Preparation method of quantum dot material based on modified bismuth-based perovskite and electroluminescent device
A technology of electroluminescent devices and quantum dot materials, applied in the direction of electric solid devices, luminescent materials, electrical components, etc., can solve problems such as hindering applications, low photoluminescence quantum yield, and easy decomposition of polar solvents, achieving The effect of improving efficiency
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Embodiment 1
[0033] In this embodiment 1, a method for preparing a modified bismuth-based perovskite quantum dot material is provided, and a mixed solvent of dimethyl sulfoxide (DMSO) and octylamine is used to dissolve cesium bromide, bismuth bromide and cesium chloride. A mixture of oleic acid and ethanol is used as an anti-solvent; after adding the precursor solution to the anti-solvent, heating and stirring to cool to room temperature, centrifuging the supernatant to obtain the initial chemical formula for Cs 3 Bi 2 Br 9 The quantum dot material was washed twice with n-hexane, and finally dispersed in ethanol to obtain the modified perovskite quantum dot material. figure 1 Cs produced by the method described in Example 1 of the present invention 3 Bi 2 Br 9 The comparison diagram between the quantum dot material and JCPDS 44-0714 shows that the quantum dot material of the present invention contains the substance of the above crystal form.
[0034] The molar ratio of the cesium hal...
Embodiment 2
[0048] In order to apply the modified perovskite quantum dots to a light-emitting device, an electroluminescent device is provided in Embodiment 2, including the modified perovskite quantum dot material described in Embodiment 1.
[0049] The deep blue electroluminescence device based on the modified bismuth-based perovskite quantum dot material in this example 2 includes the modified perovskite quantum dot material. The deep blue electroluminescence device includes an ITO glass base layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode modification layer, and a metal cathode layer in sequence from inside to outside.
[0050] The ITO glass base layer is used as the substrate and anode of the electroluminescent device, and the material is indium tin oxide conductive glass, and the hole injection layer is polyethylene dioxythiophene: polystyrene sulfonic acid (PEDOT: PSS) , the hole transport layer is polyvinylcarba...
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Abstract
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