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Method for modifying porous film, modified porous film and its application

一种多孔质、薄膜的技术，应用在薄料处理、涂层、电气元件等方向，能够解决耗费较长时间、合格率降低、尚无可同时满足疏水性及膜强度多孔质薄膜制备技术等问题，达到疏水性及机械强度优异的效果

Inactive Publication Date: 2007-08-15
MITSUI CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Among them, the former method of depositing porous silica on the surface of the substrate has the following problems: it takes a long time to form a thin film, and in many cases, porous silica is precipitated in the form of powder, which makes qualified rate reduction
[0016] As mentioned above, there is currently no technology for preparing porous films that can satisfy both hydrophobicity and membrane strength.

Method used

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  • Method for modifying porous film, modified porous film and its application
  • Method for modifying porous film, modified porous film and its application
  • Method for modifying porous film, modified porous film and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0142] (preparation of coating solution)

[0143] After mixing 10.0 g of tetraethoxysilane and 10 mL of ethanol at room temperature, 1.0 mL of 1N hydrochloric acid was added and stirred, and 40 mL of ethanol was added and stirred. Add 8mL of water to this solution, and after stirring, a transparent and uniform coating solution is formed.

[0144] (film formation)

[0145] Drop a few ml of the prepared coating solution on the surface of an 8-inch silicon wafer, rotate it at 2000rpm for 10 seconds, coat it on the surface of the silicon wafer, dry it at 100°C for 1 hour, and then burn it at 400°C for 3 hours , made of porous film.

[0146] (modification of porous film)

[0147] The porous thin film obtained above was plugged in a reaction tube made of quartz, nitrogen gas was blown in at 500 mL / min, and it was left to stand at 400° C. for 30 minutes. Thereafter, nitrogen gas was passed into an evaporator at 25°C, in which there was 1,3,5,7-tetramethylcyclotetrasiloxane as an ...

Embodiment 2

[0153] After mixing 10.0 g of tetraethoxysilane and 10 mL of ethanol at room temperature, 1.0 mL of 1N hydrochloric acid was added and stirred. Further, 2.8 g of a polyalkylene oxide block copolymer (Pluronic P 123 manufactured by BASF Corporation)b was dissolved in 40 mL of ethanol, and added to the above-mentioned liquid mixture, followed by stirring. Then add 8mL of water to this solution, and after stirring, a transparent and uniform coating solution is formed.

[0154] Next, as in Example 1, a porous film was prepared. This porous thin film had a periodic 2D-hexagonal structure with a plane interval of 7.0 nm as measured by X-ray diffraction. In addition, the average pore diameter of the porous thin film was 5.8 nm. Next, modify as in Example 1. Table 1 shows the relative permittivity and elastic modulus before and after modification of the obtained porous film measured.

Embodiment 3

[0156] After mixing 10.0 g of tetraethoxysilane and 10 mL of ethanol at room temperature, 1.0 mL of 1N hydrochloric acid was added and stirred to obtain a (A) component solution. Tris(decafluoro)-1,1,2,2-tetrahydrooctyl-1-triethoxysilane 0.13g and 2-(methoxy(polyethyleneoxy)propyl)trimethylsilane 0.14g g and 10 mL of ethanol were mixed and stirred, then 0.0035 mL of 1N hydrochloric acid was added and stirred to obtain a component (B) solution. Thereafter, 2.9 g of a poly(alkylene oxide) block copolymer (manufactured by Mitsui Takeda Chemical Co., Ltd.) was dissolved in 30 mL of ethanol to obtain a component (C) solution. (B) Component solution is added to (C) Component solution, and it stirs. Furthermore, the liquid mixture of this (C) component solution and (B) component solution is added to (A) component solution, and it stirs. Then add 8mL of water to this solution, and after stirring, a transparent and uniform coating solution is formed.

[0157] Next, as in Example 1, ...

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Abstract

The present invention is a modification method of a porous thin film mainly composed of Si-O bonding, which will have one or more Si-X-Si bonding units (X represents O, NR, C n h 2n or C 6 h 4 , R means C m h 2m+1 or C 6 h 5 , m is an integer from 1 to 6, n is 1 or 2), and 2 or more Si-A binding units (A represents H, OH, OC e h 2e+1 Or a halogen atom, e is an integer of 1 to 6) (A in the same molecule may be the same or different) organosilicon compound is contacted with the porous film, and heat treatment is performed without using a metal catalyst. The porous thin film obtained by this method is extremely excellent in hydrophobicity and mechanical strength, so it can be used in optical functional materials and electronic functional materials. In particular, it is very suitable as a material for semiconductors, and can be used as an interlayer insulating film of a semiconductor device.

Description

technical field [0001] The present invention relates to a modification method of a porous film, a modified porous film by the modification method, a semiconductor material and a semiconductor device using the modified porous film. Specifically, it is about a porous film with excellent hydrophobicity and mechanical strength that can be used in optical functional materials, electronic functional materials, etc., and the modification of the modified porous film that can achieve this porous film. method. Background technique [0002] Zeolite and silica gel are known as porous materials composed of Si—O bonds. Although zeolite is a silica crystal having uniform pores, the diameter of the pores does not exceed 13 Ȧ. In addition, although silica gel has pores in the mesoscale range of 2 to 50 nm, the distribution of pores is not uniform. Therefore, these materials can only be used for limited purposes. [0003] In contrast, porous inorganic oxides having uniform mesoscale pores...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/12H01L21/316C09D183/02C09D183/04C09D183/14
CPCY10T428/31663H01L21/02337C09D183/04H01L21/31695H01L21/02216H01L21/02126H01L21/02203H01L21/02282C09D183/14
Inventor 高村一夫大池俊辅洼田武司村上雅美藏野义人
Owner MITSUI CHEM INC
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