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White light LED chip and device packaged by inorganic material, and preparation method and application of white light LED chip and device

A technology of LED chips and inorganic materials, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of many chip defects and cannot be used in practice, achieve small light decay, good thermal stability, and improve the consistency of light color. sexual effect

Pending Publication Date: 2022-04-15
FUJIAN CAS CERAMIC OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is also the problem that the chip grown on the ceramic substrate has many defects and cannot be used in practice.

Method used

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  • White light LED chip and device packaged by inorganic material, and preparation method and application of white light LED chip and device
  • White light LED chip and device packaged by inorganic material, and preparation method and application of white light LED chip and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] Step 1: growing an epitaxial structure based on a sapphire (alumina) single crystal substrate, including an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer.

[0095] Step 2: Fabricate a flip-chip wafer containing multiple LED chips on the epitaxial structure.

[0096] Step 3: Fabricate YAG:Ce, Mn-containing fluorescent transparent ceramic layer 2 and alumina ceramic bonding layer 3 with the same size as the chip wafer by casting method (see figure 1 ), the aluminum oxide transparent ceramic bonding layer and the light-emitting surface of the sapphire single crystal substrate are both Al 2 o 3 Materials, combined with the thermal bonding method of forming a covalent Al-O layer, the thermal bonding temperature is about 1300 ° C, at this time, the white LED chip is the LED chip wafer and the inorganic packaging material layer from bottom to top (see figure 2 ).

[0097] Step 4: Cutting the above-mentioned white light LED chip wafer packaged...

Embodiment 2

[0100] Step 1: Make a YAG:Ce fluorescent transparent ceramic sheet of a certain size, which is combined with a sapphire single crystal substrate by a metal bonding method of gold Au single layer, and the temperature of the metal bonding is 700°C.

[0101] Step 2: using the other side of the sapphire single crystal substrate as a substrate to grow an epitaxial structure, including a P-type epitaxial layer, an N-type epitaxial layer, and a light-emitting layer.

[0102] Step 3: On the epitaxial structure, a wafer with a flip-chip structure containing multiple LED chips is fabricated. At this time, the white LED chips are LED chip wafers and fluorescent transparent ceramic sheets from bottom to top.

[0103] Step 5: Cutting the above-mentioned white light LED chip wafer packaged with inorganic materials to form a flip-chip LED chip wafer with the required number of chips, and then package it with a conductive substrate COB to obtain a white light LED device.

[0104] The LED devi...

Embodiment 3

[0106] Step 1: growing an epitaxial structure based on a sapphire single crystal substrate, including an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer.

[0107] Step 2: Fabricate a flip-chip wafer containing multiple LED chips on the epitaxial structure.

[0108] Step 3: Make a fluorescent transparent ceramic bonding layer containing LuAG:Ce with the same size as the chip wafer, and adopt a silver-Ag single-layer metal bonding method, and the metal bonding temperature is 600°C.

[0109] Step 4: Cutting the above-mentioned white light LED chip wafer packaged with inorganic materials to form a flip-chip LED chip wafer with the required number of chips, and then package it with a conductive substrate COB to obtain a white light LED device.

[0110] The LED device of the above embodiment is tested by an integrating sphere system, and the luminous efficiency of the light source exceeds 195lm / W. Compared with the traditional flip chip disclosed in CN20...

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Abstract

The invention discloses a white light LED chip packaged by an inorganic material, a white light LED device packaged by an inorganic material, and a manufacturing method and application of the white light LED chip. The white light LED chip comprises an LED chip wafer and an inorganic material packaging layer, the white light LED chip further comprises a single crystal substrate. The LED chip wafer at least comprises a flip LED chip; the inorganic material packaging layer is used for packaging the LED chip wafer, and the inorganic material packaging layer comprises a fluorescent transparent ceramic wafer or a fluorescent crystal wafer. According to the flip LED device, the light emitting efficiency, the light color consistency and the heat dissipation performance are improved, tedious wiring arrangement is avoided, the production cost is reduced, and the flip LED device is suitable for manufacturing high-luminous-efficiency and high-power LED lamps.

Description

[0001] This application requires the applicant to submit the patent application number 202011092334.8 to the State Intellectual Property Office of China on October 13, 2020. Application priority. The entirety of said prior application is incorporated by reference into this application. technical field [0002] The invention belongs to the field of semiconductor lighting, and in particular relates to a white light LED chip packaged with an inorganic material, a device, a preparation method and an application thereof. Background technique [0003] As the fourth-generation light source, LED has excellent performances such as high luminous efficiency, energy saving and environmental protection, and long life compared with traditional light sources. It is widely used in outdoor lighting, venue lighting, indoor lighting and other fields. The traditional LED light source is Y 3 Al 5 o 12 :Ce (YAG:Ce) phosphors are packaged in organic materials such as epoxy resin or silica gel....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/56H01L25/075H01L33/00
CPCH01L33/505H01L33/62H01L25/0753H01L33/502H01L33/507H01L2933/0041H01L33/641
Inventor 张修强洪茂椿张数江周有福李春松林晓
Owner FUJIAN CAS CERAMIC OPTOELECTRONICS TECH CO LTD
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