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Mfg.method of element and observing method thereof

A manufacturing method and device technology, which can be used in semiconductor/solid-state device manufacturing, optical record carrier manufacturing, recording/reproducing by optical methods, etc., and can solve problems such as long time

Inactive Publication Date: 2005-03-30
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the recording film used in DVD-RW, etc., crystallizes in a short time, and the recording film used in DVD-RAM takes a long time

Method used

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  • Mfg.method of element and observing method thereof
  • Mfg.method of element and observing method thereof
  • Mfg.method of element and observing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] A ROM substrate of an optical disc was produced by the method described above.

[0051] make Figure 5A The structure of the medium, tried to record the amorphous mark on the medium incident laser light. On the glass substrate, the film on 501 was formed entirely by sputtering. Protective film is SiO 2 , in order to improve the SiO 2 503 and the adhesiveness of the recording film 505, while setting ZnO·SiO 2 . In addition, A502 is a heat dissipation layer for heat generated in the recording film by irradiation with laser light. The medium was heated in an oven at 300°C for 3 minutes to bring the recording film 505 into a crystalline state. In this state, through an objective lens with a numerical aperture of 0.9, from Figure 5A Laser light with a wavelength of 400 nm is incident on the medium above, and the light is focused on the recording film of the medium to locally melt the recording film and record an amorphous mark. The window width Tw reaches 74.5nm, an...

Embodiment 2

[0057] Using this technique, try to make fine line patterns with laser light.

[0058] production Figure 7A A sample of the structure shown. Put the sample into the furnace and anneal at a temperature of 300°C for 2 minutes to crystallize the recording film and form an image. Figure 7B . An ArF laser beam with a wavelength of 193 nm was condensed on the sample by an NA 0.8 objective lens, and the recording film 704 was melted while scanning the spot to form an amorphous line and space (L&S) pattern 705 with a width of 50 nm. The laser power is specified as 0.5mW, and the scanning speed is specified as 1m / s. exist Figure 7C In , it represents the cross-sectional view of the sample after patterning, in Figure 7D , representing the top view. Next, in the vertical direction of the parallel pattern, in the same manner as the pattern 705, such as Figure 7E A recorded amorphous pattern 706 is shown. At this time, the periphery of the pattern 706 is recrystallized. There...

Embodiment 3

[0064] Here, patterning using electron beams was attempted.

[0065] A medium having the structure shown in Fig. 8A was made. A recording film 802 and a Si film 803 are formed into films on a Si substrate 801 using sputtering. A protective film is formed on Si, and conductivity is necessary in order for electron beams to reach the recording film. In addition, Ge is used here as the recording film 2 Sb 2 Te 5 .

[0066] By irradiating laser light, only half of the recording film of this sample was crystallized as shown in FIG. 8B . As a result, the recording film of the sample was divided into two crystalline regions 804 and amorphous regions 805 .

[0067] From the upper part of the figure, the recording film is irradiated with an electron beam connecting a focal point, and a pattern is formed by Joule heat generated by an electric current passing through the recording film. In the crystallization region 804, make the accelerating voltage of the electron beam reach 25kV...

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Abstract

In fabricating process using a light beam or electron beam, reactivity is determined by the total amounts of photons or electrons absorbed by resist and consequently, fine fabrication cannot be achieved. On the other hand, thermal recording has been proposed but in the thermal recording, miniaturization of the fabrication size depends on a spot size of light beam or electron beam used for recording and is limited. Under the circumstance, to ensure a fine uneven pattern to be produced with high reproducibility, only crystal of a recording film used in a phase-change optical disk is peeled off by using an alkaline solution or pure water to leave only an amorphous portion on the sample surface and as a result, crystalline and amorphous patterns are converted into an uneven pattern.

Description

technical field [0001] The present invention relates to a method for microfabrication and observation of atomic / molecular arrangement of a sample. Background technique [0002] Processing on semiconductors, etc., is to apply a resist whose reactivity changes by irradiation of laser light or electron beam (EB) on the substrate, develop after laser light or EB irradiation, and remove the irradiated Partial or unirradiated parts to make concave-convex patterns. In this case, the laser light or EB uses a condensing optical system, for example, in laser light, using the wavelength λ and the numerical aperture NA of the objective lens, the spot diameter of the condensed light can be written as λ / NA. Therefore, attempts are being made to create fine patterns by making λ small, making NA large, and making the spot diameter small. Currently under development is a processing technology using an ArF laser. The wavelength of the ArF laser is 193nm. With this light source, the line wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G11B7/0045G11B7/24G11B7/243G11B7/2433G11B7/26H01L21/00H01L21/66
CPCG11B7/00456G11B7/00454G11B7/261
Inventor 新谷俊通安斋由美子峰邑浩行宫本治一
Owner HITACHI LTD
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