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LED epitaxial wafer, epitaxial growth method and LED chip

An LED epitaxial wafer and epitaxial growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as crystal defects and lattice mismatch, reduce contact resistance, reduce lattice mismatch, guarantee The effect of crystal quality

Pending Publication Date: 2022-05-27
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, the object of the present invention is to provide an LED epitaxial wafer, an epitaxial growth method, and an LED chip, aiming at solving the problem of reducing contact resistance by doping Mg in the P-type contact layer in the prior art, but causing crystal defects or crystal defects. case mismatch problem

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  • LED epitaxial wafer, epitaxial growth method and LED chip
  • LED epitaxial wafer, epitaxial growth method and LED chip

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Embodiment 1

[0029] see figure 1 , shows the LED epitaxial wafer in the first embodiment of the present invention, including a sapphire substrate 10, a buffer layer 20 epitaxially grown on the sapphire substrate 10 in sequence, an unintentionally doped GaN layer 30, an N-type GaN layer 40, The multiple quantum well layer 50 , the electron blocking layer 60 , the P-type GaN layer 70 and the P-type contact layer 80 .

[0030] In this embodiment, the P-type contact layer 80 is a high-concentration Mg-doped layer, but the example is not limited. 4nm, 6nm, etc.; the thickness of the buffer layer 20 is 10nm-30nm, such as 12nm, 14nm, 16nm, etc.; the thickness of the unintentionally doped GaN layer 30 is 2um-3um, such as 2.2um, 2.4um, 2.6um, etc.; The thickness of the N-type GaN layer 40 is 2um-3um, such as 2.2um, 2.4um, 2.6um, etc.; the thickness of the multiple quantum well layer 50 is 11nm-15.5nm, such as 12nm, 13nm, 14nm, etc.; the electron blocking layer 60 The thickness of the P-type GaN l...

Embodiment 2

[0033] see figure 2 , shows an epitaxial growth method of an LED epitaxial wafer proposed in the second embodiment of the present invention, which is used to prepare the LED epitaxial wafer in the above-mentioned first embodiment. The method specifically includes steps S201 to S209, wherein:

[0034] Step S201, providing a sapphire substrate required for growth.

[0035] In step S202, a buffer layer is grown, and the growth thickness thereof is 10 nm˜30 nm.

[0036] It should be noted that the material of the buffer layer may be AlN or GaN. In this embodiment, the AlN buffer layer is deposited in PVD, the applied material, with a thickness of 15 nm.

[0037] Step S203 , growing an unintentionally doped GaN layer with a growth thickness of 2um˜3um.

[0038] Specifically, the substrate is a sapphire substrate coated with an AlN buffer layer, which is placed on a graphite tray and sent into a reaction chamber to grow epitaxial materials. The unintentionally doped GaN layer is...

Embodiment 3

[0055] The third embodiment of the present invention provides an LED chip, including the LED epitaxial wafer in the first embodiment. The LED epitaxial wafer can be epitaxially grown by the epitaxial growth method of the LED epitaxial wafer in the second embodiment.

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Abstract

The invention provides an LED epitaxial wafer, an epitaxial growth method and an LED chip, and the epitaxial growth method comprises the steps: controlling the growth temperature to be gradually reduced from a high temperature to a low temperature during the growth of a P-type contact layer, doping Mg, controlling the Mg introduction concentration to be higher than the Mg concentration of a P-type GaN layer, and enabling the Mg introduction concentration to be gradually increased along with the reduction of the growth temperature, the Mg-doped GaN layer with high crystal quality can be obtained by growing the Mg-doped GaN layer at a high temperature, meanwhile, Mg is easily doped into the GaN layer at a high temperature, but the Mg doping efficiency is greatly reduced at a low temperature, the problem of low doping concentration of Mg at a low temperature can be improved by increasing the concentration of introduced Mg at a low temperature, and due to the fact that Mg is gradually merged in the cooling process from the high temperature to the low temperature, the doping efficiency is greatly improved. The lattice mismatch of the Mg-doped GaN layer is effectively reduced, so that the contact resistance of the P-type contact layer is reduced, and the crystal quality is ensured.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED epitaxial wafer, an epitaxial growth method and an LED chip. Background technique [0002] It is well known that GaN-based compound semiconductor materials are typical third-generation wide-bandgap semiconductor materials. GaN-based semiconductors can change the band gap from 0.7eV to 6.2eV by adjusting the composition of group III atoms (In, Al, Ga), so GaN-based materials have been widely used in various optoelectronic devices. [0003] The working voltage of GaN-based light-emitting diodes includes theoretical calculation voltage, contact resistance and bulk resistance of materials. It can be seen that by reducing the contact resistance of the LED, the LED voltage can be reduced. Usually, GaN-based light-emitting diodes are connected to metal. When the doping concentration of the semiconductor contact layer is very high, the carriers can pass through the potential barrier...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00C30B25/16C30B25/18C30B29/40H01L33/06H01L33/14
CPCH01L33/007H01L33/06H01L33/145C30B29/406C30B25/16C30B25/183
Inventor 程龙印从飞刘春杨胡加辉
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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