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Inverted deep ultraviolet LED chip capable of increasing p-side reflection emergent light and manufacturing method of inverted deep ultraviolet LED chip

A technology of LED chips and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of deterioration of electrical performance of deep ultraviolet LEDs, achieve the effects of improving light extraction efficiency, enhancing reflectivity, and reducing defects

Pending Publication Date: 2022-06-07
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Etching part of p-GaN can reduce the absorption of ultraviolet light, but the defects introduced during the etching process will lead to the deterioration of the electrical performance of deep ultraviolet LED

Method used

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  • Inverted deep ultraviolet LED chip capable of increasing p-side reflection emergent light and manufacturing method of inverted deep ultraviolet LED chip
  • Inverted deep ultraviolet LED chip capable of increasing p-side reflection emergent light and manufacturing method of inverted deep ultraviolet LED chip
  • Inverted deep ultraviolet LED chip capable of increasing p-side reflection emergent light and manufacturing method of inverted deep ultraviolet LED chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] see Figure 1j , a flip-chip deep ultraviolet LED chip with increased p-side reflected light, its light-emitting part includes an epitaxial layer, a passivation layer 109, a p-electrode and an n-electrode that are sequentially stacked on the substrate 100, and the surface of the epitaxial layer includes A p-region, an n-region, and a second-order stepped structure, the second-order stepped structure is disposed between the p-region and the n-region and serves as a boundary between the p-region and the n-region;

[0077] The epitaxial layer corresponding to the p region includes an AlN buffer layer 101 , an n-A1GaN layer 102 , a quantum well layer 103 , a p-AlGaN layer 104 and a secondary grown p-GaN layer 106 , which are sequentially stacked on the substrate 100 . , the p-GaN layer 106 does not completely cover the p-AlGaN layer 104 below it, and the epitaxial layer corresponding to the n region includes an AlN buffer layer 101 and an n-AlGaN layer 102 stacked on the su...

Embodiment 2

[0096] see Figure 2j , a flip-chip deep ultraviolet LED chip with increased p-side reflected light, its light-emitting part includes an epitaxial layer, a passivation layer 209, a p-electrode and an n-electrode whose bottom layer is sequentially arranged on the substrate 200, and the surface of the epitaxial layer includes p a region, an n-region, and a second-order stepped structure, the second-order stepped structure being disposed between the p-region and the n-region and serving as a boundary between the p-region and the n-region;

[0097] The epitaxial layer corresponding to the p region includes an AlN buffer layer 201 , an n-AlGaN layer 202 , a quantum well layer 203 , a p-AlGaN layer 204 and a secondary grown p-GaN layer 206 , which are sequentially stacked on the substrate 200 . , the p-GaN layer 206 does not completely cover the p-AlGaN layer 204 below it, and the epitaxial layer corresponding to the n region includes an AlN buffer layer 202 and an n-AlGaN layer 202...

Embodiment 3

[0116] The structure and manufacturing method of a flip-chip deep ultraviolet LED chip with increased p-side reflected light in this embodiment 3 are basically the same as the device structure and manufacturing method in The chemical layer 109 is SiO grown by plasma enhanced chemical vapor deposition, atomic layer deposition or electron beam evaporation. 2 or Si 3 N 4 or Al 2 O 3 The passivation layer, corresponding to the passivation layer 309 in Example 3, is PI or SU-8 with a thickness of 4-6 μm formed by spin coating or spray coating and thermal curing.

[0117] The difference between a flip-chip deep ultraviolet LED chip manufacturing method that increases the p-side reflected light in Embodiment 3 and Embodiment 1 is only that the method of step S9 is different, and the details are as follows:

[0118] Step S9: coating the surfaces of the metal reflective electrode 108, the p-AlGaN layer 104, the n-AlGaN layer 102 and the n-type ohmic contact electrode 105 by means o...

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Abstract

The invention discloses an inverted deep ultraviolet LED (light-emitting diode) chip capable of increasing p-side reflection emergent light and a manufacturing method of the inverted deep ultraviolet LED chip. The inverted deep ultraviolet LED chip comprises an epitaxial layer, a first contact layer, a second contact layer and a first metal reflection electrode, the epitaxial layer comprises an n-type semiconductor layer, an active layer, a first p-type semiconductor layer and a second p-type semiconductor layer which are sequentially arranged in a laminated mode, and part of the surface area of the first p-type semiconductor layer is covered with the second p-type semiconductor layer. The second contact layer is electrically contacted with the second p-type semiconductor layer, and the first contact layer is electrically contacted with the n-type semiconductor layer; and the first metal reflection electrode covers the first p-type semiconductor layer, the second p-type semiconductor layer and the second contact layer. According to the flip deep ultraviolet LED chip, the first p-type semiconductor layer and the second p-type semiconductor layer are covered with the high-reflection first metal reflection electrodes to increase p-side reflection emergent light, and the flip deep ultraviolet LED chip has high light emitting efficiency.

Description

technical field [0001] The invention relates to a deep-ultraviolet LED chip, in particular to a flip-chip deep-ultraviolet LED chip with increased p-side reflected light and a manufacturing method thereof, belonging to the technical field of semiconductors. Background technique [0002] Solid-state lighting has attracted the attention of researchers because of its high efficiency, energy saving, environmental protection and other advantages, and has been greatly developed in the commercial field. Since the epidemic, deep ultraviolet light has been used as an effective means of public health disinfection due to its high efficiency in inactivating viruses. Deep UV LEDs have the advantages of being environmentally friendly and portable, and have great potential to replace traditional mercury lamps. However, the internal quantum efficiency, external quantum efficiency, and WPE of deep ultraviolet LEDs are still low, which greatly affects their commercial applications. As the A...

Claims

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Application Information

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IPC IPC(8): H01L33/40H01L33/24H01L33/32H01L33/06H01L33/00
CPCH01L33/405H01L33/24H01L33/32H01L33/06H01L33/0075
Inventor 周玉刚潘赛许朝军谢自力刘斌张荣
Owner NANJING UNIV
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