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Method for cleaning gas distributor of chemical gas-phase depositing reaction chamber

A chemical vapor deposition and gas distributor technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of increasing the frequency of parameter adjustment, changing the plasma and gas flow patterns, and shortening the life of the gas distributor. and other problems to achieve the effect of increasing stability and prolonging life.

Inactive Publication Date: 2005-01-12
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this method cannot effectively remove aluminum fluoride deposits, it gradually accumulates, resulting in changes in plasma and gas flow patterns, increasing the frequency of parameter adjustments and shortening the life of the gas distributor

Method used

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  • Method for cleaning gas distributor of chemical gas-phase depositing reaction chamber

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In the reaction chamber of Centura-Dxz (a single-chip reaction chamber with a new gas distributor), a silicon oxide film of 13,000 Angstroms was deposited on a silicon chip by chemical vapor deposition (CVD). After the cumulative number of deposited sheets reached 3000, the gas distributor in the reactor was taken out to perform the cleaning of the present invention.

[0028] Soak the gas distributor in the alkaline agent of ammonia:hydrogen peroxide:water=2.5:4:8 (volume mixing ratio) for about 60 minutes to remove the aluminum fluoride compound. Next, rinse the gas distributor with deionized water for about 5 minutes to remove residual alkali. This step is called quick down rinse (QDR; quick down rinse). Then, soak in diluted nitric acid or hydrochloric acid (2M) for about 15 minutes to remove the aluminum ammonia compound film formed on the surface of the gas distributor after soaking in ammonia water in the previous stage, and also to remove possible metal pollution...

Embodiment 2

[0030] The gas distributor cleaned by the method of Example 1 was assembled back into the above-mentioned reaction chamber, and 1000 Angstroms of silicon oxide was grown by chemical vapor deposition, and then the metal contamination of the deposited silicon oxide film was analyzed. The results are shown in Table 1. From the analysis results in Table 1, it can be seen that the silicon oxide film has no metal contamination concerns, and its impurity (impurity) content is far lower than the standard 1E12atom / cm set by the general CVD dielectric layer. 2 .

Embodiment 3

[0032] A silicon oxide film of approximately 13,000 Angstroms was deposited on a silicon chip by chemical vapor deposition using a new virgin gas distributor set up in a Centura-Dxz chamber. Then the film properties of the deposited silicon oxide film were analyzed, and the solution composition used in determining the etch rate was NH 4 F:HF:H 2 O=30:6:64 (volume ratio). The results are shown in Table II.

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Abstract

A process for cleaning gas distributor in gas-phase chemical depositing reaction chamber includes such steps as immersing it in alkaline chemical liquid containing ammonia water to remove aluminium fluoride from it, and removing the residual alkali. The gas distributor is made up from the material containing aluminium.

Description

technical field [0001] The invention relates to a cleaning method for a gas distributor of a chemical vapor deposition reaction chamber, in particular to a cleaning method for removing aluminum fluoride attached to the gas distributor by using an alkaline agent containing ammonia water. Background technique [0002] In the manufacturing process of integrated circuits, silicon oxide is usually used as the dielectric layer between metal wires, mainly because of its small dielectric coefficient and good thermal conductivity. Since the material of the metal wire is aluminum or alloy, its melting point is lower than 500° C., so the deposition temperature of the silicon oxide dielectric layer should be limited below 450° C. [0003] Currently, silicon oxide manufacturing processes used to deposit metal layers are mainly Ozone TEOSoxide (ozone-tetraethoxysilicate oxide), PE-Oxide (plasma-enhanced oxide) and the like. As the area of ​​the wafer becomes larger, the single-chip react...

Claims

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Application Information

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IPC IPC(8): C23C16/00C23G1/14
Inventor 杨能辉施泓林朱赞锜阮仲杰
Owner WINBOND ELECTRONICS CORP