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Dry etching method for gallium nitride materials

A dry etching, gallium nitride technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of high etching rate and high etching selectivity

Inactive Publication Date: 2006-08-30
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The present invention provides a dry etching method in order to solve the two problems of etching selectivity and etching rate in dry etching

Method used

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  • Dry etching method for gallium nitride materials
  • Dry etching method for gallium nitride materials
  • Dry etching method for gallium nitride materials

Examples

Experimental program
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Effect test

Embodiment 1

[0029] The gallium nitride-based HEMT is subjected to an etching experiment using the dry etching method disclosed in the present invention. The basic structure of HEMT is as figure 2 Shown: a sapphire substrate 1 covered sequentially with GaN layer 2 (thickness 2000nm), AlGaN layer 3 (thickness 20nm), GaN layer 4 (thickness 20nm). When making the device, it is necessary to cover the mask 5 on the top to form the required pattern. The purpose of etching is to remove a part of the uppermost GaN layer 4 to expose the AlGaN layer 3, and use the gas combination (Cl 2 / N 2 / O 2 ) formed plasma 6 for dry etching, the etching conditions are as figure 1 Under the conditions in , the flow rate of oxygen is 2 sccm, and the obtained etching rates for GaN and AlGaN are 320nm / min and 5nm / min, respectively. After etching for 4s, the HEMT was taken out, and it was observed that the AlGaN layer was exposed on the surface. There was no residue, no scratches on the surface, and it was extr...

Embodiment 2

[0031] An etching test is carried out on a gallium nitride-based photodiode (photodiode) by using the dry etching method disclosed in the present invention. The basic structure of a photodiode is as image 3 Shown: sapphire substrate 1, covered with n-type GaN layer 2 (thickness 3600nm), unintentionally doped GaN absorption layer 3 (thickness 800nm), p-type AlGaN layer 4 (thickness 250nm), and p-type GaN contact layer 5 (thickness 20nm). When making the device, it is necessary to cover the mask 6 above to form the required pattern. The purpose of etching is to remove a part of the uppermost GaN layer 5 to expose the AlGaN layer 4, and use the gas combination (Cl 2 / He / O 2 ) formed plasma 7 for dry etching, the flow rates of chlorine, helium and oxygen are 40, 20 and 2sccm respectively, the ICP power is 1750W, the DC bias is-220V, and the reaction chamber pressure is 20mTorr, the obtained pair The etch rates of GaN and AlGaN are 300nm / min and 5nm / min respectively. After etc...

Embodiment 3

[0033] The gallium nitride-based laser diode is etched by the dry etching method disclosed in the present invention. The basic structure of a laser diode is as Figure 4 Shown: a sapphire substrate 1 covered in sequence with n-type GaN layer 2 (thickness 3000nm), n-type InGaN layer 3 (thickness 100nm), n-type AlGaN layer 4 (thickness 500nm), n-type GaN layer 5 (thickness 100nm) ), then InGaN / GaN quantum well active layer 6, p-type AlGaN layer 7 (thickness 20nm), p-type GaN layer 8 (thickness 100nm), p-type AlGaN layer 9 (thickness 500nm), p-type GaN layer 10 (thickness 200nm). When making the device, it is necessary to cover the mask 11 above to form the required pattern. The purpose of etching is to remove a part of the uppermost GaN layer 10 to expose the AlGaN layer 9, and use the gas combination (Cl 2 / Ne / O 2 ) formed plasma 11 for dry etching, the flow rates of chlorine gas, neon gas and oxygen gas are 40, 20 and 2 sccm respectively, the ICP power is 1750W, the DC bias...

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Abstract

The present invention discloses a method for dry-etching gallium nitride material. It is characterized in that the etch process is carried out through the plasma generated from the reactive gas formed by mixing chlorine, nitrogen and oxygen Cl2 / N2 / O2 to acquire the high selective etching ratio and the high etching rate of GaN. The mixing gas can also be Cl2 / He / O2, or Cl2 / Ne / O2 or Cl2 / N2O / O2. Because the invention uses the combination of three gases as the reactive gas in the method for dry-etching the gallium nitride material, both the high selective etching ratio and the high etching rate of GaN can be acquired. Meanwhile, a smooth etched surface without leavings and etching marks can be obtained. By adjusting the relative content of oxygen in these three mixing gases the selective etching ratio and the etching rate can be adjusted. The experiment result indicates that if the selective etching ratio of GaN versus Al0.28Ga0.72N is 60 : 1, the etching rate of GaN can reach the level of 320 nm / min.

Description

technical field [0001] The present invention relates to a gallium nitride compound used in devices such as light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and photodetectors The invention relates to a semiconductor dry etching method, which belongs to the technical field of gallium nitride material etching. Background technique [0002] In the process of making light-emitting diodes, laser diodes, high electron mobility transistors, heterojunction bipolar transistors, photodetectors and other devices based on gallium nitride-based materials, it is necessary to use gallium nitride-based materials (including GaN, InN, AlN, AlGaN, InGaN, AlInGaN, etc.) for etching. If wet etching is used to etch III-V compound semiconductors, hydrochloric acid, sulfuric acid, hydrofluoric acid or their mixtures are generally used. Due to the high bonding energy and stable chemical properties of gallium nit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065C23F1/12
Inventor 罗毅韩彦军薛松胡卉郭文平邵嘉平孙长征郝智彪
Owner TSINGHUA UNIV