Process for preparing titanium silicon carbon ceramic powder

Abstract

The invention provides a process for preparing titanium silicon carbon ceramic powder which comprises the steps of, (1) mixing titanium (Ti), silicon (Si), graphite powder (C) by the mol ratio of 3 : (1-2) : (1.5-2), ball grinding to synthesize ceramic powder with Ti, Si and C as the principal phase, (2) acid-washing the synthesized fines 0.5-2 hours through hydrofluoric acid solution to remove the silicides, (3) subjecting the powder to distilled water rinsing and drying, oxidation treating 1-4 hours at 400-500 deg. C to remove titanium carbide, removing the oxides by using the mixed solution of ammonia sulfate and sulfuric acid, water scrubbing and drying to obtain the Ti-Si-C ceramic powder.

Description

technical field [0001] The present invention relates to a kind of preparation method of ceramic powder, especially a kind of preparation method of titanium silicon carbon Ti 3 SiC 2 method of ceramic powder. Background technique [0002] In recent years, the ternary layered compound Ti 3 SiC 2 As a new type of material, it has become a research hotspot. Ti 3 SiC 2 The theoretical density is 4.53g / cm 3 . This material combines many excellent properties of metal and ceramics, such as metal is an excellent electrical and thermal conductor, its thermal conductivity and electrical conductivity are 43W / (m.K) and 4.5×10 6 Ω -1 .m -1 , Relatively "soft", with a Vickers hardness of 4-7GPa, easy to process, and insensitive to thermal shock. After thermal shock at ΔT=1400°C, the residual strength of the material is still 300MPa, and it shows high-temperature plastic behavior above 1200°C; It has the oxidation resistance of ceramics, and it still has good oxidation resistance...

AI Technical Summary

Problems solved by technology

In the ceramic industry, there is a great demand for high-purity powder materials. If you want to obtain Ti with higher purity through the above method 3 SiC 2 For powder, the above-mentioned synthesized block materials need to be crushed and ground first, and then the impurity phases such as TiC are removed through the pickling and oxidation treatment process in the later stage. The process is relatively complicated and the cost is high.

At the same time, when the above sintering process is adopted, the sintering temperature is in the range of 1300-1600 °C, which consumes high energy, takes a long time, and the preparation process is relatively troublesome, which correspondingly increases the preparation cost, and the obtained high-purity Ti 3 SiC 2 The amount of powder is small and can only be used for experiments

In addition, Ti prepared by high-temperature solid-state reaction method 3 SiC 2 The sintered agglomerate needs to be re-pulverized to obtain a powder. The particle size of the formed powder is large and cannot be controlled. The particle size and shape are different, and the activity of the powder is poor.

Images