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Self-formed double-layer amorphous diffusion barrier layer and preparation method thereof

A barrier layer, amorphous technology, applied in the direction of coating, final product manufacturing, metal material coating process, etc., can solve the problems of poor adhesion, easy oxidation of Cu interconnect lines, etc., and achieve the effect of promoting precipitation

Pending Publication Date: 2022-08-05
王志博
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a self-formed double-layer amorphous diffusion barrier suitable for the surface of medical equipment and its preparation method, to solve the problem that Cu interconnects are easily oxidized at low temperature and air, and SiO2 and large Most dielectric materials have poor adhesion and other problems. The barrier layer film material of the present invention is composed of an optimized combination of amorphous Zr layer and ZrN layer, which can fully meet the requirements of ultra-large-scale Cu interconnection diffusion barrier film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] In an Ar gas atmosphere, Ru, Ge and Cu sheets with a diameter × thickness of Φ50 × 3 mm were used as sputtering targets for co-magnetron sputtering, and Ru-Ge with a thickness of 15 nm was deposited on the Si surface of the silicon wafer in turn. Alloy thin film and 30nm thick Cu(Ru) alloy thin film, and finally 300nm thick pure Cu film is deposited on the surface of Cu(Ru) alloy thin film to form a Cu / Cu(Ru) / Ru-Ge / Si stack system. The total sputtering gas flow was 30sccm, the sputtering gas pressure was 0.2Pa, the powers of Ru and Ge targets were 50W and 100W, respectively, and the deposition time was 150s when the RuGex alloy was co-deposited. The Cu and Ru targets of the co-deposited Cu(Ru) alloy were respectively are 150W and 30W, and the power for depositing pure Cu is 150W. Then the Cu / Cu(Ru) / RuGex / Si stack system was annealed in a vacuum furnace at 200℃~250℃ for 1.5~2h.

[0018] The Ru-RuO / Ru-Ge-Cu double-layer amorphous diffusion barrier barrier layer prepared ...

Embodiment 2

[0020] In an Ar gas atmosphere, Ru, Ge and Cu sheets with a diameter × thickness of Φ50 × 3 mm were used as sputtering targets for co-magnetron sputtering, and Ru-Ge with a thickness of 10 nm was deposited on the Si surface of the silicon wafer in turn. Alloy thin film and 20nm thick Cu(Ru) alloy thin film, and finally 200nm thick pure Cu film is deposited on the surface of Cu(Ru) alloy thin film to form a Cu / Cu(Ru) / RuGex / Si stack system. The total sputtering gas flow is 30sccm, and the sputtering gas pressure is 0.2Pa; when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are 50W and 100W, respectively, and the deposition time is 100s; the Cu and Ru targets of the co-deposited Cu(Ru) alloy are respectively are 150W and 30W, and the power for depositing pure Cu is 150W. Then the Cu / Cu(Ru) / RuGex / Si stack system was annealed in a vacuum furnace at 200℃~250℃ for 1.5~2h.

[0021] The Ru-RuO / Ru-Ge-Cu double-layer amorphous diffusion barrier barrier lay...

Embodiment 3

[0023] In an Ar gas atmosphere, co-magnetron sputtering was carried out with Ru, Ge and Cu sheets with a diameter × thickness of Φ50 × 3 mm as sputtering targets, and SiO2 dielectric layers were first deposited on the Si surface of the silicon wafer, and then sequentially deposited respectively. A 10nm thick Ru-Ge alloy film and a 20nm thick Cu(Ru) alloy film, and finally a 200nm thick pure Cu film was deposited on the surface of the Cu(Ru) alloy film to form a Cu / Cu(Ru) / RuGex / SiO2 / Si stack system . The total sputtering gas flow is 30sccm, and the sputtering gas pressure is 0.2Pa; when the RuGex alloy is co-deposited, the power of the Ru target and the Ge target are 50W and 100W, respectively, and the deposition time is 100s; the Cu and Ru targets of the co-deposited Cu(Ru) alloy are respectively are 150W and 30W, and the power for depositing pure Cu is 150W. Then in a high vacuum environment, annealing at 200 ℃ ~ 250 ℃ for 1.5 ~ 2h, self-forming double Ru-RuO / Ru-Ge-Cu amorph...

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Abstract

The invention provides a self-formed double-layer amorphous diffusion barrier layer suitable for the surface of a medical device and a preparation method of the self-formed double-layer amorphous diffusion barrier layer, and a diffusion barrier layer system comprises a substrate, Cu (Ru) alloy films deposited on the substrate and used as a seed layer and a precipitation layer, and an amorphous Ru-Ge alloy film implanted between the Cu (Ru) alloy films of the substrate and used as a pre-blocking and depletion layer, and a pure Cu layer plated on the Cu (Ru) alloy film and serving as an interconnection layer. The self-formed double-layer barrier layer is continuous, uniform and compact, the thickness can be controlled within several nanometers, the resistance is low, the thermal stability is high, and the performance requirement of medical instrument surface antibiosis on the Cu interconnection diffusion barrier layer is met.

Description

technical field [0001] The invention relates to a diffusion barrier material of an antibacterial Cu interconnection system on the surface of medical devices, in particular to a self-formed double-layer amorphous diffusion barrier layer of Ru-RuO / Ru-Ge-Cu suitable for the surface of medical devices and a preparation method thereof. Background technique [0002] With the development of antibacterial requirements of medical devices, Cu with high antibacterial rate has replaced Al as the interconnect material. However, Cu interconnects are prone to diffusion pollution, easy to be oxidized at low temperature and air, and have good adhesion to SiO2 and most dielectric materials. poor, etc. It is necessary to add an appropriate diffusion barrier layer (DiffusionBarrierLayer) between Cu and Si, SiO2 and the dielectric layer to prevent the oxidation of the Cu film and block the diffusion of Cu atoms, increase the bonding strength of Cu and the dielectric layer, thereby improving the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/35C23C14/58C22C5/04C22C28/00C23C14/02
CPCC23C14/165C23C14/185C23C14/352C23C14/5806C22C5/04C22C28/00C23C14/025Y02P70/50
Inventor 王志博张恩永周睿杨添皓张冉
Owner 王志博