High-entropy alloy film on surface of bore of barrel and preparation method of high-entropy alloy film
A high-entropy alloy, barrel technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of low thermal conductivity, ablation resistance and wear resistance need to be improved, etc. The effect of low thermal conductivity, avoiding thermal stress cracks and improving service life
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[0028] The invention discloses a method for preparing a high-entropy alloy thin film on the surface of the inner bore of a barrel, comprising the following steps: ultrasonic cleaning and plasma cleaning are performed on a substrate in the inner bore of a barrel in sequence; a plasma sputtering method is adopted, and a WMoTaNb target is used for plasma cleaning. The WMoTaNb layer was deposited on the surface of the substrate in the inner bore of the barrel; the WMoTaNbSi gradient transition layer was deposited on the WMoTaNb layer based on the WMoTaNb target and the Si target by the plasma sputtering method; the power of the Si target during the deposition process was increased from 0W to the power threshold within the time threshold ; Using the plasma sputtering method, the WMoTaNbSi layer was deposited on the WMoTaNbSi gradient transition layer based on the WMoTaNb target and the Si target to obtain a high-entropy alloy thin film; the power of the Si target during the depositio...
Embodiment 1
[0038] This embodiment provides a method for preparing a refractory high-entropy alloy thin film that is resistant to ablation and wear. The thin film is composed of a WMoTaNb layer, a gradient transition layer and a WMoTaNbSi layer, and the film thickness is 5 μm. The specific preparation method is as follows:
[0039] (1) Sample pretreatment: Put the high-speed steel substrate into acetone for ultrasonic cleaning for 5 minutes, and then ultrasonically clean it with deionized water twice for 3 minutes each time. Finally, put the silicon wafer and the high-speed steel substrate into anhydrous ethanol for ultrasonic cleaning. Wash 2 times, 3min each time, dry for use.
[0040] (2) Preparation of thin film deposition: The cleaned silicon wafer and high-speed steel substrate are sent into a vacuum chamber equipped with WMoTaNb target and Si target. The WMoTaNb target is connected to the RF power supply, the Si target is connected to the DC power supply, and the target base distan...
Embodiment 2
[0047] This embodiment provides a method for preparing a refractory high-entropy alloy thin film that is resistant to ablation and wear. The thin film is composed of a WMoTaNb layer, a gradient transition layer and a WMoTaNbSi layer, and the film thickness is 3.5 μm. The specific preparation method is as follows:
[0048] (1) Sample pretreatment: put the high-speed steel substrate into acetone for ultrasonic cleaning for 5 minutes, then ultrasonically clean it with deionized water for 2 times, each cleaning for 3 minutes, and finally put the silicon wafer and the high-speed steel substrate into anhydrous ethanol for ultrasonic cleaning. Wash 2 times, 3min each time, dry for use.
[0049] (2) Preparation of thin film deposition: The cleaned silicon wafer and high-speed steel substrate are sent into a vacuum chamber equipped with WMoTaNb target and Si target. The WMoTaNb target is connected to the RF power supply, the Si target is connected to the DC power supply, and the target...
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