase Ga 2 o 3 layer, B-doped p-type diamond film layer, carbon nanotube film transparent conductive layer and NdF 3 protective layer, in Sn-doped n-type β-phase Ga 2 o 3 The n-type ohmic electrode is drawn out on the layer, and the p-type ohmic electrode is drawn out on the transparent conductive layer of the carbon nanotube film.

[0045] The thickness of the AlN nucleation layer is 35nm, and the Sn-doped n-type β-phase Ga 2 o 3 The thickness of the layer is 600nm, and its doping concentration is 1×10 19 cm -3 , β-phase Ga 2 o 3 / Al x In y Ga 1-x-y The total thickness of the O active layer is 250 nm, Zn-doped p-type β-...

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Abstract

The invention discloses a deep ultraviolet detector which comprises a substrate, an AlN nucleating layer, an n-type beta-phase Ga2O3 layer, a beta-phase Ga2O3 / AlxInyGa1-x-yO active layer, a p-type beta-phase Ga2O3 layer, a p-type diamond film layer, a carbon nanotube film transparent conductive layer and a fluoride protective layer which are sequentially stacked from bottom to top, and an n-type ohmic electrode is led out of the n-type beta-phase Ga2O3 layer. And a p-type ohmic electrode is led out from the carbon nanotube film transparent conductive layer. The invention also discloses a preparation method of the deep ultraviolet detector. According to the deep ultraviolet detection device, the responsivity of the detector to weak deep ultraviolet signals is improved, the energy loss of photon transmission is reduced, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to a photodetection device and a preparation method thereof, in particular to a deep ultraviolet detection device and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors have important application value and development prospects in both military and civilian applications, such as ultraviolet warning and guidance, detection of hydrocarbon combustion flames, detection of biochemical genes, research in ultraviolet astronomy, short-distance communication and skin diseases treatment etc. [0003] Most of the existing ultraviolet detection devices are prepared based on nitride materials or MgZnO oxide systems. Due to the limitations of the existing preparation technology, the quality of the nitride material thin film is not high, p-type doping is difficult, and there are a large number of defects in the material both on the surface and at the layer interface, which causes the carrier tunneling mechani...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/102H01L31/0216H01L31/0224H01L31/024H01L31/032H01L31/0352H01L31/18
CPCY02P70/50
Inventor 王书昶娄祎祎刘玉申丁恒胡娇燕谢超群
Owner CHANGSHU INSTITUTE OF TECHNOLOGY
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