Cleaning liquid composition used in silicon carbide semiconductor manufacturing process

A technology of cleaning solution and composition, applied in the direction of detergent composition, non-surface active detergent composition, inorganic non-surface active cleaning composition, etc., which can solve the problems of pollution and residue, and achieve the effect of simple raw material components

Pending Publication Date: 2022-06-03
ZHANGJIAGANG ANCHU TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Potassium permanganate and its degradation products are usually mixed with grinding ions, resulting in residues and contamination of potassium per

Method used

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  • Cleaning liquid composition used in silicon carbide semiconductor manufacturing process
  • Cleaning liquid composition used in silicon carbide semiconductor manufacturing process
  • Cleaning liquid composition used in silicon carbide semiconductor manufacturing process

Examples

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Example Embodiment

[0024] The technical solutions of the present invention will be further elaborated below with reference to the accompanying drawings and specific embodiments.

[0025] The reagents and raw materials used in the present invention are all commercially available.

[0026] 1. Dissolution time test of manganese dioxide by different cleaning solutions

[0027] Table 1 is the distribution ratio of each component in the embodiment of the present invention. According to the formula in the table, each component is uniformly mixed at room temperature, and then shaken and filtered to make the mixing more uniform. In the cleaning liquid composition, each component The sum of the mass fractions is 100%, and the amount of deionized water is calculated as 100% of the sum of the mass fractions of the subsidized components.

[0028] Table 1 Dissolution time of manganese dioxide in different cleaning solutions

[0029]

[0030]

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Abstract

The invention discloses a cleaning fluid composition used in a silicon carbide semiconductor manufacturing process, which comprises hydroxylamine and/or salt and/or derivative thereof, organic acid and/or organic acid salt, deionized water, a solvent and a solvent. The cleaning fluid composition comprises the following components in percentage by mass: 0.1-30wt% of hydroxylamine and/or salt and/or derivative thereof, 0.05-20wt% of organic acid and/or organic acid salt and the balance of deionized water, and the pH value of the cleaning fluid composition is less than 7. The cleaning solution composition is simple in raw material component, can effectively remove pollutants, trace metal ions and grinding particles remaining on the surface of equipment, the surface of a grinding pad and the surface of a SiC wafer, and does not corrode the contact surface.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning liquid composition used in a silicon carbide semiconductor manufacturing process. Background technique [0002] Silicon carbide (SiC) has excellent physical and chemical properties such as high thermal conductivity, high breakdown field strength, large forbidden band width, high electron saturation drift rate, and high temperature resistance, radiation resistance and chemical stability, making it an excellent choice for preparation power. Third-generation semiconductor materials for semiconductor devices. [0003] SiC material has the characteristics of high hardness (Mohs hardness of 9.2) and very stable chemical and physical properties. The ultra-precision machining technology of silicon carbide is still the focus and difficulty of current research. In the ultra-precision machining of SiC materials, the chemical mechanical polishing (CMP) method...

Claims

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Application Information

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IPC IPC(8): C11D7/06C11D7/04C11D7/10C11D7/26C11D7/32C11D7/34C11D7/60
CPCC11D7/105C11D7/10C11D7/04C11D7/06C11D7/32C11D7/265C11D7/34C11D7/3272C11D7/3281
Inventor 孙秀岩金徽
Owner ZHANGJIAGANG ANCHU TECH CO LTD
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