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Thulium and dysprosium co-doped bromide mid-infrared laser crystal as well as preparation method and application thereof

A technology of infrared lasers and laser crystals, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of immature development of LD pump sources, poor stability, complex systems, etc., and achieve the suppression of laser self-termination bottlenecks effect, the effect of improving energy utilization efficiency

Pending Publication Date: 2022-07-22
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mid-infrared laser source in this system is limited by the following two bottlenecks: (1) Dy 3+ Ionic 6 h 11 / 2 → 6 h 13 / 2 The transition lacks a suitable diode laser (LD) pump source and requires 1.3 micron Nd 3+ Laser or 1.7 micron Er 3+ Laser pumping, complex system and poor stability; (2) The lifetime of the lower energy level is too long, the laser threshold is high, and it is easy to self-terminate
[0004] At present, the development of commercial LD ​​pump sources for dysprosium-activated laser crystals is immature, and the existing 1.3 micron Nd 3+ Laser or 1.7 micron Er 3+ The pumping scheme system of lasers is relatively complicated, so it is of great significance to find laser materials in the 4-5 micron band that can be directly pumped by LD

Method used

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  • Thulium and dysprosium co-doped bromide mid-infrared laser crystal as well as preparation method and application thereof
  • Thulium and dysprosium co-doped bromide mid-infrared laser crystal as well as preparation method and application thereof
  • Thulium and dysprosium co-doped bromide mid-infrared laser crystal as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The metal element selects K element, selects x=0.01, y=0.001, and uses the crucible descending method to grow K (Tm 0.01 Dy 0.001 Pb 0.989 ) 2 Br 5 crystal. High-purity (5N) PbBr in a glove box 2 , KBr, DyBr 3 , TmBr 3 According to K(Tm 0.01 Dy 0.001 Pb 0.989 ) 2 Br 5 Molecular formula prepare 20g raw materials, mix them evenly and put them into a quartz crucible. Take out the quartz crucible containing the prepared raw materials from the glove box, evacuate it, and seal it with oxyhydrogen flame welding. Polycrystalline feedstocks were synthesized by sintering at 300°C for 10 hours. The quartz crucible containing the polycrystalline material was placed in the crucible descending method growth equipment to heat up to 390 °C, and the temperature was kept constant for 2 hours, and then the crystal growth was completed at a descending speed of 0.5 mm / h. Finally, after 5 hours, it was cooled to room temperature to obtain K (Tm 0.01 Dy 0.001 Pb 0.989 ) 2 Br...

Embodiment 2

[0024] The metal element selects Rb element, selects x=0.1, y=0.05, and uses the crucible descending method to grow Rb (Tm 0.1 Dy 0.05 Pb 0.85 ) 2 Br 5 crystal. High-purity (5N) PbBr in a glove box 2 , RbBr, DyBr 3 , TmBr 3 According to Rb(Tm 0.1 Dy 0.05 Pb 0.85 ) 2 Br 5 Molecular formula prepare 25g of raw materials, mix them evenly and put them into a quartz crucible. Take out the quartz crucible containing the prepared raw materials from the glove box, evacuate it, and seal it with oxyhydrogen flame welding. The polycrystalline starting material was synthesized by sintering at a temperature of 330°C for 8 hours. The quartz crucible containing the polycrystalline material was placed in the crucible descending furnace to heat up to 390°C, and the temperature was kept constant for 2 hours. Then, crystal growth was completed at a descending speed of 0.8 mm / h thereafter. Finally, after 5 hours, it was lowered to room temperature to obtain Rb(Tm 0.1 Dy 0.05 Pb 0...

Embodiment 3

[0026] The metal element selects Tl element, selects x=0.05, y=0.02, and uses the crucible descending method to grow Tl (Tm 0.05 Dy 0.02 Pb 0.93 ) 2 Br 5 crystal. The laser crystal growth, sample preparation and performance testing conditions are all used in Example 1, the difference is that the polycrystalline sintering temperature is 350 °C, the constant temperature time is 5 hours, and the crucible falling rate is 0.2 mm / h. A 793nm laser diode-pumped crystal was used to obtain a 4.3-micron band CW laser output.

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Abstract

The invention discloses a thulium-dysprosium co-doped low-phonon energy bromide laser crystal for a 4-5 micron all-solid-state laser and a preparation method of the thulium-dysprosium co-doped low-phonon energy bromide laser crystal, and relates to the field of mid-infrared laser materials and devices. The molecular formula of the crystal is M (TmxDyyPb1-x-y) 2Br5, M is metal elements K, Rb and Tl, x is larger than or equal to 0.01 and smaller than or equal to 0.1, and y is larger than or equal to 0.001 and smaller than or equal to 0.05. In the laser crystal, thulium ions serve as sensitized ions, absorb energy of a near-infrared band commercial semiconductor laser and transmit the energy to dysprosium ions. The dysprosium ions are used as active ions, and efficient laser output of the wave band of 4-5 microns is obtained through transition from Dy < 3 + >: 6H11 / 2 to 6H13 / 2. The M (TmxDyyPb1-x-y) 2Br5 crystal with low phonon energy has excellent laser characteristics, can be directly pumped through a commercial LD, and can promote the miniaturization development of a dysprosium-activated intermediate infrared laser.

Description

technical field [0001] The invention relates to the field of laser materials, in particular to a class of thulium-dysprosium co-doped bromide laser crystals with low phonon energy for 4-5 micron all-solid-state lasers and a preparation method thereof. The molecular formula of the thulium-dysprosium co-doped bromide laser crystals is M ( Tm x Dy y Pb 1-x-y ) 2 Br 5 , where M is the metal element K, Rb, Tl, the value range of x is: 0.01≤x≤0.1, and the value range of y is: 0.001≤y≤0.05. Background technique [0002] The 4-5 micron laser is located in the atmospheric window and corresponds to the vibrational absorption lines of various molecules. It is widely used in the fields of photoelectric countermeasures, laser medical treatment, environmental monitoring and nonlinear spectroscopy. The main ways to generate the mid-infrared laser in this band are: (1) through the frequency doubling and frequency difference output of the carbon dioxide laser, the working material of th...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B11/02H01S3/16
CPCC30B29/12C30B11/02H01S3/1606H01S3/1616H01S3/1645
Inventor 李善明杭寅何明珠蔡双赵呈春陶斯亮
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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