Preparation method of high-purity silicon tungsten powder
A high-purity, silicon-tungsten technology, applied in the field of powder metallurgy, can solve the problems of low product purity, low reduction temperature, and high oxygen content of high-purity silicon powder, and achieve the effect of broad application market, reducing C deposition, and reducing C content
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[0025] The present invention provides a preparation method of high-purity silicon-tungsten powder, which is characterized in that, comprising the following steps:
[0026] (1) Mix the high-purity tungsten powder and the high-purity silicon powder uniformly in a three-dimensional mixer, wherein the mixing medium is high-purity silicon balls;
[0027] (2) The mixed powder is placed in a high-temperature sintering furnace for sintering, and a mixed gas of high-purity hydrogen and high-purity methane is first introduced to carry out the first sintering process, wherein the flow volume ratio of the mixed gas is H 2 :CH 4 1000:1~500:1, then turn off the methane, and pass in high-purity hydrogen to continue the second sintering process;
[0028] (3) The sintered silicon-tungsten powder is subjected to gas breaking treatment to prepare high-purity silicon-tungsten powder.
[0029] Further, in the embodiment of the present invention, the high-purity tungsten powder described in step ...
Embodiment 1
[0043] 1. The high-purity tungsten powder and the high-purity silicon powder are mixed evenly with argon gas as a protective gas in the three-dimensional mixer. Among them, the Si content is 29.7%, the mixing time is 3h, the mixing medium is high-purity silicon balls, and the ball-to-material ratio is 1:3.
[0044] 2. Put the mixed powder in a high-temperature sintering furnace for sintering, the sintering temperature is 1200 ℃, and the mixed gas of high-purity hydrogen and high-purity methane is introduced, and the gas flow ratio is H 2 :CH 4 1000:1, sintered for 2h; then turned off the methane, sintered with pure hydrogen for 1h, and passed high-purity argon to cool down after the reaction was completed.
[0045] 3. The sintered silicon-tungsten powder is subjected to gas breaking treatment to prepare high-purity silicon-tungsten powder.
[0046] 4. The Si content in the high-purity silicon-tungsten powder is 29.9%, the C content is 100ppm, and the O content is 400ppm.
Embodiment 2
[0048] 1. The high-purity tungsten powder and the high-purity silicon powder are mixed evenly with argon gas as a protective gas in the three-dimensional mixer. Among them, the Si content is 29.7%, the mixing time is 2h, the mixing medium is high-purity silicon balls, and the ball-to-material ratio is 1:2.
[0049] 2. Put the mixed powder in a high-temperature sintering furnace for sintering, the sintering temperature is 1300 ℃, and the mixed gas of high-purity hydrogen and high-purity methane is introduced, and the gas flow ratio is H 2 :CH 4 1000:1, sintered for 2 hours; then turned off the methane, sintered with pure hydrogen for 3 hours, and cooled with high-purity argon after the reaction was completed.
[0050] 3. The sintered silicon-tungsten powder is subjected to gas breaking treatment to prepare high-purity silicon-tungsten powder.
[0051] 4. The Si content in the high-purity silicon-tungsten powder is 29.7%, the C content is 60ppm, and the O content is 350ppm.
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