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Immersion lithographic system and method of manufacturing semiconductor device

An immersion lithography and semiconductor technology, applied in the field of immersion lithography technology system, can solve the problems of reducing manufacturing accuracy and increasing the thickness of photoresist, and achieve the effect of improving accuracy and yield

Active Publication Date: 2005-06-08
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology

However, conventional immersion fluids can react with or further decompose photoresist materials
[0020] Additionally, in some conventional immersion lithography techniques, some immersion fluid, such as water, penetrates the photoresist being immersed, causing immersion in the The photoresist material in the immersion fluid expands and increases the thickness of the photoresist, reducing the accuracy of subsequent manufacturing

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  • Immersion lithographic system and method of manufacturing semiconductor device
  • Immersion lithographic system and method of manufacturing semiconductor device
  • Immersion lithographic system and method of manufacturing semiconductor device

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Embodiment Construction

[0065] The following are preferred embodiments of the present invention to illustrate the immersion photolithography system and its usage method of the present invention.

[0066] figure 1 is a schematic diagram of an immersion lithography system 10 . The immersion lithography system 10 includes an image light source 20, which emits a beam of light energy 21, which passes through a lens 22, a mask 30, an optical element module 40, and an outermost lens having an optical surface 51 in sequence. 50. In a preferred embodiment, lens 50 is formed of silicon oxide (or other silicon and oxygen containing material), fused silica, or calcium fluoride. In another preferred embodiment, the wavelength of the image light source 20 is preferably below 450 nm, especially less than or equal to 193 nm, such as 157 nm or 193 nm.

[0067] In the immersion lithography system 10 , the space between the outermost lens 50 and the semiconductor substrate 80 is filled with the immersion fluid 60 . ...

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Abstract

The invention provides an immersion photolithography system, a method for illuminating a semiconductor structure covered with a photosensitive material layer on the upper surface, and a method for manufacturing a semiconductor element. The lithography system consists of an optical surface, a layer of immersion fluid in contact with a portion of the optical surface, and a semiconductor structure with a layer of photosensitive material on the upper surface. Wherein, the thickness of the photosensitive material layer is not greater than 5000, and part of its surface is in contact with the immersion fluid. The method for illuminating a semiconductor structure comprises the following steps: first injecting an immersion fluid between an optical element and a photosensitive material layer, and then directly irradiating light through the immersion fluid onto the photosensitive material layer, wherein the wavelength of the light is preferably less than 450 nanometers . While improving the resolution of the photolithography system, the invention avoids the immersion fluid from decomposing the photosensitive material, limits the expansion of the photosensitive material layer, and thus improves the accuracy and yield of the subsequent manufacturing process.

Description

technical field [0001] The invention relates to a system and method for manufacturing semiconductor elements, in particular to an immersion photolithography system for introducing immersion fluid between an optical lens and a substrate. Background technique [0002] In the yellow light lithography system, in order to resolve high-resolution patterns such as dots, lines or images, the yellow light lithography must have high resolution. In photolithography systems used in the integrated circuit (IC) industry, an image light source is projected onto a layer of photoresist to draw a circuit diagram of an electronic unit. Although yellow light lithography has been used in the IC industry for decades, the industry still hopes to use it for fabrication below 50nm. Therefore, how to greatly improve the resolution of the yellow light lithography manufacturing technology has become one of the most important issues facing the production of high-density, high-efficiency semiconductor I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/00H01L21/027
Inventor 杨育佳胡正明
Owner TAIWAN SEMICON MFG CO LTD
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