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Transparent supercapacitor for processing MXene quantum dots based on femtosecond laser

A femtosecond laser processing and supercapacitor technology, which is applied in the manufacture of hybrid capacitor electrodes, hybrid capacitor electrolytes, and hybrid/electric double layer capacitors, etc., can solve the problems of low performance and low light transmittance of transparent supercapacitors, and achieve industrialization prospects. Good, high specific surface area, simple operation effect

Active Publication Date: 2022-04-22
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing transparent supercapacitors have low performance and low light transmittance and cannot meet the requirements, and provide a method for preparing transparent supercapacitors based on femtosecond laser processing; The femtosecond laser of electron density processes the MXene film covered with a layer of transparent gel electrolyte, and uses the plasma eruption effect to excite the MXene quantum dots to attach to the transparent gel electrolyte above, thus realizing the transparent supercapacitor of MXene quantum dots Integrated processing and patterning

Method used

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  • Transparent supercapacitor for processing MXene quantum dots based on femtosecond laser
  • Transparent supercapacitor for processing MXene quantum dots based on femtosecond laser
  • Transparent supercapacitor for processing MXene quantum dots based on femtosecond laser

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Embodiment 1

[0034] A method for preparing a transparent supercapacitor based on femtosecond laser processing, comprising the following steps:

[0035] Step 1. Use mechanical stress to imprint 0.5g of MXene nanosheets into a rectangular bulk MXene film, then transfer it to a silica substrate, and then place a piece of transparent gel electrolyte on top, the length of which is equivalent to that of the MXene film. The thickness is 0.2cm;

[0036] Step 2. Use the Michelson interferometer to emit a pulse-delayed femtosecond laser based on electronic dynamic regulation. We use a femtosecond laser with a pulse delay of 5ps, and use a continuous attenuation sheet to control the laser power to 12mw, and focus the laser on MXene on the film;

[0037] Step 3. Use the pre-programmed control program to control the patterned scanning based on the electronic dynamic regulation of the femtosecond laser. The scanning speed is 200 μm / s, which triggers the eruption of MXene plasma, and pre-deposits on the...

Embodiment 2

[0040] This embodiment is basically the same as Embodiment 1, especially in that:

[0041] In this embodiment, the pulse delay based on the femtosecond laser in step 2 is 10 ps; in step 3, the electron microscope image of the quantum dot is as follows Figure 6 As shown, the particle size is about 5nm, and the distribution is relatively uniform; in step 4, Figure 7 In order to obtain the CV curve of the supercapacitor, Figure 8 For the transparency test, Figure 9 It is a 12000 cycle life curve, and its area specific capacitance reaches 38.5mF / cm 2 , the transparency reached 90%, and after 12,000 cycles, it still maintained 95% of the capacitance retention rate.

Embodiment 3

[0043] This embodiment is basically the same as Embodiment 1, especially in that:

[0044] In this embodiment, the pulse delay of the femtosecond laser based on electronic dynamic regulation in step 2 is 1 ps; in step 3, the electron microscope image of quantum dots is as follows Figure 10 As shown, the particle size is about 10nm, and the distribution is generally uniform; in step 4, Figure 11 In order to obtain the CV curve of the supercapacitor, Figure 12 For the transparency test, Figure 13 It is a 12000 cycle life curve, and its area specific capacitance reaches 29.7mF / cm 2 , the transparency reached 87%, and after 12,000 cycles, it still maintained a capacitance retention rate of 89%.

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Abstract

The invention relates to a manufacturing method for processing a transparent supercapacitor based on femtosecond laser, and belongs to the field of nano quantum dot novel energy storage electronic devices. According to the invention, femtosecond laser with specific pulse delay is used for focusing and processing an MXene film covered with a layer of transparent gel electrolyte, and a plasma eruption effect is used for pre-depositing generated MXene quantum dots on the transparent gel electrolyte, so that a complete patterned planar or sandwich transparent supercapacitor is prepared. The prepared electrode material is novel, the preparation technology is ingenious, the complete transparent supercapacitor can be processed in situ through a one-step method, a current collector and an additional electrolyte are not needed, and meanwhile the prepared transparent supercapacitor has extremely high transparency and energy storage capacity and is good in stability and long in cycle life.

Description

technical field [0001] The invention relates to a method for manufacturing a transparent supercapacitor based on femtosecond laser processing, in particular to a method for regulating femtosecond laser processing MXene quantum dots and preparing a transparent supercapacitor, and belongs to the field of nanometer quantum dot new energy storage electronic devices. Background technique [0002] In recent years, the development trend of novel electronics has created new requirements for portable, lightweight, flexible and optically transparent devices. In order to provide energy for transparent electronic devices, the transparency, miniaturization, and flexibility of energy supply devices have become the main considerations. Supercapacitors have the advantages of fast charge / discharge, high power density, excellent rate capability, and long cycle life, making them ideal energy storage devices. However, the current transparent supercapacitors have a contradiction between transpa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/84H01G11/86H01G11/30H01G11/26H01G11/56
CPCH01G11/84H01G11/86H01G11/30H01G11/26H01G11/56Y02E60/13
Inventor 姜澜原永玖李欣马乐张学强许晨阳
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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