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Method for manufacturing nitride semiconductor and method for making semiconductor device

A nitride semiconductor and manufacturing method technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor lasers, etc., can solve the problems of increased operating voltage, low carrier concentration, easy changes in characteristics, etc., to prevent degradation. Effect

Inactive Publication Date: 2003-02-05
SONY CORP
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  • Application Information

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Problems solved by technology

[0004] However, for a p-type semiconductor, since the impurity doped in the semiconductor such as magnesium (Mg) is combined with hydrogen (H), the activation rate of the p-type impurity is low, so the carrier concentration of the semiconductor is very low, about 1×10 16 cm -3
As a result, it is difficult to make the required ohmic contact between the electrode and the semiconductor, resulting in the problems of increased operating voltage and variable characteristics

Method used

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  • Method for manufacturing nitride semiconductor and method for making semiconductor device
  • Method for manufacturing nitride semiconductor and method for making semiconductor device
  • Method for manufacturing nitride semiconductor and method for making semiconductor device

Examples

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example 1

[0047] A plurality of substrates 21 are prepared, each having the same image 3 A plurality of semiconductor lasers of the same structure as shown are fabricated on each substrate 21 .

[0048] Surface treatment and cleaning treatment were carried out as follows. The surface treatment before activating the p-type impurities was performed by irradiating the surface of the nitride semiconductor with ultraviolet light in an atmosphere containing ozone at 80°C for 10 minutes (see figure 1 Step S104 shown in ). Use acetone with ultrasonic waves for cleaning before the above surface treatment (note: do not use acid and / or alkali for cleaning) (see figure 1 Step S102 shown in ). Surface treatment after activating the p-type impurities was performed by immersing the substrate in an aqueous solution containing potassium hydroxide at 60°C for 5 minutes and then immersing the substrate in hydrofluoric acid at 50°C for 5 minutes (see figure 1 Step S106 shown in ). It should be noted ...

example 2

[0052] Two substrates 21 were produced by the methods used in Example 1 and Comparative Example 1, respectively. As Example 2, in the same manner as described in Example 1, a plurality of semiconductor lasers were prepared on half of each substrate 21, as Comparative Example 2, except that the surface of the nitride semiconductor was not exposed to an atmosphere containing active oxygen , in the same manner as described in Example 1, a plurality of semiconductor lasers were fabricated on the remaining half of the substrate 21. Among the plurality of semiconductor lasers manufactured in each of Example 2 and Comparative Example 2, a specific number of semiconductor lasers, shown in Table 1, were selected as samples. By applying a current of 50 mA to the samples, the contact resistance and voltage of the p-side electrode 31 were measured for each sample, and the average value of the measured contact resistance and the average value and standard deviation of the measured voltage ...

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Abstract

A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and hence to variation in characteristics of the nitride semiconductor.

Description

background of the invention [0001] The present invention relates to a method of manufacturing a nitride semiconductor including a step of activating a p-type impurity, and a method of manufacturing a semiconductor device using the nitride semiconductor. [0002] Nitride semiconductors such as GaN, AlGaN mixed crystals, and AlInGaN mixed crystals have been expected as materials for forming light-emitting devices capable of emitting light in a wide range from the visible region to the ultraviolet region, or as materials for forming electronic devices. In particular, light emitting diodes (LEDs) using nitride semiconductors have been available and have become the focus of attention. It has also been reported that a semiconductor laser (LD) using a nitride semiconductor has become a reality, and such an LD is expected to be widely used, for example, as a light source of an optical disk drive. [0003] Incidentally, in order to obtain excellent characteristics of such a device, it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/43C30B33/00H01L21/28H01L21/285H01L21/316H01L21/324H01S5/042H01S5/323
CPCH01L21/3245C30B29/403C30B29/406C30B33/00H01L21/28575H01L21/02247H01L21/02052H01L21/0254H01L33/007
Inventor 松本治安斋信一喜嶋悟
Owner SONY CORP
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