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Se-Cr2S3 two-dimensional material, preparation method and application

A technology of se-cr2s3 and two-dimensional materials, applied in the field of Se-Cr2S3 two-dimensional materials and preparation, can solve the problems of limitations, low hole mobility of nanosheets, long photoresponse time, etc., and achieve improved mobility and preparation methods Simple and feasible, the effect of controllable doping concentration

Pending Publication Date: 2022-05-13
湖南大学深圳研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Based on this, the purpose of the present invention is to solve the problem of ultra-thin Cr in the prior art 2 S 3 The low hole mobility and long photoresponse time of nanosheets have severely limited their development in electronics, spintronics, and optoelectronics

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  • Se-Cr2S3 two-dimensional material, preparation method and application
  • Se-Cr2S3 two-dimensional material, preparation method and application
  • Se-Cr2S3 two-dimensional material, preparation method and application

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preparation example Construction

[0057] Among them, Se-Cr 2 S 3 The preparation method of the field effect transistor comprises the following steps:

[0058] Se-Cr prepared by vapor deposition method 2 S 3 A Cr / Au electrode was vapor-deposited on the two-dimensional material, and the thickness of the Cr / Au electrode was 10 nm / 50 nm.

[0059] A kind of Se-Cr proposed by the present invention 2 S 3 The preparation method of two-dimensional materials, single-crystal Se-Cr with thickness up to a single layer was obtained by a simple atmospheric pressure chemical vapor deposition method 2 S 3 The two-dimensional material has a thickness as thin as 1.8 nm and a size of 4-30 μm. It is a single crystal, with high quality, controllable doping concentration and good reproducibility. The preparation method is simple and feasible, and is suitable for the preparation of other two-dimensional metallic materials. Reference is provided. The present invention successfully enhances Cr through Se doping 2 S 3 Mobility...

Embodiment 1

[0062] Se-Cr 2 S 3 Preparation of nanosheets:

[0063] The first porcelain boat 4 loaded with S powder and Se powder on both sides is placed in the upstream high temperature constant temperature zone 2 of the quartz tube 1 (the volatilization temperature of the S powder is preferably 200 ° C, and the volatilization temperature of the Se powder is preferably 300 ° C), Contains CrCl 3 The second porcelain boat 5 of the powder is placed in the center of the downstream high temperature constant temperature zone 3 (CrCl 3 The volatilization temperature of the powder is preferably 750 ° C), and a piece of fluorphlogopite is used as Se-Cr 2 S 3 growth substrates, in which S powder, Se powder and CrCl 3The mass ratio of the powder is 15:1:5 (0.015g / 0.001g / 0.005g);

[0064] Before heating, the air in the quartz tube 1 is exhausted by argon gas, and then the upstream high temperature constant temperature zone 2 and the downstream high temperature constant temperature zone 3 are he...

Embodiment 2

[0069] Compared with Example 1, the difference is: the substrate temperature (CrCl 3 The volatilization temperature of the powder) is 800 °C (that is, the deposition temperature is 800 °C), Se powder, S powder and CrCl 3 The mass ratio of the powder is 1:15:5 (0.001g / 0.015g / 0.005g), the corresponding flow rate is 120 / 15sccm, the deposition time is 15min, and the H 2 Access only during the isothermal phase. Image 6 for the prepared Se-Cr 2 S 3 Optical schematic diagram of nanosheet, Se-Cr 2 S 3 The thickness distribution of the nanosheets is uniform, the corresponding thickness is 10-30 nm, and the size is 10-20 μm. in, Image 6 The scale bar in is 20 μm.

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Abstract

The invention provides a Se-Cr2S3 two-dimensional material, a preparation method and application, and the preparation method comprises the following steps: dividing a cavity of a quartz tube into an upstream high-temperature constant-temperature region and a downstream high-temperature constant-temperature region according to a carrier gas flow direction; s powder and Se powder are placed in an upstream high-temperature constant-temperature area, and CrCl3 powder is placed in a downstream high-temperature constant-temperature area; before heating, shielding gas is introduced in advance to purge a chamber so as to remove impurities in the chamber of the quartz tube, and then S powder, Se powder and CrCl3 powder are heated to corresponding volatilization temperatures at the heating speed of 30 DEG C / min; and converting the protector into hydrogen-containing carrier gas Ar / H2, and controlling growth in a deposition temperature range under a preset carrier gas flow to obtain the Se-Cr2S3 two-dimensional material. The migration rate of the Cr2S3 two-dimensional material is successfully improved through Se doping, the light response time is shortened, and the magnetic performance of the Cr2S3 two-dimensional material is regulated and controlled.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a Se-Cr 2 S 3 Two-dimensional materials, preparation methods and applications. Background technique [0002] In classical semiconductor theory, doping techniques refer to the introduction of impurity atoms into materials for tuning semiconductor properties. Doping semiconductors can change their energy band structure, such as the size of the band gap, the position of the Fermi level, and further tune the corresponding electrical, optical, and magnetic properties. Since these properties are closely related to doping concentration, it is crucial to achieve controllable doping concentration in semiconductor technology. [0003] Generally, two-dimensional (2D) materials with atomic-scale thickness, including layered and non-layered materials, have exhibited unique electrical, optical, and magnetic properties. For example, superconductivity, anomalous quantum Hall effect and...

Claims

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Application Information

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IPC IPC(8): H01L29/24C23C16/30
CPCH01L29/24C23C16/305
Inventor 黎博周欣芸段曦东
Owner 湖南大学深圳研究院