Structure and making method of thin film transistor

Abstract

The invention discloses a structure of a film transistor and a manufacturing method. The method includes at providing a base board, a grating electrode is formed on the base board, and a grating electrode dielectric layer covers the grating electrode and the base board; the, carries on ion injection step to the grating electrode dielectric layer; and forms a semi-conductor on the grating electrode dielectric layer after the injection.

Description

technical field [0001] The present invention relates to a thin-film transistor (thin-film transistor; TFT) structure and manufacturing method, in particular to a thin-film transistor structure and manufacturing method whose active region is a microcrystalline structure (microcrystalline). Background technique [0002] Thin-film transistors are active elements commonly used in liquid crystal displays. By using thin-film transistors, the semiconductor layer of the thin-film transistors becomes a low-resistance state (ON state) during the image data writing period (address period). Transfer and write the image data into a capacitor to change the angle of the liquid crystal; and during the sustain period (sustain period), the semiconductor layer can be made into a high resistance state (OFF state), and the stored on the capacitor Image data remains constant. [0003] Common thin film transistor structures used in thin film transistor flat panel displays such as figure 1 As sho...

AI Technical Summary

Problems solved by technology

The silicon structure formed by this technology is close to amorphous silicon at the bottom, especially the interface adjacent to the gate dielectric layer, so the electron movement speed in the channel region is relatively slow, which in turn affects the performance of the thin film transistor.

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