Device for pulling monocrystals
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 弗拉基米尔・弗拉基米罗维奇・科斯京
- Publication Date
- 2005-08-17
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor metallurgy and can be used to grow silicon, germanium and A III B V single crystals of group compounds. technical background
[0002] The device for growing single crystal in the prior art includes a melting crucible mounted on a support, a heater with wires and a heat insulation system surrounding it, wherein the support, heater and heat insulation system are made of carbon materials. [Russian Patent No. 2081948, C30B15 / 14, published June 20, 1997; and Russian Patent No. 2097451, C30B15 / 14, published November 27, 1997].
[0003] In the process of pulling a single crystal using these devices, a heater with vertical grooves is used. The heater has a large mass, which increases heat loss and causes severe hysteresis effects in heating and cooling, which in turn affect process control. The grooves in the heater and the inhomogeneous current flow through the different cross-sections disturb the unifor...