Unlock instant, AI-driven research and patent intelligence for your innovation.

Multi-sectional-distribution feedback semiconductor laser

A distributed feedback and laser technology, which is applied to semiconductor lasers, lasers, laser components, etc., can solve the problems of low yield, high cost, and inability to fine-tune repairs, etc., and achieve high yield and low cost.

Inactive Publication Date: 2005-12-21
TSINGHUA UNIV
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quality of the grating structure is a crucial determinant of device performance. Once the grating parameters deviate during the production process, fine-tuning and repairing cannot be performed.
In addition, the relatively simple and low-cost holographic exposure method cannot be used to fabricate non-uniform gratings, but electron beam exposure or other complex fabrication processes are required.
Therefore, there are problems of high cost, low yield and complex production method.
These shortcomings will directly affect the practicality of multi-segment DFB lasers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-sectional-distribution feedback semiconductor laser
  • Multi-sectional-distribution feedback semiconductor laser
  • Multi-sectional-distribution feedback semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] [Example 1] InGaAsP / InP variable waveguide width multi-segment DFB laser with operating wavelength in the 1550nm band.

[0026] The epitaxial material of the device is described below. First, an epitaxial, n-type InP buffer layer (thickness 200nm, doping concentration about 1×10 18 cm -2 ), 100nm thick undoped lattice matching InGaAsP waveguide layer (optical fluorescence wavelength 1.2 microns), strained InGaAsP multiple quantum wells (optical fluorescence wavelength 1.52 microns, 7 quantum wells: well width 8nm, 0.5% compressive strain, barrier width 10nm , lattice matching material, optical fluorescence wavelength 1.2 microns), 70nm thick InGaAsP grating material layer. Next, the grating structure is fabricated by the method of holographic interference exposure. Then secondary epitaxy 100nm thick p-type lattice matched InGaAsP waveguide layer (optical fluorescence wavelength 1.2 μm, doping concentration about 1×10 17 cm -2 ), 1.7 μm thick P-type InP confinement ...

Embodiment 2

[0029] [Example 2] A variable waveguide width multi-segment DFB laser with a working wavelength in the 1550nm band introduced into the phase modulation segment.

[0030] The epitaxial material of the device is described below. First, an n-type InP buffer layer (thickness 200nm, doping concentration about 1×10) is epitaxially on the n-type substrate material 18 cm -2 ), 100nm thick undoped lattice matching InGaAsP waveguide layer (optical fluorescence wavelength 1.2 microns), strained InGaAsP multiple quantum wells (optical fluorescence wavelength 1.52 microns, 7 quantum wells: well width 8nm, 0.5% compressive strain, barrier width 10nm , lattice matching material, optical fluorescence wavelength 1.2 microns), 70nm thick InGaAsP grating material layer. Next, the grating structure is fabricated by holographic interference exposure, and the grating in the phase adjustment section area and the quantum well layer below are removed by photolithography and wet etching. Then the se...

Embodiment 3

[0033] [Example 3] A variable waveguide width multi-segment DFB laser with a phase modulation segment based on a side-coupling grating with a working wavelength in the 1550 nm band.

[0034] The epitaxial material of the device is formed on the n-type substrate material by one epitaxy, including the n-type InP buffer layer (thickness 200nm, doping concentration about 1×10 18 cm -2 ), 100nm thick undoped lattice matching InGaAsP waveguide layer (optical fluorescence wavelength 1.2 microns), strained InGaAsP multiple quantum wells (optical fluorescence wavelength 1.52 microns, 7 quantum wells: well width 8nm, 0.5% compressive strain, barrier width 10nm , lattice matching material, optical fluorescence wavelength 1.2 μm), 100nm thick p-type lattice matching InGaAsP waveguide layer (optical fluorescence wavelength 1.2 μm, doping concentration about 1×10 17 cm -2 ), 1.7 μm thick P-type InP confinement layer (doping concentration from 3×10 17 cm -2 Gradually change to 1×10 18 c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

Characters of the invention are that wave-guide width in at least one DFB sect in multiple DFB sects is different from width in other sects. Wavelength of DFB laser is correlative to cycle of grating and equivalent refractive index. Different wave-guide widths are adopted for different DFB sects so as to obtain difference of equivalent refractive index. Therefore, difference of laser wavelength is realized. Corresponding laser spectrum generates minor difference (in 0.0lnm level) so as to reach effect of wavelength shift. The invention can be applicable to repair grating structure to play role of optimizing performance of device. Advantages are: novel structure, simple preparation technique. The invention possesses wide application prospects in future high-speed communication area.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to the technical field of semiconductor lasers. Background technique [0002] The invention is a laser device capable of generating high-speed laser pulses, and its application range is very wide, including optical fiber communication backbone network, wireless local area network and the like. The following first introduces the application of the device in optical clock recovery, and then briefly introduces the return-to-zero code (RZ) light source and high-frequency microwave source composed of its core components. [0003] Modern society is in an information age. The emergence of the Internet (Internet), known as the "information superhighway", marks the transition of communication technology from traditional voice services to comprehensive data services. This shift has brought the need for larger transmission capacity and faster transmission rates. Optical fiber...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/00
Inventor 罗毅万钦孙长征熊兵王健
Owner TSINGHUA UNIV