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Aluminum nitride single crystal composite substrate and preparation method, application and stress and/or polarization control method thereof

A composite substrate and aluminum nitride technology, which is applied in the semiconductor field, can solve the problems of inability to control the stress state of the substrate, high cost, and high quality repeatability requirements.

Active Publication Date: 2022-07-08
SONGSHAN LAKE MATERIALS LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004]However, these methods are complex in process, expensive in cost, high in quality repeatability requirements, and cannot control the stress state of the substrate at the same time

Method used

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  • Aluminum nitride single crystal composite substrate and preparation method, application and stress and/or polarization control method thereof
  • Aluminum nitride single crystal composite substrate and preparation method, application and stress and/or polarization control method thereof
  • Aluminum nitride single crystal composite substrate and preparation method, application and stress and/or polarization control method thereof

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Experimental program
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Effect test

Embodiment 1

[0083] Nano-patterns were prepared on the surface of single-crystal aluminum nitride substrate by Ar ion low-energy irradiation, and then AlN epitaxial thin film was grown by MOCVD on the substrate to obtain a high-quality aluminum nitride single-crystal composite substrate template with tensile stress.

[0084] The manufacturing method of the stress-adjustable high-quality aluminum nitride template of the present embodiment includes the following steps:

[0085]1) Select a c-plane aluminum polar AlN single crystal substrate with a thickness of 600 μm. Perform chemical ultrasonic cleaning with acetone as the cleaning solution for 10 minutes, and use nitrogen to dry the surface to remove organic and non-polar contamination on the surface, so that the surface is clean, such as figure 1 shown. exist figure 1 , the structure includes an aluminum nitride homogenous substrate 1 and an AlN single crystal 2 .

[0086] 2) annealing the cleaned single crystal aluminum nitride templat...

Embodiment 2

[0091] In this embodiment, a nano-pattern is prepared on the surface of an aluminum nitride single crystal composite substrate template on a sapphire substrate by low-energy irradiation of Ne ions, and then an AlN epitaxial film is grown on the sapphire substrate using MOCVD as a substrate to re-grow an AlN epitaxial film with tensile stress. Aluminum nitride single crystal composite substrate template on sapphire substrate.

[0092] The manufacturing method of the stress-adjustable high-quality aluminum nitride template of the present embodiment includes the following steps:

[0093] 1) Select a high-temperature annealed AlN single crystal template with c-plane sapphire as the substrate, and perform chemical ultrasonic cleaning with acetone as a cleaning solution for 10 minutes, and use nitrogen to dry the surface to remove the surface organic and its non-polar contamination, so that the surface is clean.

[0094] 2) Use high-temperature annealing to anneal the high-temperatu...

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Abstract

The invention discloses an aluminum nitride single-crystal composite substrate and a preparation method, application and a stress and / or polarization control method thereof, and belongs to the field of semiconductors. The method for preparing the aluminum nitride single-crystal composite substrate comprises the following steps: providing a single-crystal first aluminum nitride film; performing low-energy ion irradiation on the first aluminum nitride film so as to form a nano-structure at least composed of a nitrogen element and / or an aluminum element from the first aluminum nitride film on the surface of the first aluminum nitride film; and growing a single-crystal second aluminum nitride film on the surface of the nano structure. According to the method, the stress of the AlN can be effectively controlled, so that the use performance of the AlN is improved.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, to an aluminum nitride single crystal composite substrate and a method for its preparation, application, stress and / or polarization control. Background technique [0002] Wide-bandgap semiconductor materials represented by aluminum nitride (AlN) are the core materials for the preparation of solid-state ultraviolet (UV) and deep ultraviolet optoelectronic devices. At the same time, AlN-based materials also have unique advantages in high-frequency, high-power power electronic devices. [0003] At present, the methods for preparing aluminum nitride substrates mainly include: patterned substrate method and silicon doping method. The superlattice transition layer method has been introduced. It is necessary to prepare a thicker transition layer to reduce the dislocation density and improve the crystal quality. the goal of. [0004] However, these methods are complex, expensi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/04C30B29/40C30B25/18H01L33/02H01L33/12
CPCC30B33/04C30B29/403C30B25/183H01L33/02H01L33/12Y02P70/50
Inventor 王新强王钇心袁冶刘上锋康俊杰罗巍
Owner SONGSHAN LAKE MATERIALS LAB
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