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Polyimide with high bonding strength as well as preparation method and application thereof

A polyimide, bonding strength technology, applied in the direction of adhesives, circuits, electrical solid devices, etc., can solve the problem of increasing the dielectric constant and dielectric loss tangent, hindering high-frequency transportation, increasing polyimide and copper Adhesive strength and other issues to achieve the effect of improving other properties, high selectivity, and enhancing adhesive strength

Pending Publication Date: 2022-07-29
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Roughening the copper surface will cause skin effect, and the signal transmission will be concentrated on the thin layer of conductor copper surface. In order to reduce the loss of high-speed and high-frequency signal transmission, the roughness of copper must be below 0.1 μm. As for the inability to increase the bond strength between polyimide and copper by roughening copper
The use of adhesion aids can improve the bonding strength between polyimide and copper metal layer, but it will increase the dielectric constant and dielectric loss tangent of the system, hindering high-frequency transportation

Method used

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  • Polyimide with high bonding strength as well as preparation method and application thereof
  • Polyimide with high bonding strength as well as preparation method and application thereof
  • Polyimide with high bonding strength as well as preparation method and application thereof

Examples

Experimental program
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preparation example Construction

[0039]Wherein, described preparation method (1) comprises the following steps:

[0040] Step S11, synthesizing polyamic acid: dissolving diamine in a polar organic solvent and then adding dianhydride to synthesize a first polyamic acid solution.

[0041] Step S12, grafting polyamic acid: adding a grafting compound to the first polyamic acid solution to carry out a grafting reaction to obtain a second polyamic acid solution.

[0042] Step S13, imidization reaction: thermal imidization of the second polyamic acid solution to obtain a polyimide with high adhesive strength.

[0043] Wherein, described preparation method (two) comprises the following steps:

[0044] Step S21 , synthesizing polyamic acid: dissolving diamine in a polar organic solvent and then adding dianhydride to synthesize a first polyamic acid solution.

[0045] Step S22, imidization reaction: adding an imidization agent and an imidization accelerator to the first polyamic acid solution for chemical imidization...

Embodiment 1

[0090] S11. Synthetic polyamic acid

[0091] 2-(4-Aminophenyl)-5-aminobenzimidazole and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane were placed in a vacuum oven at 60°C for 3h, and the homophenylene The tetracarboxylic dianhydride was treated in a vacuum oven at 160 °C for 4 h to remove impurities.

[0092] At room temperature, 1.6019g of 2-(4-aminophenyl)-5-aminobenzimidazole and 1.1212g of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane were dissolved in 28.1089g of N, N-dimethylacetamide, and then under a nitrogen atmosphere, 2.2373 g of pyromellitic dianhydride was added twice while stirring and stirred for 24 h to synthesize the first polyamic acid solution.

[0093] S12, grafted polyamic acid

[0094] To the first polyamic acid solution, add 4-epoxypropaneoxy carbazole with the same molar amount of hydroxyl to carry out the grafting reaction, and after the reaction is finished, add acetonitrile to wash out the grafted polymer with the structure of chemical inte...

Embodiment 2

[0099] Compared with Example 1, the difference between Example 2 and Example 1 is that the diamine monomers used in this example are 2-(4-aminophenyl)-5-aminobenzimidazole and 2,2,0,0,0 having a molar ratio of 1:1. 2-Bis(3-amino-4-hydroxyphenyl)hexafluoropropane. The rest of the materials and the preparation process in this example are exactly the same as those in Example 1, so they will not be repeated.

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Abstract

The invention provides polyimide with high bonding strength and a preparation method and application thereof, the molecular structure of the polyimide has a side chain, the side chain contains a structure having chemical interaction with copper, and the polyimide has high bonding strength with copper. The structure having chemical interaction with copper is selected from at least one of nitrogen heterocyclic ring, thioether, siloxane and phosphate. Through molecular chain structure design, a structure having chemical interaction with copper is designed on a side chain of a polyimide molecule, polyimide with high bonding strength is prepared, and the preparation method has very high selectivity. The polyimide with high bonding strength is applied to the wafer-level chip packaging rewiring structure, the bonding strength between the polyimide and the smooth copper surface is high, the phenomenon of interface failure is prevented, and the wafer-level chip packaging rewiring structure can be used for high-frequency transmission.

Description

technical field [0001] The invention relates to the field of polymer materials, in particular to a polyimide with high adhesive strength and a preparation method and application thereof. Background technique [0002] Polyimide is a kind of rigid chain polymer with a highly regular chemical structure containing an imide ring on the main chain. It has excellent electrical, mechanical and thermal properties, and plays a role in protecting chips and metal lines in the rewiring process. . In the wafer-level chip packaging and rewiring structure, the copper lines are continuously refined and the surface is flattened. Performance requirements in the application process to prevent the occurrence of interface failure. [0003] In order to solve the problem of interface failure, in the prior art, the copper surface is generally roughened and a bonding assistant is added. Roughening the copper surface will have a skin effect, and the signal transmission will be concentrated on the t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10C09J179/08H01L23/29
CPCC08G73/1067C08G73/1039C08G73/1007C08G73/1071C08G73/106C08G73/1042C09J179/08H01L23/293C08G2190/00C08G2170/00
Inventor 张国平钟澳李金辉孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS