Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of lanthanum manganese oxide/strontium iridate heterojunction film

A thin film preparation, strontium iridate technology, applied in semiconductor/solid-state device manufacturing, vacuum evaporation coating, coating and other directions, can solve the difficulty of preparing lanthanum manganese oxide/strontium iridate heterojunction, cumbersome and uncontrollable magnetic regulation, etc. problem, to achieve the effect of fast and effective preparation, low production cost and high stability

Pending Publication Date: 2022-07-08
NANJING UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems in the prior art that the preparation of lanthanum manganese oxide / strontium iridate heterojunction is difficult and the magnetic regulation of the lanthanum manganese oxide / strontium iridate interface is cumbersome and uncontrollable, the present invention provides a preparation of lanthanum manganese oxide / strontium iridate thin film method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of lanthanum manganese oxide/strontium iridate heterojunction film
  • Preparation method of lanthanum manganese oxide/strontium iridate heterojunction film
  • Preparation method of lanthanum manganese oxide/strontium iridate heterojunction film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to further understand the content of the present invention, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

[0028] figure 1 This is a flow chart of the method of the present invention. The preparation process is: pretreating the strontium titanate substrate. The method adopted in this embodiment is as follows: first, at room temperature, the strontium titanate substrate is separately dissolved in acetone and anhydrous ethanol. After ultrasonic cleaning for 5 min, the strontium titanate substrates were ultrasonically cleaned in deionized water and aqua regia for 20 min at 70 °C, respectively. Finally, the treated substrates were annealed at 1000 °C for 2 h in an oxygen atmosphere. Prepare lanthanum manganese oxide and strontium iridate targets respectively, and place the targets in a vacuum chamber for later use.

[0029] Then put the processed substrate into the vacuum chamber, and set t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a lanthanum manganese oxide / strontium iridate heterojunction thin film, the lanthanum manganese oxide / strontium iridate heterojunction is prepared by adopting a pulse laser deposition method, a pretreated substrate is put into a vacuum chamber to be heated to a certain temperature, and under a certain oxygen pressure condition, the lanthanum manganese oxide / strontium iridate heterojunction thin film is prepared by adopting the pulse laser deposition method. A plasma plume deposition sample generated by bombarding a target material through pulse laser is used, firstly, a strontium iridate film is deposited, in-situ annealing is carried out after deposition is finished, then, a lanthanum manganese oxide film continues to be deposited through the same steps under the same condition, and finally, after in-situ annealing is carried out, the temperature is reduced to the room temperature. The preparation method of the lanthanum manganese oxide / strontium iridate heterojunction is simple and rapid, the prepared lanthanum manganese oxide / strontium iridate heterojunction film has obvious interface magnetism, the interface magnetism of the heterojunction can be effectively regulated and controlled by adjusting the thickness of lanthanum manganese oxide in the heterojunction, and the lanthanum manganese oxide / strontium iridate heterojunction film has wide application prospects in the field of spin electronic devices.

Description

technical field [0001] The invention discloses a method for preparing a lanthanum manganese oxide / strontium iridate heterojunction thin film, which belongs to the technical field of electronic materials. Background technique [0002] The vigorous development of the electronic industry has made people's requirements for the performance of electronic devices higher and higher. As the function improvement of traditional semiconductor devices becomes more and more difficult, it is urgent to find a new material system. Transition metal oxides are considered to have broad application scenarios due to their multi-dimensional interactions, which can produce abundant bulk and interface effects. [0003] Strontium iridate has a highly tunable electronic and magnetic ground state. Although it is a paramagnetic semimetal, it is not only at the boundary of the magnetic state transition, but also close to the metal-insulator transition, making the ground state of strontium iridate easily ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/363C23C14/08C23C14/28
CPCH01L29/66969H01L21/02414H01L21/02565H01L21/02631H01L21/02664C23C14/28C23C14/08Y02E60/36
Inventor 王学锋朱长征刘汝新张旭张荣
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com