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Semiconductor laser module and its making method and light amplifier

A technology of lasers and semiconductors, applied in the direction of semiconductor lasers, semiconductor laser devices, lasers, etc., can solve problems such as difficult positioning, time-consuming manufacturing, and increased manufacturing costs

Inactive Publication Date: 2005-06-01
FURUKAWA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, since the semiconductor laser is enlarged by receiving the two light beams emitted at a wide interval (500 μm between the centers of light emission) by using different lenses to obtain two laser beams parallel to each other, the semiconductor chip obtained from one wafer Quantities will be reduced and thus not suitable for mass production
In order to eliminate this problem, if the interval between the semiconductor lasers in the bands is reduced, the lens needs to be miniaturized, and it will become difficult to isolate the lights output from each band from each other, and then it will become difficult to perform polarization synthesis or light synthesis.
[0011] In addition, it is necessary to position the lens separately for the laser light output from the semiconductor laser, which complicates the manufacturing process and takes time for manufacturing.
In the existing example 2, in order to eliminate such positioning difficulties, therefore spherical lens arrays, Fresnel lens arrays, etc. are used. Usually, this lens array that is not used is used as a lens, so there is an increase in manufacturing cost, and the manufacture of this lens array time-consuming problem

Method used

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  • Semiconductor laser module and its making method and light amplifier
  • Semiconductor laser module and its making method and light amplifier
  • Semiconductor laser module and its making method and light amplifier

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0076] figure 1 (A) shows the side sectional view of the structure of the semiconductor laser module of the first embodiment of the present invention, figure 2 It is an explanatory diagram standardizedly showing the structure of the semiconductor laser module of the first embodiment of the present invention.

[0077] like figure 1 As shown in (A), the semiconductor laser module M1 of the first embodiment of the present invention has a hermetically sealed package 1, a semiconductor laser 2 that emits laser light in the package 1, a photodiode (light receiving device) 3, and a first lens. 4. A prism 5 , a half-wavelength plate (polarization rotation device) 6 , a PBC (Polarization Beam Combiner) 7 , and an optical fiber 8 .

[0078] Semiconductor lasers 2, such as figure 2 It is shown that the first zone 9 (ribbon-shaped light-emitting part) and the second zone 10 are spaced apart from each other on the same plane along the length direction, and from the end faces of the fi...

no. 2 Embodiment

[0149] Figure 10 It is an explanatory diagram standardizedly showing the structure of the semiconductor laser module M2 according to the second embodiment of the present invention. like Figure 10 As shown, in the second embodiment, the incident surfaces of the first laser K1 and the second laser K2 of the PBC 7 are formed obliquely and wedge-shaped, and the first laser K1 as an ordinary ray propagates along the axial direction of the optical fiber 8 . Everything else is about the same as the semiconductor laser module of the first embodiment.

[0150] According to the second embodiment, since the first laser beam K1 which is an ordinary ray propagates along the axial direction of the optical fiber 8, there is no need to dispose the prism 5 between the half-wave plate 6 and the first lens 4, and the configuration is simplified.

[0151] In addition, the optical axis length of the semiconductor laser module M2 can be shortened, thereby reducing the influence of package warpa...

no. 3 Embodiment

[0154] Figure 11 It is an explanatory diagram standardizedly showing the structure of the semiconductor laser module M3 according to the third embodiment of the present invention. like Figure 11 As shown, in the third embodiment, the semiconductor laser 2 and the first lens 4 are arranged inclined at a predetermined angle to the axial direction, so that the first laser K1 as an ordinary ray passes through the first lens and propagates along the axial direction of the optical fiber 8 . Everything else is about the same as the semiconductor laser module of the first embodiment.

[0155] According to the third embodiment, since the first laser beam K1 which is an ordinary ray propagates along the axial direction of the optical fiber 8, there is no need to arrange the prism 5 between the half-wave plate 6 and the first lens 4, and the configuration is simplified. In addition, only one of the PBC7 can be ground, so that the grinding can be simplified compared with the second em...

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PUM

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Abstract

A semiconductor laser module has: a first zone 9 and a second zone 10 formed at intervals, and a first laser K1 and a second laser K2 are respectively emitted from the first zone 9 and the second zone 10 Semiconductor laser 2; incident the first laser K1 and the second laser K2 emitted from the semiconductor laser 2, and the first lens 4 that condenses the first laser K1 and the second laser K2 at different focal points; the polarization plane of the first laser K1 The half-wavelength plate 6 rotated by 90 degrees; the polarization combining member 7 for combining and emitting the incident first laser K1 and the second laser K2; and the optical fiber 8 that receives the laser emitted from the polarization combining member 7 and sends it out.

Description

technical field [0001] The present invention relates to a semiconductor laser module, its manufacturing method, and an optical amplifier using the semiconductor laser module, and more particularly, to a semiconductor laser module using a semiconductor laser that emits two laser beams from two stripes. Background technique [0002] With the development of high-density wavelength-division multiplexing transmission method optical communication in recent years, there is an increasing demand for an excitation light source using an optical amplifier to increase the output. [0003] In addition, recently, as an optical amplifier, expectations for a Raman amplifier as a device for amplifying light in a wider frequency band than conventionally used erbium-doped optical amplifiers are increasing. The Raman amplifier uses the inductive Raman scattering that occurs when the excitation light is incident on the optical fiber to present a gain on the low-frequency side of about 13 THz from...

Claims

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Application Information

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IPC IPC(8): G02B6/34G02B6/42H01S3/094H01S3/0941H01S5/00H01S5/022H01S5/12H01S5/14H01S5/40
CPCG02B6/4206G02B6/4218H01S3/094003H01S3/094073H01S3/094096H01S3/09415H01S5/02415H01S5/02438H01S5/1203H01S5/1212H01S5/1215H01S5/146H01S5/4012H01S5/4062H01S5/4068H01S5/4087H01S5/02251H01S5/02325
Inventor 木村俊雄中江将士清水健男築地直树吉田顺自舟桥政树爱清武山本敏郎虎谷智明松浦宽小西美惠子
Owner FURUKAWA ELECTRIC CO LTD