Supercharge Your Innovation With Domain-Expert AI Agents!

Preparation method of quantum dot material based on modified bismuth-based perovskite and electroluminescent device

A technology of electroluminescent devices and quantum dot materials, applied in the direction of electric solid devices, luminescent materials, electrical components, etc., can solve problems such as hindering applications, low photoluminescence quantum yield, and easy decomposition of polar solvents, achieving The effect of improving efficiency

Pending Publication Date: 2022-05-27
BEIJING JIAOTONG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the lead-based perovskite quantum dot material developed in recent years has good photoelectric properties, its application conditions are largely limited due to its high toxicity and easy decomposition in polar solvents. , so the lead-free Cs3Bi2Br9 quantum dot material is considered to be one of the most promising candidate materials, but its low photoluminescence quantum yield hinders its application in deep blue photoluminescent devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of quantum dot material based on modified bismuth-based perovskite and electroluminescent device
  • Preparation method of quantum dot material based on modified bismuth-based perovskite and electroluminescent device
  • Preparation method of quantum dot material based on modified bismuth-based perovskite and electroluminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this embodiment 1, a method for preparing a modified bismuth-based perovskite quantum dot material is provided, and a mixed solvent of dimethyl sulfoxide (DMSO) and octylamine is used to dissolve cesium bromide, bismuth bromide and cesium chloride. A mixture of oleic acid and ethanol is used as an anti-solvent; after adding the precursor solution to the anti-solvent, heating and stirring to cool to room temperature, centrifuging the supernatant to obtain the initial chemical formula for Cs 3 Bi 2 Br 9 The quantum dot material was washed twice with n-hexane, and finally dispersed in ethanol to obtain the modified perovskite quantum dot material. figure 1 Cs produced by the method described in Example 1 of the present invention 3 Bi 2 Br 9 The comparison diagram between the quantum dot material and JCPDS 44-0714 shows that the quantum dot material of the present invention contains the substance of the above crystal form.

[0034] The molar ratio of the cesium hal...

Embodiment 2

[0048] In order to apply the modified perovskite quantum dots to a light-emitting device, an electroluminescent device is provided in Embodiment 2, including the modified perovskite quantum dot material described in Embodiment 1.

[0049] The deep blue electroluminescence device based on the modified bismuth-based perovskite quantum dot material in this example 2 includes the modified perovskite quantum dot material. The deep blue electroluminescence device includes an ITO glass base layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode modification layer, and a metal cathode layer in sequence from inside to outside.

[0050] The ITO glass base layer is used as the substrate and anode of the electroluminescent device, and the material is indium tin oxide conductive glass, and the hole injection layer is polyethylene dioxythiophene: polystyrene sulfonic acid (PEDOT: PSS) , the hole transport layer is polyvinylcarba...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method based on a modified bismuth-based perovskite quantum dot material and an electroluminescent device, and belongs to the technical field of electroluminescent devices.The preparation method comprises the steps that a mixed solvent of dimethyl sulfoxide and octylamine is adopted as a precursor solution for dissolving cesium bromide, bismuth bromide and cesium chloride, and amine is adopted as a ligand; a mixed solvent of oleic acid and ethanol is used as an anti-solvent; and adding the precursor solution into an anti-solvent, heating, stirring, cooling to room temperature, centrifuging, taking supernate, washing with n-hexane, and finally dispersing into ethanol to obtain the modified bismuth-based perovskite quantum dot material. According to the method, a proper amount of cesium chloride is added into a solution of synthesized perovskite quantum dots, the perovskite quantum dots passivated by chlorine elements are obtained, surface defects of the quantum dots are passivated by introducing a proper amount of chloride ions, the stability of the perovskite quantum dots is effectively improved, and the fluorescence yield is greatly improved; the dark blue light electroluminescent device based on the bismuth-based perovskite as the luminescent material is obtained for the first time.

Description

technical field [0001] The invention relates to the technical field of electroluminescence devices, in particular to a preparation method and an electroluminescence device based on a modified bismuth-based perovskite quantum dot material. Background technique [0002] Quantum dot materials are widely used in the fields of display and lighting due to their tunable light-emitting wavelength, high quantum yield and stability, simple synthesis method, and convenience for the preparation of light-emitting devices by solution method. research focus. Active light-emitting electroluminescent diode technology using quantum dots as light-emitting materials is one of the important applications of quantum dot materials. This technology is hailed by the industry as the second best technology after organic light-emitting diode technology due to its wide color gamut coverage, high stability and high luminous efficiency. Next-generation display technology. Among them, the research of deep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/74C09K11/02B82Y20/00B82Y40/00H01L51/50H01L51/54
CPCC09K11/7435C09K11/025B82Y20/00B82Y40/00H10K50/115Y02B20/00
Inventor 张伟乔泊宋丹丹赵谡玲徐征胡易
Owner BEIJING JIAOTONG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More