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Detergent and washing method for harmful gas

A harmful gas and cleaning agent technology, applied in the field of cleaning agents, can solve problems such as complex instability and achieve excellent results

Inactive Publication Date: 2004-07-14
JAPAN PIONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found that the alkyl metal hydrides once adsorbed to the cleaning agent are desorbed when left standing for a long time because the complex is unstable

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] (A) Preparation of copper oxide (II)

[0050] Three copper(II) oxides with different BET specific surface areas were prepared as follows.

[0051] (A-1) BET specific surface area is 80 meters 2 Preparation of copper(II) oxide per gram

[0052] A solution of 95.3 g of copper dissolved in 2905 g of nitric acid was added over 10 minutes to an aqueous solution of 120 g of sodium hydroxide dissolved in 2880 g of water at room temperature. The formed precipitate was stirred at room temperature for 3 hours, then separated by filtration, washed 3 times with 6 kg of ion-exchanged water and filtered again to obtain a cupric hydroxide filter cake, then dried at 80°C for 12 hours and calcined at 380°C for 3 hours, powdered copper(II) oxide was obtained. The BET specific surface area of ​​this powdery copper(II) oxide measured by a gas adsorption measuring device "AUTOSORB 3B" (manufactured by YUASA IONICS Co., Ltd.) was 80 m 2 / gram.

[0053] (A-2) Preparation of other copper ...

Embodiment 1

[0063] The specific surface area of ​​100 grams of BET is 80 meters 2 The mixture of powdered copper (II) oxide per gram and 0.5 gram of hydroxypropyl methylcellulose binder is evenly kneaded into a cake, and then extruded into strands with a diameter of 1.8 mm by an extruder. The strands were cut into pellets with a length of about 5-10 mm, and then dried at 90° C. for 12 hours to obtain a cleaning agent (A) (water content: 1.0% by weight).

[0064] Cleaning agent (A) (100 milliliters) is packed in the quartz cleaning tower of inner diameter 20 millimeters, the dry nitrogen that contains 3000ppm tert-butylphosphine as harmful component is at 20 ℃ and under normal pressure at 349 milliliters / min. Velocity (superficial tower linear velocity of 1.85 cm / sec) passes through it. A part of the exhaust gas from the outlet of the cleaning tower was sampled, and the time required to detect tert-butylphosphine in the sampled gas was measured using cobalt chloride (coloring component) s...

Embodiment 2 and 3

[0066] The same cleaning test of Example 1 was repeated except that the concentration of tert-butylphosphine was changed to 500 ppm (Example 2) and 10000 ppm (Example 3). The results are given in Table 1.

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Abstract

A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula:wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2 / g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.

Description

technical field [0001] The present invention relates to a kind of cleaning agent and a kind of cleaning method for cleaning the harmful gas containing the harmful organometallic compound represented by the following general formula: [0002] Rm-M-Hn [0003] Wherein R is an alkyl group, M is As, P, S, Se or Te, and m and n are positive integers respectively, satisfying the equation: m+n=valence of M. More particularly, the present invention relates to a cleaning agent and a method of cleaning harmful gases from a MOCDV (Metal Organic Chemical Vapor Deposition) process or other CVD processes in the production of semiconductors. Background technique [0004] Recent developments in the semiconductor industry have promoted high integration and miniaturization of semiconductor devices. This has led to more use of organometallic compound gases such as tert-butyl arsenic, tert-butyl phosphine, tert-butyl mercaptan, isopropyl arsenic and isopropyl phosphine to replace the commonly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01D53/02B01D53/46B01J20/06C23C16/44
CPCB01D53/02B01J20/28057B01J20/06C23C16/4412B01J20/0237B01D53/46B01D2257/706
Inventor 大塚健二网岛丰长谷见隆司名和洋二
Owner JAPAN PIONICS