Non-linear voltage resistance

A non-linear resistance, voltage technology, applied in the direction of varistor, overvoltage protection resistor, varistor core, etc., can solve the problem that the miniaturization of voltage non-linear resistance cannot be realized, and high temperature sintering above 550 ℃ is required. , the deterioration of voltage characteristics and charging life characteristics, etc., to achieve the effects of good current-voltage characteristics and charging life characteristics, high energy absorption capacity, and low thermal expansion coefficient

Inactive Publication Date: 2002-03-20
KK TOSHIBA
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Problems solved by technology

However, in the composition range of the bismuth borosilicate glass (B-Si-Bi-Zn-O) disclosed in the Japanese Patent No. 2516531, a Bi glass composition is coated on the side of the voltage varistor and sintered. During vitrification, there are components that cannot be sintered at a high temperature below 550°C, and some components must be sintered at a high temperature above 550°C. During sintering, the glass component dissolves into the sintered body 1, or the crystal structure of the components inside the sintered body changes. As a result, the current-voltage characteristics and charging life characteristics of the voltage non-linear resistance deteriorate
In addition, in the composition range of the bismuth borosilicate glass (B-Si-Bi-Zn-O) disclosed in Japanese Patent No. 2516531, there is a large difference in thermal expansion coefficient between the sintered body and the bismuth borosilicate glass. Therefore, when a surge is applied to the voltage non-linear resistance, the side high-resistance layer falls off from the sintered body, or the side high-resistance layer cracks, so that good energy absorption capacity cannot be obtained, and the voltage non-linear resistance cannot be realized. A certain degree of miniaturization of the

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] A voltage non-linear resistor was manufactured by preparing a sintered body, forming a side high-resistance layer, and forming an electrode as described below. Production of sintered body

[0079] In zinc oxide (ZnO) as the main component, bismuth oxide (Bi 2 o 3 ), manganese oxide (MnO 2 ), each 1 mol% of cobalt oxide (Co 2 o 3 ), nickel oxide (NiO), antimony trioxide (Sb 2 o 3), mixing the raw materials with water and organic binders in a mixing device to prepare a mixed slurry. Next, after spraying and granulating the mixed slurry with a spray dryer, a predetermined weight of the granulated powder is put into a metal mold and pressurized with a predetermined pressure to form, for example, a disc with a diameter of 50 mm. Then, it is heat-treated in air at 400-500°C to degrease, and then sintered at 1200°C to make a disk-shaped sintered body. Formation of side high resistance layer

[0080] First, mix bismuth-based glass powder with an organic binder and wate...

Embodiment 2

[0096] A voltage non-linear resistor was manufactured by forming a side high-resistance layer and forming an electrode as described below. Formation of side high resistance layer

[0097] First, mix bismuth-based glass powder with organic binder and water to prepare 16 kinds of mixed pastes. The bismuth-based glass powder contains Bi as a main component and contains Zn, B, Si, Al, and Ba in predetermined amounts as oxides.

[0098] In addition, in the bismuth-based glass of a specific composition composed of the above-mentioned components, a predetermined amount of cordierite (Mg 2 Al 4 Si 5 o 18 ) filler and mullite (Al 6 Si 2 o 13 ) filler, the mixture was mixed with an organic binder and water, and prepared into 10 kinds of mixed slurry.

[0099] Next, each of the above-mentioned mixed slurries was applied to the side surfaces of the same disk-shaped sintered body as in Example 1, and fired to form side high-resistance layers. electrode formation

[0100] The surf...

Embodiment 3

[0113] A voltage non-linear resistor was manufactured by forming a side high-resistance layer and forming an electrode as described below. Formation of side high resistance layer

[0114] First, the following four types of mixed slurries for forming side high-resistance layers were prepared.

[0115] (1) Bismuth-based glass powder is mixed with an organic binder and water to prepare a first mixed slurry. The composition of the bismuth-based glass powder is mainly composed of Bi, containing Zn, B, Si, Al, Ba, and its content is calculated as ZnO=10wt%, B 2 o 3 =5wt%, SiO 2 =1.0wt%, Al 2 o 3 = 1.0 wt%, BaO = 1.0 wt%.

[0116] (2) Add 10wt% cordierite (Mg 2 Al 4 Si 5 o 18 ) filler, the mixture is mixed with an organic binder and water to prepare a second mixed slurry. The composition of the above-mentioned bismuth-based glass powder is mainly composed of Bi, containing Zn, B, Si, Al, Ba, and its content is calculated as ZnO=10wt%, B 2 o 3 =5wt%, SiO 2 =1.0wt%, Al 2...

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Abstract

A voltage nonlinear resistor has a voltage nonlinear resistive body including zinc oxide, and a side face high-resistance layer provided on the side face of the resistive body. and the side high-resistance layer is made mainly of Bi(bismuth) and contains Zn(zinc), B(boron), Si(silicon), Al(aluminum), and Ba(barium) which lie within the ranges of ZnO=1.0-25 wt.%, B2O3=1.0-10 wt.%, SiO2=0.1-5 wt.%, Al2O3=0.05-3 wt.%, and BaO=0.05-3 wt.% in terms of oxides.

Description

field of invention [0001] The invention relates to a voltage non-linear resistor used in an overvoltage protection device for protecting a power system and a manufacturing method thereof, in particular to a voltage non-linear resistor with a side high-resistance layer and a manufacturing method thereof. Background technique [0002] In the power system, in order to eliminate the overvoltage superimposed on the normal voltage and protect the power system, an overvoltage protection device such as a lightning arrester or a surge absorber is generally used. In this overvoltage protection device, a voltage non-linear resistor is mainly used. The so-called voltage non-linear resistance means that the resistance shows a slight insulating characteristic at normal voltage, and has a relatively low resistance characteristic at overvoltage. The voltage non-linear resistance has a sintered body, the sintered body is mainly composed of ZnO (zinc oxide), in order to obtain the voltage no...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453H01C7/102H01C7/12
CPCH01C7/102C04B35/453H01C7/12
Inventor 今井俊哉宇田川刚春日靖宣
Owner KK TOSHIBA
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