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Method for producing adjustable wave length distribution Bragg reflective laser

A technology of Bragg distribution and manufacturing method, which is applied in lasers, laser parts, semiconductor lasers, etc., to achieve the effect of solving the problem that the device structure is too long, reducing the cost of the device and reducing the cost.

Inactive Publication Date: 2004-04-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The present invention proposes to adopt simple holographic exposure technology to form segmented Bragg (Bragg) sampling grating manufacturing technology with different refractive indices (ie different coupling efficiencies), improve the active to passive waveguide butt joint, and solve the problem of vertical multi-quantum well layer The epitaxial regrowth problem caused by the uneven etching interface in the direction reduces the loss caused by interface scattering, absorption and reflection, and achieves the purpose of improving the coupling efficiency of the device

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  • Method for producing adjustable wave length distribution Bragg reflective laser
  • Method for producing adjustable wave length distribution Bragg reflective laser
  • Method for producing adjustable wave length distribution Bragg reflective laser

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Embodiment Construction

[0027] see Figure 1-Figure 6 As shown, a wavelength tunable distributed Bragg reflection laser of the present invention includes a laser with an indium phosphide etching barrier layer; gratings with different depths; active regions, isolation regions, and grating regions of a single ridge structure, and its fabrication method, comprising the steps of:

[0028] (1) A multiple quantum well (MQW) structure is epitaxially grown on the substrate 1. As the active region of the laser, the MQW structure includes: a lower waveguide confinement layer 2, an indium phosphide (InP) etching barrier layer 3, and an MQW structure 4 , InP layer 5, see figure 1 shown;

[0029] (2) Mask photolithography, etch away the multi-quantum well layer structure outside the active region strip, etch to the barrier layer 3 to form a platform strip, as the active region part 4, see figure 2 shown;

[0030] (3) InP layer 5 is selectively etched, the epitaxial material indium gallium arsenide phosphide ...

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Abstract

A method for processing wave length tunable distribution Bragg reflection laser includes the following steps:1) epitaxing a multiple quantum well layer structure on a n-type InP substrate, 2) corroding the multiple quantum well layer out of an active region by mask photoetching, 3) epitaxing InGaAsP material and a layer of indium phosphide, 4) depositing a layer of medium film to mask the grating window and selecting to corrode the indium phospbide layer, 5) taking the complete plate as the uniform Bragg grating, 6) epitaxially growing the grating cover layer and an electrode contact layer, 7) photoectching rib strips to mask photoetching electro isolation zone to deposit SiO2 layer and applying ionic implantation in the isolation ditch to form high isolation resistor zone, 8) sputtering P and N sides electrodes.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor laser, in particular to a manufacturing method of a wavelength tunable distributed Bragg reflection (DBR) semiconductor laser. Background technique [0002] Wavelength tunable semiconductor lasers are key components in fiber optic communication systems. As a light source for information transmission, semiconductor tunable lasers can replace a series of discrete single-wavelength semiconductor lasers in dense wavelength division multiplexing (DWDM) systems, thereby reducing system costs; Drift, thereby interfering with adjacent spectral lines, but after using a tunable laser, the output wavelength can be changed and adjusted in time according to system requirements, avoiding the influence of wavelength drift. At the same time, the wavelength control program and detection program of the system can be greatly simplified. At present, tunable semiconductor lasers have become a hotspot of i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00
Inventor 陆羽朱洪亮王圩赵玲娟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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