Device for pulling monocrystals

A single crystal and heater technology, applied in the direction of single crystal growth, single crystal growth, post-processing equipment, etc., to achieve the effects of improving uniformity, reducing carbon pollution, and extending service life

Inactive Publication Date: 2005-08-17
弗拉基米尔・弗拉基米罗维奇・科斯京 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional heaters with grooves are still used here and thus still suffer from the aforementioned drawbacks

Method used

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  • Device for pulling monocrystals
  • Device for pulling monocrystals
  • Device for pulling monocrystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The process is carried out in a vacuum chamber 1 . use as figure 1 The device shown consists of a carbon containing 3 x 10 15 cm -3 And oxygen 2×10 16 cm -3 A boron-doped silicon single crystal with a diameter of 150mm was grown from polycrystalline silicon. In subsequent examples, the same material was used. A quartz crucible 2 with an outer diameter of 356 mm in a support 3 installed on a pole 4 is used, and 30 kg of polysilicon is loaded in the crucible.

[0049] The heater 5 was made by braiding carbon fibers into a cylinder with a thickness of 0.6 mm (0.0006 m) using graphite as a mandrel. Fix the end of the cylinder through the flange to form a horizontal plane, and clamp it with contact rings 6, 7, 8, 9. A thin layer of silicon nitride is coated on the inner surface of the cylinder in heater 5 (after removal of the mandrel). The operation method of coating this layer is by SiCl at 1300°C 4 -NH 3 -H 2 Formed by precipitation of the gas mixture, the cons...

Embodiment 2

[0057] use as figure 2 The setup shown pulls a single crystal. Containing carbon 3×10 15 cm -3 A boron-doped silicon single crystal with a diameter of 150mm was grown from polycrystalline silicon. A quartz crucible with an outer diameter of 356 mm is used, and the feeding amount is 30 kg. The housings 10 , 11 are made of graphite and are electrically insulated from the vacuum chamber 1 . The heater 5 is made by winding two layers of "Ural" type carbon fabric on a graphite mandrel. Then, the upper end face of the cylindrical heater is cut into a petal shape, clamped between two rings 7 and 8 made of carbon material (the length of the petal is equal to the width of the rings 7 and 8), and the lower end face is placed on the ring 6 and 9 are clamped. Vertical seams are stitched with carbon fiber. After removal of the mandrel, the heater and insulated housing / wires were sealed with pyrolytic graphite using known procedures at a temperature of 1050°C, a pressure of 28 mmHg,...

Embodiment 3

[0065] When growing a silicon single crystal with a diameter of 150 mm from a polysilicon charge with a mass of 30 kg, crucible 2 and holder 3 with an outer diameter of 370 mm and made of silicon nitride integrated with each other can be used. The device consists of a side housing / wire 10 ( image 3 ), the upper part is connected with a ring 8 made of graphite, and the bottom part is connected with an electric wire 13. Wires 12 are connected to a pair of graphite rings 6 and 9 at the bottom. The bottom housing 11 is not connected to an electric circuit, and is installed at the bottom of the vacuum chamber 1 . The canister heater 5 is made of thermally expanded rolled graphite. The wall thickness of the heater is 2mm (0.002m). Cut the end face of the cylinder into a petal shape and bend it, and clamp and fix it with rings 7, 8 and 6, 9 respectively. A thin layer of silicon nitride is coated on the inner and outer surfaces of the heater. The housing 10 and struts 4 are made...

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Abstract

The device comprises a crucible with a support, a heater and at least one heat-insulating screen, wherein, according to the invention, the heater is made of a starting flexible carbon-bearing material in the form of a cylinder whose ends are fixed between coaxially arranged rigid rings of carbon material that are connected to a power supply. And, the heater is made so that the wall thereof has its thickness determined from the relationship: delta . rho - c = 500 to 8500 J / m<2>. K, where: <> delta - heater wall thickness, m; rho - density of the material the heater is made of, kg / m<3>; and c - specific heat of the material the heater is made of (at working temperature), J / kg.K.

Description

technical field [0001] The invention relates to the field of semiconductor metallurgy and can be used to grow silicon, germanium and A III B V single crystals of group compounds. technical background [0002] The device for growing single crystal in the prior art includes a melting crucible mounted on a support, a heater with wires and a heat insulation system surrounding it, wherein the support, heater and heat insulation system are made of carbon materials. [Russian Patent No. 2081948, C30B15 / 14, published June 20, 1997; and Russian Patent No. 2097451, C30B15 / 14, published November 27, 1997]. [0003] In the process of pulling a single crystal using these devices, a heater with vertical grooves is used. The heater has a large mass, which increases heat loss and causes severe hysteresis effects in heating and cooling, which in turn affect process control. The grooves in the heater and the inhomogeneous current flow through the different cross-sections disturb the unifor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/10C30B15/14C30B35/00
CPCC30B29/06C30B35/00C30B15/14Y10T117/1032
Inventor 弗拉基米尔·弗拉基米罗维奇·科斯京
Owner 弗拉基米尔・弗拉基米罗维奇・科斯京
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