Immersion lithographic system and method of manufacturing semiconductor device
An immersion lithography and semiconductor technology, applied in the field of immersion lithography technology system, can solve the problems of reducing manufacturing accuracy and increasing the thickness of photoresist, and achieve the effect of improving accuracy and yield
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[0065] The following are preferred embodiments of the present invention to illustrate the immersion photolithography system and its usage method of the present invention.
[0066] figure 1 is a schematic diagram of an immersion lithography system 10 . The immersion lithography system 10 includes an image light source 20, which emits a beam of light energy 21, which passes through a lens 22, a mask 30, an optical element module 40, and an outermost lens having an optical surface 51 in sequence. 50. In a preferred embodiment, lens 50 is formed of silicon oxide (or other silicon and oxygen containing material), fused silica, or calcium fluoride. In another preferred embodiment, the wavelength of the image light source 20 is preferably below 450 nm, especially less than or equal to 193 nm, such as 157 nm or 193 nm.
[0067] In the immersion lithography system 10 , the space between the outermost lens 50 and the semiconductor substrate 80 is filled with the immersion fluid 60 . ...
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